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STZ8091C

Silicon Planar Zener Diodes

厂商名称:HTSEMI( Jin Yu Semiconductor )

厂商官网:http://www.htsemi.com

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STZ8000 Series
Silicon Planar Zener Diodes
For stabilization of power supply application
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
Top View
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
Repetitive Peak Forward Current
Junction Temperature
Storage Temperature Range
Symbol
P
tot
I
FRM
T
j
T
stg
Value
300
200
150
- 55 to + 150
Unit
mW
mA
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at I
F
= 10 mA
Symbol
R
thA
V
F
Value
417
1
Unit
O
C/W
V
1 
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05
STZ8000 Series
Zener Voltage Range
Type
Marking
Code
1C
1D
1C1
7D
1E
1F1
7E
1F
1J1
7F
1H
1M1
7H
1J
1Q1
7J
1K
1T1
7K
1W1
1M
1Y1
EB
2A1
1N
2C1
EC
2E1
1P
2G1
ED
2J1
1R
2L1
7R
2N1
1X
2Q1
7X
2S1
1Y
2U1
7Y
2X1
5
5
5
5
5
5
5
5
5
5
5
5
l
ZT
mA
STZ8024
STZ8027
STZ8027A
STZ8027B
STZ8030
STZ8030A
STZ8030B
STZ8033
STZ8033A
STZ8033B
STZ8036
STZ8036A
STZ8036B
STZ8039
STZ8039A
STZ8039B
STZ8043
STZ8043A
STZ8043B
STZ8043C
STZ8047
STZ8047A
STZ8047B
STZ8047C
STZ8051
STZ8051A
STZ8051B
STZ8051C
STZ8056
STZ8056A
STZ8056B
STZ8056C
STZ8062
STZ8062A
STZ8062B
STZ8062C
STZ8068
STZ8068A
STZ8068B
STZ8068C
STZ8075
STZ8075A
STZ8075B
STZ8075C
5
for
V
Z
V
2.28…2.6
2.5…2.9
2.5…2.75
2.65…2.9
2.8…3.2
2.8…3.05
2.95…3.2
3.1…3.5
3.1…3.35
3.25…3.5
3.4…3.8
3.4…3.65
3.55…3.8
3.7…4.1
3.7…3.97
3.87…4.1
4…4.6
4.03…4.26
4.17…4.4
4.31…4.54
4.4…5
4.45…4.69
4.59…4.83
4.74…4.99
4.8…5.4
4.87…5.12
5…5.26
5.14…5.4
5.3…6
5.3…5.58
5.48…5.76
5.66…5.95
5.8…6.6
5.85…6.15
6.05…6.36
6.24…6.56
6.4…7.2
6.44…6.77
6.64…6.98
6.85…7.2
7…7.9
7.07…7.43
7.29…7.67
7.51…7.89
20
60
0.5
0.5
4
4
20
60
0.5
0.5
3.5
3
30
100
0.5
1
3
2.3
40
200
0.5
1
2.5
1.2
60
500
1
2
1.5
-0.8
80
800
1
2
1
-1.4
130
-
-
10
1
-2.5
130
-
-
10
1
-2.5
130
-
-
10
1
-2.4
130
-
-
20
1
-2.4
120
-
-
50
1
-2.1
110
-
-
120
1
-2
1)
Dynamic Impedance
Z
ZT
(Max.)
100
Z
ZK
(Max.)
-
at I
ZK
mA
-
Reverse Leakage
Current
I
R
μA
(Max.)
120
at V
R
V
1
Temp. coefficient of
Zener Voltage
S
Z
(mV/
O
C)
Typ. at I
ZT
-1.6
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05
STZ8000 Series
Zener Voltage Range
Type
Marking
Code
1Z
2Z1
EJ
3B1
2A
3D1
EK
3F1
2B
3H1
8B
3K1
2C
3M1
EN
3P1
2D
3R1
