STTH602C
Ultrafast recovery diode
Main product characteristics
I
F(AV)
V
RRM
T
j
(max)
V
F
(typ)
t
rr
(typ)
2x3A
200 V
175° C
0.80 V
14 ns
A1
A2
K
Features and benefits
■
■
■
■
■
■
Suited for SMPS
Low losses
Low forward and reverse recovery time
High surge current capability
High junction temperature
insulated package: TO-220FPAB
A1
K
A2
A2
A1
K
Description
Dual center tap diode suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in TO-220AB and TO-22FPAB, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection.
TO-220AB
STTH602CT
TO-220FPAB
STTH602CFP
Order codes
Part Number
STTH602CT
STTH602CFP
Marking
STTH602C
STTH602C
April 2006
Rev 1
www.st.com
1/9
Characteristics
STTH602C
1
Table 1.
Symbol
V
RRM
I
F(RMS)
Characteristics
Absolute ratings (limiting values at T
j
= 25° C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
RMS forward current
TO-220AB
I
F(AV)
Average forward current,
δ
= 0.5
TO-220FPAB
I
FSM
T
stg
T
j
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Per diode T
c
= 160° C
Per device T
c
= 155° C
Per diode T
c
= 150° C
Per device T
c
= 140° C
t
p
= 10 ms Sinusoidal
Value
200
22
3
A
6
3
A
6
60
-65 to + 175
175
A
°C
°C
Unit
V
A
Table 2.
Symbol
Thermal parameters
Parameter
Per diode
TO-220AB
Per device
3.0
7.5
5.25
1
3
° C/W
Value
5
Unit
R
th(j-c)
Junction to case
Per diode
TO-220FPAB
Per device
TO-220AB
Per diode
Per diode
R
th(c)
Coupling
TO-220FPAB
When the two diodes 1 and 2 are used simultaneously:
∆Tj(diode
1) = P (diode 1) X R
th(j-c)
(Per diode) + P (diode 2) x R
th(c)
Table 3.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
T
j
= 25° C
T
j
= 125° C
T
j
= 25° C
V
R
= V
RRM
Typ
Max.
3
µA
3
0.98
I
F
= 3 A
0.8
1.1
I
F
= 6 A
0.9
30
1.1
0.95
V
1.25
1.05
Unit
V
F(2)
Forward voltage drop
T
j
= 150° C
T
j
= 25° C
T
j
= 150° C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 0.85 x I
F(AV)
+ 0.033 I
F2(RMS)
2/9
STTH602C
Table 4.
Symbol
Characteristics
Dynamic characteristics
Parameter
Test conditions
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
Min.
Typ
14
21
4
24
3.7
Max.
20
30
5.5
A
ns
V
Unit
ns
t
rr
Reverse recovery time
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
I
F
= 3 A, dI
F
/dt = 200 A/µs,
V
R
= 160 V, T
j
= 125 °C
I
F
= 3 A, dI
F
/dt = 200 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
I
F
= 3 A, dI
F
/dt = 200 A/µs,
T
j
= 25 °C
Figure 1.
Peak current versus duty cycle
(per diode)
Figure 2.
Forward voltage drop versus
forward current (typical values per
diode)
I
M
(A)
100
T
I
M
I
FM
(A)
100
80
δ
d
=tp/T
tp
80
60
P = 10 W
60
40
P=5W
P=3W
40
T
j
=150°C
20
20
T
j
=25°C
δ
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
FM
(V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3.
Forward voltage drop versus
forward current (maximum values
per diode)
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration (T0-220AB)
I
FM
(A)
Z
th(j-c)
/R
th(j-c)
1.0
Single pulse
TO-220AB
100
90
80
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T
j
=25°C
T
j
=150°C
V
FM
(V)
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
3/9
Characteristics
STTH602C
Figure 5.
Relative variation of thermal
Figure 6.
impedance junction to case versus
pulse duration (TO-220FPAB)
C(pF)
100
Junction capacitance versus
reverse applied voltage (typical
values per diode)
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
Z
th(j-c)
/R
th(j-c)
1.0
Single pulse
TO-220FPAB
0.1
10
tp(s)
0.0
1.E-03
1
V
R
(V)
1.E-02
1.E-01
1.E+00
1.E+01
1
10
100
1000
Figure 7.
Q
RR
(nC)
100
Reverse recovery charges versus
dI
F
/dt (typical values)
I
F
=3A
V
R
=160V
Figure 8.
t
RR
(ns)
80
70
60
Reverse recovery time versus dI
F
/dt
(typical values)
I
F
=3A
V
R
=160V
80
T
j
=125°C
60
50
40
40
T
j
=25°C
T
j
=125°C
30
20
T
j
=25°C
20
dI
F
/dt(A/µs)
0
50
100
150
200
250
300
350
400
450
500
10
0
dI
F
/dt(A/µs)
0
10
100
1000
Figure 9.
Peak reverse recovery current
versus dI
F
/dt (typical values)
Figure 10. Dynamic parameters versus
junction temperature
Q
RR
; I
RM
[T
j
] / Q
RR
; I
RM
[T
j
=125°C]
1.4
I
F
=3A
V
R
=160V
I
RM
(A)
10
I
F
=3A
V
R
=160V
1.2
1.0
8
6
T
j
=125°C
0.8
0.6
I
RM
4
T
j
=25°C
Q
RR
0.4
0.2
2
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
T
j
(°C)
0.0
25
50
75
100
125
150
4/9
STTH602C
Ordering information scheme
2
Ordering information scheme
STTH
Ultrafast switching diode
Average forward current
6=6A
Repetitive peak reverse voltage
02 = 200 V
Package
CT = TO-220AB
CFP = TO-220FPAB
6 02 Cxx
5/9
嵌入式系统
