STT3520C
Elektronische Bauelemente
N-Ch: 3.7 A, 23 V, R
DS(ON)
58 m
P-Ch: -2.7 A, -23 V, R
DS(ON)
112 m
N & P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density
process. Low R
DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in power management
circuitry. Typical applications are DC-DC converters, power
management in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular and cordless
telephones.
A
E
TSOP-6
L
B
FEATURES
F
DG
K
C
H
J
Low R
DS(on)
Provides Higher Efficiency And Extends
Battery Life.
Miniature TSOP-6 Surface Mount Package Saves
Board Space.
REF.
PACKAGE INFORMATION
Package
TSOP-6
MPQ
3K
LeaderSize
7’ inch
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
ABSOLUTE MAXIMUM RATINGS(T
A
=25
℃
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
I
S
P
D
@T
A
=25℃
P
D
@T
A
=70℃
Tj, Tstg
Ratings
N-Channel
P-Channel
Unit
V
V
A
A
A
W
℃
23
±12
3.7
2.9
8
1.05
-23
±12
-2.7
-2.1
-8
-1.05
1.15
0.7
-55 ~ +150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev. A
Page 1 of 7
STT3520C
Elektronische Bauelemente
N-Ch: 3.7 A, 23 V, R
DS(ON)
58 m
P-Ch: -2.7 A, -23 V, R
DS(ON)
112 m
N & P-Channel Enhancement Mode Mos.FET
Parameter
Maximum Junction to Ambient
1
Notes
1
2
THERMAL RESISTANCE RATINGS
N-Channel
Symbol
Typ
Max
93
110
t
≦
10 sec
R
JA
Steady State
130
150
P-Channel
Typ
Max
93
110
130
150
Unit
℃
/W
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Zero Gate Voltage Drain
Current
P-Ch
N-Ch
P-Ch
On-State Drain Current
1
N-Ch
P-Ch
N-Ch
P-Ch
Drain-Source
On-Resistance
1
N-Ch
P-Ch
N-Ch
P-Ch
Forward Transconductance
1
Diode Forward Voltage
1
N-Ch
P-Ch
N-Ch
P-Ch
g
fs
V
SD
R
DS(ON)
I
D(on)
I
DSS
Symbol Min.
V
GS(th)
I
GSS
1
-1
-
-
-
-
-
-
5
-5
-
-
-
-
-
-
-
-
-
-
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
5
0.80
-0.83
-
-
100
-100
1
-1
10
-10
-
-
58
112
82
172
160
210
-
-
-
-
Unit
V
Test Conditions
V
DS
=V
GS
, I
D
=250uA
V
DS
=V
GS
, I
D
= -250uA
V
DS
= 0 V, V
GS
= 12 V
V
DS
= 0 V, V
GS
= -12 V
V
DS
=16 V, V
GS
=0 V
V
DS
=-16V, V
GS
=0 V
V
DS
=16V, V
GS
=0 V, T
J
=55℃
V
DS
= -16V, V
GS
=0 V, T
J
=55℃
Gate-Body Leakage Current
uA
uA
A
V
DS
= 5V, V
GS
=4.5 V
V
DS
= -5V, V
GS
= -4.5 V
V
GS
=4.5V, I
D
= 3.7A
V
GS
=-4.5V, I
D
= 3.1A
V
GS
=2.5V, I
D
= 2.7A
V
GS
=-2.5V, I
D
= -2.2A
V
GS
=1.8V, I
D
= 2.2A
V
GS
=-1.8V, I
D
= -2.0A
V
DS
= 5V, I
D
= 3.7A
V
DS
= -5V, I
D
= 3.1A
I
S
= 1.05A, V
GS
= 0V
I
S
= -1.05A, V
GS
= 0V
mΩ
S
S
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev. A
Page 2 of 7
STT3520C
Elektronische Bauelemente
N-Ch: 3.7 A, 23 V, R
DS(ON)
58 m
P-Ch: -2.7 A, -23 V, R
DS(ON)
112 m
N & P-Channel Enhancement Mode Mos.FET
DYNAMIC
2
Total Gate Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7.5
3.8
0.6
0.6
1.0
1.5
5
5
12
15
13
20
7
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nS
P-Channel
V
DD
= -15V, R
GEN
= 15Ω
V
GS
= -4.5V, I
D
= -1A
N-Channel
V
DD
= 15V, R
GEN
= 15Ω,
V
GS
= 4.5V, I
D
= 1A
nC
P-Channel
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -3.1A
N-Channel
V
DS
=15V, V
GS
= 4.5V,
I
D
= 2.7A
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Notes
1
2
Pulse test：PW
≦
300 us duty cycle
≦
2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev. A
Page 3 of 7
STT3520C
Elektronische Bauelemente
N-Ch: 3.7 A, 23 V, R
DS(ON)
58 m
P-Ch: -2.7 A, -23 V, R
DS(ON)
112 m
N & P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev. A
Page 4 of 7
STT3520C
Elektronische Bauelemente
N-Ch: 3.7 A, 23 V, R
DS(ON)
58 m
P-Ch: -2.7 A, -23 V, R
DS(ON)
112 m
N & P-Channel Enhancement Mode Mos.FET
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev. A
Page 5 of 7
