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STTH1506DI

15A, 600V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:分立半导体    二极管   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

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器件参数
参数名称
属性值
厂商名称
ST(意法半导体)
包装说明
R-PSFM-T2
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
HIGH VOLTAGE ULTRA FAST SOFT RECOVERY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-220AC
JESD-30 代码
R-PSFM-T2
最大非重复峰值正向电流
85 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最大输出电流
15 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
600 V
最大反向恢复时间
0.05 µs
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
®
STTH1506D/DI
TURBO 2 ULTRA-FAST HIGH VOLTAGE RECTIFIER
PRELIMINARY DATASHEET
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
trr (max)
15 A
600 V
175 °C
1.9 V
50 ns
TO-220AC
STTH1506D
A
K
FEATURES AND BENEFITS
COMBINES HIGHEST RECOVERY AND
VOLTAGE PERFORMANCE.
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY FOR LOW SIDE EFFECTS.
LOW INDUCTANCE, LOW CAPACITANCE,
ALLOWS SIMPLIFIED LAYOUT.
INSULATED VERSION: TO-220AC
Insulated voltage = 2500 V
RMS
Capacitance = 7 pF
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
δ
= 0.5
TO-220AC
Insulated TO-220AC
TO-220AC
Insulated TO-220AC
Tc = 92°C
Tc = 55°C
tp = 10 ms
sinusoidal
Value
600
30
24
15
85
-65 +175
+ 175
Unit
V
A
A
A
°C
°C
A
K
Insulated TO-220AC
STTH1506DI
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
June 1999 - Ed: 2A
1/6
STTH1506D/DI
THERMAL RESISTANCES
Symbol
R
th (j-c)
Parameter
Junction to case thermal resistance
TO-220AC
Insulated TO-220AC
Value
2.2
3.2
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameter
Reverse leakage current
Tests Conditions
V
R
= 600 V
Tj = 25°C
Tj = 125°C
V
F
**
Forward voltage drop
I
F
= 15 A
Tj = 25°C
Tj = 125°C
Pulse test : * tp = 5 ms,
δ
< 2 %
** tp = 380
µs, δ
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 1.3 x I
F(AV)
+ 0.04 I
F(RMS)2
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
trr
I
F
= 0.5 A
I
F
= 1 A
I
RM
S
factor
tfr
V
FP
Qrr
I
F
= 15 A dI
F
/dt = 120 A/µs
V
FR
= 1.1 x V
F
max
V
R
= 400V I
F
= 15 A dI
F
/dt = -200 A/µs
Tj = 25°C
Tests Conditions
Irr = 0.25 A
dI
F
/dt = - 50 A/µs
I
R
= 1 A
V
R
= 30 V
Tj = 125°C
1
200
6
Tj = 125°C
380
Tj = 25°C
Min.
Typ.
Max.
35
50
9.5
A
-
ns
V
nC
Unit
ns
1.5
10
Min.
Typ.
Max.
100
400
2.4
1.9
V
Unit
µA
V
R
= 400 V I
F
= 15 A dI
F
/dt = 200 A/µs
2/6
STTH1506D/DI
Fig. 1:
Conduction losses versus average current.
Fig. 2:
Forward voltage drop versus forward
current.
IFM(A)
δ
= 0.1
δ
= 0.05
δ
= 0.2
δ
= 0.5
PF(av)(W)
40
35
30
25
20
15
10
5
0
0
2
4
6
8
IF(av) (A)
10
12
14
δ
=tp/T
T
200
100
δ
=1
Tj=125°C
Typical values
Tj=25°C
Maximum values
Tj=125°C
Maximum values
10
tp
16
18
20
VFM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Fig. 3:
Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 4:
Peak reverse recovery current versus
dI
F
/dt (90% confidence).
IRM(A)
20
18
16
14
12
10
8
6
4
2
0
VR=400V
Tj=125°C
IF=2 x IF(av)
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
0.4
0.2
δ
= 0.5
IF=IF(av)
IF=0.5xIF(av)
δ
= 0.2
δ
= 0.1
T
Single pulse
tp(s)
1E-2
1E-1
0.0
1E-3
δ
=tp/T
tp
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
1E+0
Fig. 5:
Reverse recovery time dI
F
/dt (90%
confidence).
trr(ns)
220
200
180
160
140
120
100
80
60
40
20
0
VR=400V
Tj=125°C
Fig. 6:
Reverse charges versus dI
F
/dt (90%
confidence).
Qrr(nC)
900
800
700
600
500
400
300
200
100
0
VR=400V
Tj=125°C
IF=2 x IF(av)
IF=2 x IF(av)
IF=IF(av)
IF=IF(av)
IF=0.5xIF(av)
IF=0.5xIF(av)
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
3/6
STTH1506D/DI
Fig. 7:
Softness factor (tb/ta) versus dI
F
/dt
(typical values)
Fig. 8:
Relative variation of dynamic parameters
versus junction temperature (Reference:
Tj=125°C)
S factor
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.5
IF< 2 x IF(av)
VR=400V
Tj=125°C
3.0
2.5
2.0
1.5
1.0
IRM
S factor
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
0.5
0.0
25
50
QRR
Tj(°C)
100
125
150
75
Fig. 9:
Transient peak forward voltage versus
dI
F
/dt (90% confidence).
Fig. 10:
Forward recovery time versus dI
F
/dt (90%
confidence).
VFP(V)
12
11
10
9
8
7
6
5
4
3
2
1
0
tfr(ns)
300
VFR=1.1 x VF max.
IF=IF(av)
Tj=125°C
IF=IF(av)
Tj=125°C
250
200
150
100
dIF/dt(A/µs)
50
dIF/dt(A/µs)
200
250
300
0
50
100
150
0
0
50
100
150
200
250
300
4/6
STTH1506D/DI
PACKAGE MECHANICAL DATA
TO-220AC (Iso.)
DIMENSIONS
B
C
b2
REF.
A
F
Millimeters
15.20
3.75
13.00
10.00
0.61
1.23
4.40
0.49
2.40
4.80
6.20
3.75
2.65
1.14
2.60
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
5.40 0.189
6.60 0.244
3.85 0.147
2.95 0.104
1.70 0.044
15.90 0.598
Inches
0.625
0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.212
0.259
0.151
0.116
0.066
0.102
Min. Typ. Max. Min. Typ. Max.
L
a1
a2
B
b1
b2
C
I
A
l4
a1
c2
c1
c2
e
F
I
I4
l2
a2
15.80 16.40 16.80 0.622 0.646 0.661
b1
e
M
c1
L
l2
M
5/6
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参数对比
与STTH1506DI相近的元器件有:STTH1506D。描述及对比如下:
型号 STTH1506DI STTH1506D
描述 15A, 600V, SILICON, RECTIFIER DIODE, TO-220AC 15A, 600V, SILICON, RECTIFIER DIODE, TO-220AC
厂商名称 ST(意法半导体) ST(意法半导体)
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
应用 HIGH VOLTAGE ULTRA FAST SOFT RECOVERY HIGH VOLTAGE ULTRA FAST SOFT RECOVERY
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 TO-220AC TO-220AC
JESD-30 代码 R-PSFM-T2 R-PSFM-T2
最大非重复峰值正向电流 85 A 85 A
元件数量 1 1
相数 1 1
端子数量 2 2
最高工作温度 175 °C 175 °C
最大输出电流 15 A 15 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 600 V 600 V
最大反向恢复时间 0.05 µs 0.05 µs
表面贴装 NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
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