STTH1202
Ultrafast recovery diode
Main product characteristics
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
t
rr
(typ)
12 A
200 V
175° C
0.82 V
18 ns
A
K
K
Features and benefits
■
■
■
■
■
A
K
TO-220AC
STTH1202D
A
K
TO-220FPAC
STTH1202FP
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery time
High junction temperature
Insulated packages
– TO-220FPAC
Electrical insulation 1500 V
RMS
– TO-220AC Ins
Electrical insulation 2500 V
RMS
A
K
TO-220AC Ins
STTH1202DI
Description
The STTH1202 uses ST's new 200V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, and
TO-220AC Ins, this device is intended for use in
low voltage, high frequency inverters, free
wheeling and polarity protection.
Order codes
Part Number
STTH1202D
STTH1202FP
STTH1202DI
Marking
STTH1202
STTH1202
STTH1202DI
March 2007
Rev 1
1/10
www.st.com
Characteristics
STTH1202
1
Table 1.
Symbol
V
RRM
V
RSM
I
F(RMS)
Characteristics
Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
TO-220AC
I
F(AV)
Average forward current,
δ
= 0.5
TO-220AC Ins
TO-220FPAC
I
FRM
I
FSM
T
stg
T
j
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
T
c
= 140° C
T
c
= 130° C
T
c
= 105° C
130
100
-65 to + 175
175
A
A
°C
°C
12
A
Value
200
V
200
30
A
Unit
t
p
= 10 µs F = 5 kHz square
t
p
= 10 ms Sinusoidal
Table 2.
Thermal parameters
Parameter
TO-220AC
Value
2.5
3
5
° C/W
Unit
Symbol
R
th(j-c)
Junction to case
TO-220AC Ins
TO-220FPAC
Table 3.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25° C
T
j
= 125° C
T
j
= 25° C
T
j
= 150° C
V
R
= V
RRM
Min.
Typ
Max.
10
µA
10
1.0
I
F
= 12 A
0.82
100
1.10
0.95
1.15
I
F
= 15 A
0.91
0.87
1.05
1.0
V
Unit
V
F(2)
Forward voltage drop
T
j
= 25° C
T
j
= 125° C
T
j
= 150° C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 0.77 x I
F(AV)
+ 0.015 x I
F2(RMS)
2/10
STTH1202
Table 4.
Symbol
Characteristics
Dynamic characteristics
Parameter
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25° C
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25° C
Min.
Typ
28
18
5.8
110
2
Max.
35
24
7.5
A
ns
V
Unit
ns
t
rr
Reverse recovery time
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
I
F
= 12 A, dI
F
/dt = -200 A/µs,
V
R
= 160 V, T
j
= 125° C
I
F
= 12 A, dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
I
F
= 12 A, dI
F
/dt = 100 A/µs,
T
j
= 25° C
Figure 1.
I
M
(A)
80
Peak current versus duty cycle
Figure 2.
I
FM
(A)
200
Forward voltage drop versus
forward current (typical values)
I
M
T
180
160
T
j
=150°C
(maximum values)
60
δ
=tp/T
tp
140
120
40
P = 5W
P = 2W
100
80
60
T
j
=150°C
(typical values)
T
j
=25°C
(maximum values)
20
P = 1W
δ
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
40
20
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
FM
(V)
Figure 3.
Relative variation of thermal
impedance, junction to case,
versus pulse duration (TO-220AC,
TO-220AC Ins)
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Z
th(j-c)
/R
th(j-c)
1.0
Single pulse
TO-220AC
TO-220AC Ins
Z
th(j-c)
/R
th(j-c)
1.0
Single pulse
TO-220FPAC
0.1
t
p
(s)
0.1
1.E-03
1.E-02
1.E-01
1.E+00
0.0
1.E-03
1.E-02
t
p
(s)
1.E-01
1.E+00
1.E+01
3/10
Characteristics
STTH1202
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 6.
Reverse recovery charges versus
dI
F
/dt (typical values)
C(pF)
100
200
180
160
140
120
100
80
60
40
Q
rr
(nC)
V
R
=160V
I
F
=12A
T
j
=125°C
T
j
=25°C
V
R
(V)
10
1
10
100
1000
20
0
10
dI
F
/dt(A/µs)
100
1000
Figure 7.
t
rr
(ns)
100
90
80
70
60
50
40
Reverse recovery time versus dI
F
/dt Figure 8.
(typical values)
I
RM
(A)
14
V
R
=160V
I
F
=12A
V
R
=160V
I
F
=12A
Peak reverse recovery current
versus dI
F
/dt (typical values)
12
10
8
6
T
j
=25°C
T
j
=125°C
T
j
=125°C
30
20
10
0
10
100
1000
4
2
T
j
=25°C
dI
F
/dt(A/µs)
0
10
dI
F
/dt(A/µs)
100
1000
Figure 9.
Dynamic parameters versus
junction temperature
Q
rr
;I
RM
[T
j
]/I
RM
[T
j
=125°C]
1.4
V
R
=160V
I
F
=12A
1.2
1.0
0.8
0.6
0.4
0.2
I
RM
Q
RR
T
j
(°C)
0.0
25
50
75
100
125
150
4/10
STTH1202
Ordering information scheme
2
Ordering information scheme
STTH
Ultrafast switching diode
Average forward current
12 = 12 A
Repetitive peak reverse voltage
02 = 200 V
Package
D = TO-220AC
FP = TO-220FPAC
DI = TO-220AC Ins
12 02 XX
5/10
NXP MCU
