®
STTA3006CW/CP
TURBOSWITCH
™
ULTRA-FAST HIGH VOLTAGE DIODES
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
t
rr
(typ)
V
F
(max)
2 x 15A
600V
A2
A1
K
35ns
1.6V
FEATURES AND BENEFITS
SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST AND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
)-
(s
so
b
ct
u
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P
t(
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DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
V
RSM
I
FRM
I
FSM
T
j
T
stg
Parameter
Repetitive peak reverse voltage
RMS forward current
Non repetitive peak reverse voltage
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
I
F(RMS)
Maximum operating junction temperature
TM : TURBOSWITCH is a trademark of STMicroelectronics
b
O
so
te
le
A1
ro
P
K
uc
d
s)
t(
A2
TO-247
STTA3006CW
te
le
r
P
A2
od
s)
t(
uc
K
A1
SOT93
STTA3006CP
control freewheel applications and in booster diode
applications in power factor control circuitries.
Packaged either in TO-247 or SOT93, these 600V
devices are particularly intended for use on 240V
domestic mains.
Value
600
600
30
200
230
150
-65 to 150
Unit
V
V
A
A
A
°C
°C
tp = 5
µs
F = 5kHz square
tp=10 ms sinusoidal
November 1999 Ed : 4B
1/8
STTA3006CW/CP
THERMAL AND POWER DATA
Symbol
R
th(j-c)
Parameter
Junction to case
Test conditions
Per diode
Total
Coupling
Per diode
I
F(AV)
= 30A
δ
=0.5
Tc= 110°C
Per diode
Tc=105°C
Value
1.9
1.0
0.1
20.5
Unit
°C/W
P
1
Conduction power dissipation
W
P
max
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
22.5
W
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
V
F *
I
R
**
Parameter
Forward voltage drop
Reverse leakage current
Threshold voltage
Dynamic resistance
Test conditions
I
F
=15A
V
R
=0.8 x
V
RRM
Ip < 3.I
AV
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Min
Typ
V
to
rd
Test pulse :
-
et
l
)
(s
so
b
ct
u
d
-O
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s)
P
t(
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od
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DYNAMIC ELECTRICAL CHARACTERISTICS
(per diode)
TURN-OFF SWITCHING
Symbol
t
rr
Parameter
Test conditions
Reverse
recovery time
I
RM
Tj = 125°C V
R
= 400V
Maximum
reverse recovery dI
F
/dt = -120 A/µs
current
dI
F
/dt = -500 A/µs
Softness factor
Tj = 125°C V
R
= 400V
dI
F
/dt = -500 A/µs
I
F
= 15A
S factor
I
F
= 15A
TURN-ON SWITCHING
Symbol
t
fr
Parameter
Forward
recovery time
Peak forward
voltage
Test conditions
Tj = 25°C
I
F
= 15A, dI
F
/dt = 120 A/µs
measured at, 1.1
×
V
F
max
Tj = 25°C
I
F
= 15A, dI
F
/dt = 120 A/µs
V
Fp
* tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
To evaluate the maximum conduction losses use the following equation :
P = V
to
x I
F(AV)
+ rd x I
F2(RMS)
b
O
so
te
le
r
P
d
o
1.3
2
uc
Max
1.8
1.6
s)
t(
V
V
V
Unit
P
e
Min
od
r
s)
t(
uc
100
5
1.06
177
µA
mA
mΩ
Typ
35
Max
Unit
ns
Tj = 25°C
I
F
= 0.5 A I
R
= 1A
Irr = 0.25A
I
F
= 1A dI
F
/dt =-50A/µs V
R
= 30V
65
A
12.5
17.5
/
0.5
Min
Typ
Max
500
Unit
ns
V
9
2/8
STTA3006CW/CP
Fig. 1:
Conduction losses versus average current.
Fig. 2:
Forward voltage drop versus forward
current (maximum values).
VFM(V)
δ
= 0.1
δ
= 0.2
δ
= 0.5
P1(W)
25
20
δ
=1
200
100
Tj=125°C
15
10
T
10
5
IF(av) (A)
0
0
2
4
6
8
10
12
δ
=tp/T
tp
IFM(A)
14
16
18
1
0.0
0.5
1.0
1.5
2.0
Fig. 3:
Relative variation of thermal transient
impedance junction to case versus pulse duration.
K
1.0
K=
Zth(j-c) (tp,
δ
)
Rth(j-c)
Fig. 4:
Peak reverse recovery current versus
dIF/dt (90% confidence).
)-
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
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P
b
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te
le
so
b
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0.8
0.6
0.4
0.2
35
30
25
20
15
10
δ
= 0.5
δ
= 0.2
b
O
45
40
5
0
0
IRM(A)
so
te
le
ro
P
uc
d
2.5
3.0
s)
t(
3.5
4.0
VR=400V
Tj
=125°
C
et
l
P
e
400
od
r
s)
t(
uc
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
T
δ
= 0.1
Single pulse
tp(s)
δ
=tp/T
tp
dIF/dt(A/µs)
300
500
600
700
800
900 1000
0.0
1E-4
1E-3
1E-2
1E-1
1E+0
100
200
Fig. 5:
Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
Fig. 6:
Softness factor (tb/ta) versus dIF/dt (typical
values).
S factor
200
180
160
140
120
100
80
60
40
20
0
VR=400V
Tj=125°C
1.0
0.8
0.6
0.4
IF=2*IF(av)
IF<2*IF(av)
VR=400V
Tj=125°C
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
0
100
200
300
400
500
600
700
800
900 1000
0.2
dIF/dt(A/µs)
0.0
0
100
200
300
400
500
600
700
800
900 1000
3/8
STTA3006CW/CP
Fig. 7:
Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
Fig. 8:
Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
25
Tj=125°C
1.1
1.0
S factor
20
IF=IF(av)
0.9
IRM
15
10
5
0.8
Tj(°C)
0.7
25
50
75
100
125
0
0
100
200
300
dIF/dt(A/µs)
400
500
600
Fig. 9:
Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
300
250
200
150
100
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
-
et
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)
(s
so
b
ct
u
d
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s)
P
t(
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od
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P
b
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dIF/dt(A/µs)
500
50
0
100
200
300
400
600
700
800
900 1000
b
O
so
te
le
r
P
d
o
uc
700
800
s)
t(
900 1000
P
e
od
r
s)
t(
uc
4/8
STTA3006CW/CP
APPLICATION DATA
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL
Mode"
application
(Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
SWITCHING
LOSSES
in the diode
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
VR
b
O
Fig. A :
"FREEWHEEL" MODE.
b
O
so
te
le
ro
P
uc
d
s)
t(
SWITCHING
LOSSES
in the tansistor
P
e
od
r
s)
t(
uc
SWITCHING
TRANSISTOR
DIODE:
TURBOSWITCH
IL
t
T
F = 1/T
= t/T
LOAD
5/8
