STV80NE03L-06
N - CHANNEL 30V - 0.005Ω - 80A - PowerSO-10
STripFET™ MOSFET
T YPE
STV80NE03L-06
s
s
s
s
s
V
DSS
30 V
R
DS(on)
< 0.006
Ω
I
D
80 A
TYPICAL R
DS(on)
= 0.005
Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
10
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(•)
P
tot
dv/dt
T
s tg
T
j
May 2000
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
±
20
80
60
320
150
1
7
-65 to 175
175
(
1
) I
SD
≤
80 A, di/dt
≤
300 A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
1/8
(•) Pulse width limited by safe operating area
STV80NE03L-06
THERMAL DATA
R
thj -case
Rthj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
1
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 15 V)
Max Value
80
600
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
J =
- 40 to 150
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I
D
= 250
µ
A
I
D
= 250
µA
V
GS
= 0
V
GS
= 0
T
c
=25 C
T
c
=25
o
C
o
Min.
27
30
Typ.
Max.
Unit
V
V
DS
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
1
50
±
100
µA
µ
A
nA
ON (∗)
Symbo l
V
GS(th)
R
DS(on)
Parameter
Gate Threshold Voltage V
DS
= V
GS
V
DS
= V
GS
Static Drain-source On
Resistance
V
GS
V
GS
V
GS
V
GS
=
=
=
=
10V
5V
10V
5V
Test Con ditions
I
D
= 250
µA
I
D
= 250
µA
I
D
=
I
D
=
I
D
=
I
D
=
40
40
40
40
A
A
A
A
T
J
=25 C
o
Min.
0.6
Typ.
1.7
Max.
3.0
2.5
0.012
0.018
0.006
0.009
Unit
V
Ω
Ω
Ω
Ω
A
T
J
=25
o
C
o
T
J
=25 C
40
0.005
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(∗)
C
iss
C
os s
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Con ditions
V
DS
> I
D(o n)
x R
DS(on )ma x
V
DS
= 25 V
f = 1 MHz
I
D
=40 A
V
GS
= 0
Min.
20
6500
1500
500
8700
2000
700
Typ.
Max.
Unit
S
pF
pF
pF
2/8
STV80NE03L-06
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Time
Rise Time
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V
DD
= 15 V
I
D
= 40 A
R
G
=4.7
Ω
V
GS
= 5 V
(see test circuit, figure 3)
V
DD
= 24 V
I
D
= 80 A
V
GS
= 5 V
Min.
Typ.
40
260
95
30
44
Max.
55
350
130
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
r (Voff)
t
f
t
c
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
V
DD
= 24 V
I
D
= 80 A
R
G
=4.7
Ω
V
GS
= 5 V
(see test circuit, figure 5)
Min.
Typ.
70
165
250
Max.
95
220
340
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(•)
V
SD
(
∗
)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 80 A
V
GS
= 0
75
0.14
4
I
SD
= 80 A
di/dt = 100 A/
µ
s
o
T
j
= 150 C
V
DD
= 15 V
(see test circuit, figure 5)
Test Con ditions
Min.
Typ.
Max.
80
320
1.5
Unit
A
A
V
ns
µ
C
A
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for
Thermal Impedance
3/8
STV80NE03L-06
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STV80NE03L-06
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
