STTH1R06
Turbo 2 ultrafast high voltage rectifier
Features
■
■
■
■
A
Ultrafast switching
A
Low reverse recovery current
Low thermal resistance
Reduces switching and conduction losses
K
K
DO-41
STTH1R06
SMA
STTH1R06A
Description
The STTH1R06, which is using ST Turbo 2 600 V
technology, is specially suited as boost diode in
power factor correction circuitry.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
Table 1.
Symbol
I
F(AV)
V
RRM
I
R
(max)
T
j
V
F
(typ)
t
rr
(max)
A
K
SMB
STTH1R06U
Device summary
Value
1A
600 V
75 µA
175 °C
1.0 V
25 ns
October 2009
Doc ID 10203 Rev 5
1/9
www.st.com
9
Characteristics
STTH1R06
1
Table 2.
Symbol
V
RRM
I
F(RMS)
Characteristics
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
DO-41
Forward rms current
SMA / SMB
DO-41
I
F(AV)
Average forward current
SMA
SMB
DO-41
I
FSM
T
stg
T
j
Surge non repetitive forward current
SMA / SMB
Storage temperature range
Maximum operating junction temperature
t
p
= 10ms sinusoidal
T
c
= 100 °C
T
c
= 125 °C
T
c
= 135 °C
δ
= 0.5
δ
= 0.5
δ
= 0.5
25
A
20
-65 to + 175
175
°C
°C
1
A
7
Value
600
10
A
Unit
V
Table 3.
Symbol
Thermal resistance
Parameter
L = 10 mm
DO-41
SMA
SMB
Value (max)
45
30
25
70
°C/W
°C/W
Unit
R
th(j-l)
Junction to lead
R
th(j-a)
Junction to ambient
(1)
L = 10 mm
DO-41
1. R
th(j-a)
is measured with a copper area S = Scm2 (see
Figure 14).
Table 4.
Symbol
I
R
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 150 °C
Forward voltage drop
T
j
= 25 °C
T
j
= 150 °C
V
R
= V
RRM
Min.
Typ.
Max.
1
µA
10
75
1.7
I
F
= 1A
V
1.0
1.25
Unit
V
F
To evaluate the conduction losses use the following equation: P = 1.03 x I
F(AV)
+ 0.27 I
F2(RMS)
2/9
Doc ID 10203 Rev 5
STTH1R06
Table 5.
Symbol
t
rr
t
fr
V
FP
Characteristics
Dynamic characteristics
Parameter
Test conditions
T
j
= 25 °C
T
j
= 25 °C
T
j
= 25 °C
I
F
= 0.5A I
rr
= 0.25A I
R
=1A
I
F
= 1A dI
F
/dt = -50 A/µs V
R
=30V
dI
F
/dt = 100 A/µs
I
F
= 1A
V
FR
= 1.1 x V
Fmax
I
F
= 1A dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
30
Min.
Typ.
Max.
25
ns
45
100
10
ns
V
Unit
Reverse recovery
time
Forward recovery
time
Forward recovery
voltage
Figure 1.
P(W)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
Conduction losses versus average Figure 2.
forward current
I
FM
(A)
δ
= 0.1
δ
= 0.05
δ
= 0.2
δ
= 0.5
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1.2
0
Forward voltage drop vs forward
current
T
j
=125°C
(maximum values)
T
j
=25°C
(maximum values)
T
j
=125°C
(typical values)
δ
=1
T
I
F(AV)
(A)
0.2
0.4
0.6
0.8
δ
=tp/T
1.0
tp
V
FM
(V)
1
2
3
4
5
Figure 3.
Relative variation of thermal
impedance junction to case vs
pulse duration (DO-41)
Figure 4.
Relative variation of thermal
impedance junction to case vs
pulse duration (SMA)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
δ
= 0.2
δ
= 0.1
δ
= 0.5
Z
th(j-c)
/R
th(j-c)
1.0
S = 1cm
2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
δ
= 0.5
T
0.2
0.1
δ
= 0.2
δ
= 0.1
T
t
p
(s)
1.E+01
0.0
1.E-01
δ
=tp/T
1.E+02
tp
0.0
Single pulse
t
p
(s)
1.E+00
1.E+01
δ
=tp/T
1.E+02
tp
1.E+03
1.E+00
1.E+03
1.E-01
Doc ID 10203 Rev 5
3/9
Characteristics
STTH1R06
Figure 5.
Relative variation of thermal
impedance junction to case vs
pulse duration (SMB)
Figure 6.
Peak reverse recovery current vs
dI
F
/dt (typical values)
Z
th(j-c)
/R
th(j-c)
1.0
S=
1cm
2
I
RM
(A)
9
8
7
I
F
=I
F(AV)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
0.9
0.8
0.7
0.6
0.5
δ
= 0.5
6
I
F
=0.5 x I
F(AV)
5
4
I
F
=0.25 x I
F(AV)
0.4
0.3
δ
= 0.2
3
T
2
1
0
1.E+00
1.E+01
1.E+02
1.E+03
0
50
100
150
200
250
300
350
400
450
500
0.2
0.1
0.0
1.E-01
δ
= 0.1
Single pulse
t
p
(s)
δ
=tp/T
tp
dI
F
/dt(A/µs)
Figure 7.
t
rr
(ns)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
50
Reverse recovery time versus dI
F
/dt Figure 8.
(typical values)
Q
rr
(nC)
250
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
Reverse recovery charges versus
dI
F
/dt (typical values)
225
200
175
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
150
I
F
=I
F(AV)
125
100
75
50
I
F
=0.5 x I
F(AV)
dI
F
/dt(A/µs)
100
150
200
250
300
350
400
450
500
25
0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 9.
S factor
6
I
F
=I
F(AV)
V
R
=400V
T
j
=125°C
Reverse recovery softness factor
vs dI
F
/dt (typical values)
Figure 10. Relative variations of dynamic
parameters vs junction temperature
1.0
0.9
0.8
I
RM
S factor
5
0.7
4
0.6
0.5
Q
RR
3
0.4
2
0.3
0.2
1
0.1
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
T
j
(°C)
25
50
75
I
F
=I
F(AV)
V
R
=400V
Reference: T
j
=125°C
0.0
100
125
4/9
Doc ID 10203 Rev 5
STTH1R06
Characteristics
Figure 11. Transient peak forward voltage vs Figure 12. Forward recovery time vs dI
F
/dt
dI
F
/dt (typical values)
(typical values)
V
FP
(V)
25
I
F
=I
F(AV)
T
j
=125°C
t
fr
(ns)
200
180
160
140
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
20
15
120
100
10
80
60
5
40
dI
F
/dt(A/µs)
0
0
20
40
60
80
100
120
140
160
180
200
20
0
0
20
40
60
dI
F
/dt(A/µs)
80
100
120
140
160
180
200
Figure 13. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
100
F=1MHz
V
OSC
=30mV
T
j
=25°C
Figure 14. Thermal resistance junction to
ambient versus copper surface
under each lead
R
th(j-a)
(°C/W)
110
100
90
80
70
60
SMB
DO-41
Lleads = 10mm
(epoxy FR4, Cu = 35 µm) (DO-41, SMB)
10
50
40
30
20
V
R
(V)
1
1
10
100
1000
10
0
0
1
2
3
4
S(cm²)
5
6
7
8
9
10
Figure 15. Thermal resistance junction to ambient versus copper surface under each lead
(epoxy FR4, Cu = 35 µm) (SMA)
R
th(j-a)
(°C/W)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
SMA
S(cm²)
Doc ID 10203 Rev 5
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