STTH15AC06C
Turbo 2 ultrafast high voltage rectifier
Datasheet
−
production data
Description
A1
K
A2
K
The STTH15AC06C uses ST Turbo 2 600 V
technology and is suited as a boost diode in air
conditioning equipment for continuous mode
interleaved power factor correction.
The device is also intended for use as a
freewheeling diode in power supplies and other
power switching applications.
A1
K
A2
A1
A2
K
Table 1. Device summary
Symbol
I
F(AV)
V
RRM
t
rr
(max)
Value
2 x 7.5 A
600 V
25 ns
1.5 V
175 °C
TO-220AB
STTH15AC06CT
TO-220FPAB
STTH15AC06CFP
Features
•
Ultrafast switching
•
Low reverse recovery current
•
Reduces switching and conduction losses
•
Low thermal resistance
•
insulated package TO-220FPAB:
– Insulated voltage: 2500 V
DC
V
F
(max)
T
j
(max)
October 2013
This is information on a product in full production.
DocID024884 Rev 1
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www.st.com
11
Characteristics
STTH15AC06C
1
Characteristics
Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Repetitive peak reverse voltage
Forward rms current
Parameter
Value
600
15
Per diode
7.5
Unit
V
A
A
Average forward current
Per device
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
t
p
= 10 ms sinusoidal
15
80
-65 to +175
175
A
°C
°C
Table 3. Thermal parameters
Symbol
Junction to case (TO-220AB)
Total
Coupling (TO-220AB)
R
th(j-c)
Junction to case (TO-220FPAB)
Total
Coupling (TO-220FPAB)
4.5
3
Per diode
1.7
0.6
°C/W
6
Parameter
Per diode
Value
2.8
Unit
Table 4. Static electrical characteristics (per diode)
Symbol
I
R(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
V
F(2)
Forward voltage drop
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
1. Pulse test: t
p
= 5 ms,
δ
< 2%
2. Pulse test: t
p
= 380 µs,
δ
< 2%
V
R
= V
RRM
Min.
Typ.
Max.
1
µA
10
100
1.9
I
F
= 7.5A
1.15
1.50
V
2.2
I
F
= 15A
1.4
1.8
Unit
To evaluate the conduction losses use the following equation:
P = 1.2 x I
F(AV)
+ 0.04 I
F
2
(RMS)
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DocID024884 Rev 1
STTH15AC06C
Table 5. Dynamic characteristics (per diode)
Symbol
t
rr
I
RM
t
fr
V
FP
Parameter
Reverse recovery time
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
Test conditions
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A
I
F
= 1 A, V
R
= 30 V, dI
F
/dt = -50 A/µs
I
F
= 7.5 A, V
R
= 400 V,
dI
F
/dt = -100 A/µs
I
F
= 7.5 A, V
FR
= 1.5 V,
dI
F
/dt = 100 A/µs
Characteristics
Min. Typ. Max. Unit
25
ns
35
3.7
50
5
100
2.5
A
ns
V
Reverse recovery current
Forward recovery time
Forward recovery voltage
Figure 1. Average forward power dissipation
versus average forward current (per diode)
16
14
12
10
8
6
4
2
0
0
1
2
3
I
F(AV)
(
A
)
4
5
6
d
=tp/T
T
Figure 2. Forward voltage drop versus forward
current (typical values, per diode)
100.0
P
F(AV)
(W)
d = 0.05
d = 0.1 d = 0.2
d = 0.5
d=1
I
F
( A)
10.0
T j = 150 °C
T j = 25 °C
1.0
tp
0.1
V
F
(V)
7
8
9
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Figure 3. Forward voltage drop versus forward
current (maximum values, per diode)
I
F
( A)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse
duration (TO-220AB)
Z
th ( j-c)
/R
th ( j-c)
1.0
0.9
TO- 220AB
0.8
0.7
0.6
0.5
Single pulse
0.4
0.3
0.2
0.1
0.0
1.E-04
1.E-03
100.0
10.0
T j = 150 °C
T j = 25 °C
1.0
V
F
(V)
t
P
(s)
1.E-02
1.E-01
1.E+00
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
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Characteristics
STTH15AC06C
Figure 5. Relative variation of thermal
impedance, junction to case, versus pulse
duration (TO-220FPAB)
Z
th ( j-c)
/R
th ( j-c)
1.0
0.9
TO- 220FPAB
0.8
0.7
0.6
0.5
Single pulse
0.4
0.3
0.2
0.1
t
P
(s)
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Figure 6. Peak reverse recovery versus dI
F
/dt
(typical values, per diode)
I
RM
(A)
I
F
= 7.5 A
V
R
= 400 V
T
j
= 125 °C
12
10
8
6
4
2
0
dI
F
/dt(A/µs)
0
50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery time versus dI
F
/dt
(typical values, per diode)
400
350
300
250
200
150
100
50
0
0
dI
F
/dt(A/µs)
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
600
t
RR
(ns)
I
F
= 7.5 A
V
R
= 400 V
T
j
= 125 °C
Q
RR
(nC)
I
F
= 7.5 A
V
R
= 400 V
T
j
= 125 °C
500
400
300
200
100
0
0
dI
F
/dt(A/µs)
50
100
150
200
250
300
350
400
450
500
50 100 150 200 250 300 350 400 450 500
Figure 9. Reverse recovery softness factor
versus dI
F
/dt (typical values, per diode)
3.0
2.5
2.0
1.5
1.0
0.5
Figure 10. Relative variations of dynamic
parameters versus junction temperature
2.0
S
FACTOR
I
F
= 30 A; V
R
= 400 V
Reference: T
j
= 125 °C
S
FACTOR
I
F
= 7.5 A
V
R
= 400 V
T
j
= 125 °C
1.5
1.0
I
RM
0.5
dI
F
/dt(A/µs)
0.0
0
50
100
150
200
250
300
350
400
450
500
0.0
Q
RR
T
j
(°C)
75
100
125
25
50
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DocID024884 Rev 1
STTH15AC06C
Characteristics
Figure 11. Transient peak forward voltage
versus dI
F
/dt (typical values, per diode)
12
10
8
6
4
2
0
dI
F
/dt(A/µs)
Figure 12. Forward recovery time versus dI
F
/dt
(typical values, per diode)
160
140
120
100
80
60
40
20
0
dI
F
/dt(A/µs)
V
FP
(V)
I
F
= 7.5 A
T
j
= 125 °C
t
FR
(ns)
I
F
= 7.5 A
V
R
= 1.5 V
T
j
= 125 °C
50 100 150 200 250 300 350 400 450 500
50 100 150 200 250 300 350 400 450 500
Figure 13. Junction capacitance versus reverse voltage applied (typical values, per diode)
100
C(pF)
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
10
1
V
R
(V)
1
10
100
1000
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