STTH802
Ultrafast recovery diode
Datasheet - production data
A
K
K
K
K
Description
This device uses ST's 200 V planar Pt doping
technology, and is especially suited for switching
mode base drive and transistor circuits.
Packaged in TO-220AC, TO-220FPAC, DPAK,
and D
2
PAK this device is intended for use in low
voltage, high frequency inverters, freewheeling
and polarity protection.
Table 1: Device summary
Symbol
K
TO-220AC
K
A
NC
A
A
NC
D2PAK
K
NC
Value
8A
200 V
175 °C
0.8 V
17 ns
I
F(AV)
V
RRM
A
A
TO-220FPAC
K
NC
A
DPAK
T
j
(max.)
V
F
(typ.)
t
rr
(typ.)
Features
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery time
High junction temperature
ECOPACK
®
2 compliant component for
DPAK and D²PAK on demand
Insulated package: TO-220FPAC
Insulating voltage: 2000 V
RMS
sine
August 2017
DocID12362 Rev 3
1/17
www.st.com
This is information on a product in full production.
Characteristics
STTH802
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ = 0.5, square wave
Surge non repetitive
forward current
Storage temperature range
Maximum operating junction temperature
Table 3: Thermal parameter
Symbol
R
th(j-c)
Junction to case
Parameter
TO-220AC, DPAK, D
2
PAK
TO-220FPAC
Max. value
3.2
°C/W
5.5
Unit
TO-220AC, DPAK,
D
2
PAK
TO-220FPAC
tp = 10 ms sinusoidal
T
C
= 145 °C
8
T
C
= 125 °C
100
-65 to +175
175
A
°C
°C
A
Value
200
16
Unit
V
A
I
FSM
T
stg
T
j
Table 4: Static electrical characteristics
Symbol
I
R
(1)
V
F
(2)
Notes:
(1)
(2)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 150 °C
V
R
= V
RRM
Min.
-
-
-
-
Typ.
Max.
6
Unit
µA
6
0.95
0.80
60
1.05
0.90
Forward voltage drop
I
F
= 8 A
V
Pulse test: t
p
= 5 ms, δ < 2%
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.73 x I
F(AV)
+ 0.021 x I
F2(RMS)
2/17
DocID12362 Rev 3
STTH802
Table 5: Dynamic electrical characteristics
Symbol
Parameter
Test conditions
T
j
= 25 °C
t
rr
Reverse recovery time
T
j
= 25 °C
I
F
= 1 A,
dI
F
/dt = -50 A/µs,
V
R
= 30 V
I
F
= 1 A,
dI
F
/dt = -100 A/µs,
V
R
= 30 V
I
F
= 8 A,
dI
F
/dt = -200 A/µs,
V
R
= 160 V
I
F
= 8 A,
dI
F
/dt = 50 A/µs,
V
FR
= 1.1 x V
Fmax
I
F
= 8 A,
dI
F
/dt = 50 A/µs
Min.
-
Characteristics
Typ.
25
Max.
30
Unit
ns
-
17
22
ns
I
RM
Reverse recovery
current
T
j
= 125 °C
-
5.5
7.0
A
t
fr
Forward recovery time
Forward recovery
voltage
T
j
= 25 °C
-
150
ns
V
FP
T
j
= 25 °C
-
1.5
V
DocID12362 Rev 3
3/17
Characteristics
STTH802
1.1
100
Characteristics (curves)
Figure 1: Peak current versus duty cycle
I
M
(A)
Figure 2: Forward voltage drop versus forward
current (typical values)
T
I
M
80
δ
d=tp/T
tp
60
P= 5W
40
P= 2W
P= 1W
20
δ
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
Figure 3: Forward voltage drop versus forward
current (maximum values)
Figure 4: Relative variation of thermal impedance,
junction to case, versus pulse duration
Z
th(j-c)
/R
th(j-c)
1.0
Single pulse
TO-220 AC
DPAK
D
2
PAK
tp(s)
0.1
1.E-03
1.E-02
1.E-01
1.E+00
Figure 5: Relative variation of thermal impedance,
junction to case, versus pulse duration
Z
th(j-c)
/R
th(j-c)
1.0
Single pulse
TO-220F PAC
Figure 6: Junction capacitance versus reverse
applied voltage (typical values)
C(pF)
100
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
0.1
tp(s)
0.0
1.E-03
V
R
(V)
10
1.E-02
1.E-01
1.E+00
1.E+01
1
10
100
1000
4/17
DocID12362 Rev 3
STTH802
Figure 7: Reverse recovery charges versus dI
F
/dt
(typical values)
160
140
120
Characteristics
Figure 8: Reverse recovery time versus dI
F
/dt
(typical values)
80
70
60
T
j
= 125 °C
Q
rr
(nC)
I
F
= 8 A
V
R
= 160 V
t
rr
(ns)
I
F
= 8 A
V
R
= 160 V
100
80
60
40
50
40
30
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
20
20
dI
F
/dt (A/µs)
0
10
100
1000
10
dI
F
/dt (A/µs)
0
10
100
1000
Figure 9: Peak reverse recovery current versus
dI
F
/dt (typical values)
12
10
Figure 10: Relative variation of dynamic
parameters versus junction temperature
1.4
1.2
1.0
I
F
= 8 A
V
R
= 160 V
Reference: T
j
= 125 °C
I
RM
(A)
I
F
= 8 A
V
R
= 160 V
8
0.8
6
4
2
0
10
100
1000
T
j
= 125 °C
I
RM
0.6
0.4
T
j
= 25 °C
Q
rr
0.2
dI
F
/dt (A/µs)
T
j
(°C)
0.0
25
50
75
100
125
150
Figure 11: Thermal resistance, junction to ambient,
versus copper surface under tab
R
th (j-a)
(°C/W )
Figure 12: Thermal resistance, junction to ambient,
versus copper surface under tab
R
th(j-a)
(°C/W)
80
D²PAK
100
DPAK
70
60
50
Epoxy printed board FR4, copper thickness = 35 µm
90
80
70
60
40
30
50
40
30
20
Epoxy printed board FR4, e
Cu=
35 µm
20
10
0
0
5
10
15
20
25
30
35
40
S
Cu
(cm²)
10
0
0
5
10
15
20
25
30
S
Cu
(cm²)
35
40
DocID12362 Rev 3
5/17
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