®
STTA2006P/PI
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
t
rr
(typ)
V
F
(max)
20A
600V
30ns
1.5V
K
FEATURES AND BENEFITS
s
s
s
s
s
SPECIFIC TO “FREEWHEEL MODE” OPERA-
TIONS: FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST AND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
INSULATED PACKAGE : DOP3I
Electrical insulation : 2500V
RMS
Capacitance < 12 pF
A
K
SOD93
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all “freewheel mode” operations
ABSOLUTE RATINGS
(limiting values)
O
so
b
V
RRM
V
RSM
I
FRM
I
FSM
T
j
T
stg
I
F(RMS)
Symbol
te
le
r
P
uc
od
s)
t(
so
b
-O
STTA2006P
et
l
P
e
od
r
s)
t(
uc
K
A
Isolated
DOP3I
STTA2006PI
and is particularly suitable and efficient in Motor
control freewheel applications and in booster
diode applications in power factor control
circuitries.
Packaged either in SOD93 or in DOP3I, these
Parameter
Value
600
600
50
tp = 5
µs
F = 5kHz square
tp=10 ms sinusoidal
270
180
150
-65 to 150
Unit
V
V
A
A
A
°C
°C
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Maximum operating junction temperature
Storage temperature range
TM : TURBOSWITCH is a trademark of STMicroelectronics
May 2002 - Ed: 4D
1/8
STTA2006P/PI
THERMAL AND POWER DATA
Symbol
R
th(j-c)
P
1
P
max
Parameter
Junction to case thermal
resistance
Conduction power dissipation
I
F(AV)
= 20A
δ
=0.5
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Test conditions
SOD93
DOP3I
SOD93
DOP3I
SOD93
DOP3I
Tc= 96°C
Tc= 74°C
Tc= 90°C
Tc= 66°C
Value
1.5
2.1
36
40
Unit
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
F
I
R
*
Parameter
Forward voltage drop
Reverse leakage current
Threshold voltage
Dynamic resistance
* tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
Test conditions
I
F
=20A
V
R
=0.8 x
V
RRM
Ip < 3.I
AV
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Min
Typ
1.25
2.5
Max
1.75
1.5
100
6
Unit
V
V
µA
mA
V
**
V
to
rd
Test pulse :
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
t
rr
Parameter
Reverse recovery
time
Maximum reverse
recovery current
I
RM
S factor
b
O
so
t
fr
te
le
r
P
uc
od
Tj = 25°C
I
F
= 0.5 A
I
R
= 1A
Irr = 0.25A
I
F
= 1A dI
F
/dt =-50A/µs V
R
=30V
I
F
=20A
s)
t(
Test conditions
so
b
-O
te
le
r
P
od
s)
t(
uc
1.15
17
mΩ
Min
Typ
30
Max
Unit
ns
60
A
12.5
17.5
Tj = 125°C VR = 400V
dI
F
/dt = -160 A/µs
dI
F
/dt = -500 A/µs
Softness factor
Tj = 125°C V
R
= 400V
dI
F
/dt = -500 A/µs
I
F
=20A
0.42
/
TURN-ON SWITCHING
Symbol
Parameter
Forward recovery
time
Test conditions
Tj = 25°C
I
F
= 20A, dI
F
/dt = 160 A/µs
measured at, 1.1
×
V
F
max
Min
Typ
Max
600
V
12
Unit
ns
V
Fp
Peak forward voltage Tj = 25°C
I
F
=20A, dI
F
/dt = 160 A/µs
2/8
STTA2006P/PI
Fig. 1:
Conduction losses versus average current.
P1(W)
50
Fig. 2:
Forward voltage drop versus forward
current.
VFM(V)
3.50
T
MAXIMUM VALUES
3.00
40
30
20
=0.5
=0.1
=0.2
2.50
=tp/T
tp
Tj=125
o
C
2.00
=1
1.50
1.00
0.50
10
0
0
IF(av)(A)
2
4
6
8
10
12
14
16
18
20
IFM(A)
0.00
0.1
1
10
100
200
Fig. 3:
Relative variation of thermal transient
impedance junction to case versus pulse duration.
Fig. 4:
Peak reverse recovery current versus
dI
F
/dt.
IRM(A)
40.0
37.5
90% CONFIDENCE Tj=125
o
C
35.0
VR=400V
32.5
IF=40A
30.0
27.5
25.0
22.5
IF=20A
20.0
17.5
15.0
IF=10A
12.5
10.0
7.5
5.0
2.5
dIF/dt(A/ s)
0.0
0 100 200 300 400 500 600 700 800 900 1000
Fig. 5:
Reverse recovery time versus dI
F
/dt.
trr(ns)
250
225
200
175
150
125
100
75
50
25
0
0
IF=10A
b
O
so
te
le
IF=40A
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Fig. 6:
Softness factor (tb/ta) versus dI
F
/dt.
S factor
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Typical values Tj=125
o
C
IF<2xIF(av)
90% CONFIDENCE Tj=125
o
C
VR=400V
VR=400V
IF=20A
dIF/dt(A/ s)
dIF/dt(A/ s)
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
3/8
STTA2006P/PI
Fig. 7:
Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
2.50
2.25
2.00
S factor
Fig. 9:
Transient peak forward voltage versus
dI
F
/dt.
VFP(V)
16
15
90% CONFIDENCE Tj=125
o
C
14
IF=IF(av)
13
12
11
10
9
8
7
6
5
4
3
2
1
dIF/dt(A/ s)
0
0
50 100 150 200 250
1.75
1.50
1.25
1.00
IRM
0.75
Tj(oC)
0.50
0
25
50
75
100
125
150
300
350
400
Fig. 9:
Forward recovery time versus dI
F
/dt.
tfr(ns)
600
90% CONFIDENCE Tj=125
o
C
550
VFr=1.1*VF max.
500
IF=IF(av)
450
400
350
300
250
200
150
100
50
dIF/dt(A/ s)
0
0 50 100 150 200 250 300 350 400 450 500
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
4/8
STTA2006P/PI
APPLICATION DATA
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
“FREEWHEEL
Mode”
application
(Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
due to the diode
Fig. A :
“FREEWHEEL” MODE.
SWITCHING
TRANSISTOR
O
so
VR
b
te
le
r
P
uc
od
t
T
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
DIODE:
TURBOSWITCH
IL
F = 1/T
= t/T
LOAD
5/8
MEMS传感器
