STTH802SF
Datasheet
200 V ultrafast recovery diode
Features
•
•
•
•
•
•
Low profile design – package typical height of 1.1 mm typ.
Wettable flanks for automatic visual inspection
Very low conduction losses
Negligible switching losses
High junction temperature capability
ECOPACK
®
2 compliant
Applications
•
•
•
•
•
DC/DC converter
High frequency inverter
Snubber
Boost function
Freewheeling diode
Description
This device is an ultrafast recovery diode optimized for switching mode base drive
and transistor circuits.
Packaged in PSMC (TO-277A), the
STTH802SF
provides a high level of
performance in a compact and flat package which can withstand very high operating
junction temperature.
Product status link
STTH802SF
Product summary
Symbol
I
F(AV)
V
RRM
T
j
(max.)
V
F
(typ.)
t
rr
(typ.)
Value
8A
200 V
175 °C
0.79 V
17 ns
DS12649
-
Rev 2
-
July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STTH802SF
Characteristics
1
Characteristics
Table 1.
Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short-
circuited)
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
j
Repetitive peak reverse voltage
Average forward current, δ = 0.5 square pulse
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
T
c
= 145 °C
t
p
= 10 ms sinusoidal
Parameter
Value
200
8
150
-65 to +175
+175
Unit
V
A
A
°C
°C
Table 2.
Thermal resistance parameters
Symbol
R
th(j-c)
Junction to case
Parameter
Typ. value
2.4
Unit
°C/W
For more information, please refer to the following application note:
•
AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3.
Static electrical characteristics (anode terminals short-circuited)
Symbol
I
R
(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
R
= V
RRM
Min.
-
-
-
-
6
0.94
0.79
Typ.
Max.
6
60
1.08
0.91
Unit
µA
V
F
(2)
Forward voltage drop
I
F
= 8 A
V
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation: P = 0.77 x I
F(AV)
+ 0.018 x I
F2(RMS)
For more information, please refer to the following application notes related to the power losses:
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses in a power diode
Table 4.
Dynamic electrical characteristics
Symbol
t
rr
I
RM
Q
rr
Parameter
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Test conditions
T
j
= 25 °C
I
F
= 1.0 A, dI
F
/dt = -50 A/µs, V
R
= 30 V
I
F
= 1.0 A, dI
F
/dt = -100 A/µs, V
R
= 30 V
I
F
= 8 A, dl
F
/dt = -200 A/µs, V
R
= 160 V
Min.
-
-
-
-
17
5.8
100
Typ.
Max.
35
22
7.5
Unit
ns
A
nC
T
j
= 125 °C
DS12649
-
Rev 2
page 2/10
STTH802SF
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Average forward power dissipation versus
average forward current
P(W)
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
Figure 2.
Forward voltage drop versus forward current
(typical values)
I
F
(A)
10
1.0E+02
δ = 0.05
8
1.0E+01
6
1.0E+00
4
T
tp
tp
T
j
= 125 °C
T
j
= 150 °C
T
j
= 25 °C
2
I
F(AV)
(A)
1.0E-01
δ
=tp/T
δ
=tp/T
6
7
8
9
0
0
1
2
3
4
5
10
1.0E-02
0.0
V
F
(V)
0.5
1.0
1.5
2.0
Figure 3.
Forward voltage drop versus forward current
(maximum values)
I
F
(A)
Figure 4.
Relative variation of thermal impedance junction
to case versus pulse duration
Z
th(j-c)
/R
th(j-c)
PSMC (TO-277A)
1.0E+02
1.0
0.9
1.0E+01
0.8
T
j
= 150 °C
0.7
T
j
= 25 °C
T
j
= 125 °C
0.6
0.5
0.4
1.0E+00
1.0E-01
0.3
0.2
0.1
Single pulse
1.0E-02
0.0
V
F
(V)
t
P
(s)
0.5
1.0
1.5
2.0
0.0
1.E-03
1.E-02
1.E-01
1.E+00
DS12649
-
Rev 2
page 3/10
STTH802SF
Characteristics (curves)
Figure 5.
Peak reverse recovery current versus dI
F
/dt
(typical values)
I
RM
(A)
I
F
= I
F(AV)
V
R
= 160 V
T
j
= 125 °C
Figure 6.
Reverse recovery time versus dI
F
/dt (typical
values)
t
RR
(ns)
I
F
= I
F(AV)
V
R
= 160 V
T
j
= 125 °C
12
10
8
6
4
2
60
50
40
30
20
10
dI
F
/dt(A/µs)
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
0
0
100
200
300
400
500
Figure 7.
Reverse recovery charges versus dI
F
/dt (typical
values)
Q
RR
(nC)
I
F
= I
F(AV)
V
R
= 160 V
T
j
= 125 °C
Figure 8.
Reverse recovery softness factor versus dI
F
/dt
(typical values)
S
FACTOR
I
F
= I
F(AV)
V
R
= 160 V
T
j
= 125 °C
180
160
140
120
100
80
60
40
20
0
0.6
0.5
0.4
0.3
0.2
0.1
dI
F
/dt(A/µs)
dI
F
/dt(A/µs)
0
100
200
300
400
500
0.0
0
100
200
300
400
500
Figure 9.
Relative variations of dynamic parameters
versus junction temperature
Figure 10.
Junction capacitance versus reverse voltage
applied (typical values)
C(pF)
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
2.0
I
F
= I
F(AV)
V
R
= 160 V
Reference: T
j
= 125 °C
S
FACTOR
1000
1.6
1.2
100
0.8
I
RM
0.4
Q
RR
0.0
25
50
75
100
T
j
(°C)
V
R
(V)
125
10
1
10
100
1000
DS12649
-
Rev 2
page 4/10
STTH802SF
Characteristics (curves)
Figure 11.
Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy
printed board FR4, e
Cu
= 35 µm) (PSMC (TO-277A))
R
th(j-a)
(°C/W)
PSMC (TO-277A)
120
100
80
60
40
20
S
Cu
(cm²)
0
0
1
2
3
4
5
6
7
8
9
10
DS12649
-
Rev 2
page 5/10
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