8D
3T1
2E
3W1
ER
3Y1
3Z1
2F
4B1
EX
4D1
2H
4F1
8H
4H1
2J
4K1
8J
4M1
2K
4P1
8K
4R1
2M
4T1
8M
4W1
5
5
5
5
5
5
5
5
5
5
5
5
l
ZT
mA
STZ8082
STZ8082A
STZ8082B
STZ8082C
STZ8091
STZ8091A
STZ8091B
STZ8091C
STZ8100
STZ8100A
STZ8100B
STZ8100C
STZ8110
STZ8110A
STZ8110B
STZ8110C
STZ8120
STZ8120A
STZ8120B
STZ8120C
STZ8130
STZ8130A
STZ8130B
STZ8130C
STZ8140
STZ8150
STZ8150A
STZ8150B
STZ8150C
STZ8160
STZ8160A
STZ8160B
STZ8160C
STZ8180
STZ8180A
STZ8180B
STZ8180C
STZ8200
STZ8200A
STZ8200B
STZ8200C
STZ8220
STZ8220A
STZ8220B
STZ8220C
for
V
Z
V
7.7…8.7
7.77…8.17
8.03…8.43
8.29…8.7
8.5…9.6
8.58…9.02
8.87…9.33
9.14…9.6
9.4…10.6
9.44…9.92
9.75…10.25
10.07…10.59
10.4…11.6
10.4…10.94
10.73…11.28
11.05…11.6
11.4…12.7
11.4…11.96
11.73…12.33
12.06…12.68
12.4…14.1
12.4…12.99
12.73…13.4
13.25…14.08
13.65…14.35
13.9…15.6
13.9…14.76
14.6…15.35
14.95…15.6
15.3…17.1
15.3…16.09
15.7…16.5
16.26…17.1
16.9…19.1
16.9…17.76
17.55…18.45
18.2…19.1
18.8…21.2
18.85…19.81
19.5…20.5
20.15…21.19
20.8…23.3
20.8…21.86
21.45…22.55
22.1…23.24
80
100
0.5
0.1
17
18.4
80
100
0.5
0.1
15
16.4
60
80
0.5
0.1
13
14.4
50
80
0.5
0.1
12
12.4
40
80
0.5
0.1
11
11.4
40
80
0.5
0.1
10
10
35
80
0.5
0.1
10
9.4
30
80
0.5
0.1
9
8.4
30
60
0.5
0.1
8
7.4
30
60
0.5
0.1
7
6.4
20
60
0.5
0.5
6
5.5
20
60
0.5
0.5
5
4.6
1)
Dynamic Impedance
Z
ZT
(Max.)
Z
ZK
(Max.)
at I
ZK
mA
Reverse Leakage
Current
I
R
μA
(Max.)
at V
R
V
Temp. coefficient of
Zener Voltage
S
Z
(mV/
O
C)
Typ. at I
ZT
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05
STZ8000 Series
Zener Voltage Range
Type
Marking
Code
2N
4Y1
FC
5A1
2P
5C1
FD
5E1
2R
5G1
FE
5J1
2X
5L1
8X
5N1
2Y
5Q1
8Y
5S1
2Z
5U1
FJ
5X1
2
2
2
2
2
5
l
ZT
mA
STZ8240
STZ8240A
STZ8240B
STZ8240C
STZ8270
STZ8270A
STZ8270B
STZ8270C
STZ8300
STZ8300A
STZ8300B
STZ8300C
STZ8330
STZ8330A
STZ8330B
STZ8330C
STZ8360
STZ8360A
STZ8360B
STZ8360C
STZ8390
STZ8390A
STZ8390B
STZ8390C
1)
1)
Dynamic Impedance
Z
ZT
(Max.)
Z
ZK
(Max.)
at I
ZK
mA
Reverse Leakage
Current
I
R
μA
(Max.)
at V
R
V
Temp. coefficient of
Zener Voltage
S
Z
(mV/
O
C)
Typ. at I
ZT
for
V
Z
V
22.8…25.6
22.8…23.97
23.5…24.7
24.35…25.6
25.1…28.9
25.3…26.7
26.3…27.7
27.3…28.7
28…32
28.3…29.7
29.3…30.8
30.2…31.8
31…35
31.2…32.8
32.2…33.8
33.2…34.9
34…38
34.1…35.9
35.1…36.9
36.1…37.9
37…41
37.1…39
38…40
39…41
100
120
0.5
0.1
19
20.4
120
120
0.5
0.1
21
23.4
160
160
0.5
0.1
23
26.6
200
200
0.5
0.1
25
29.7
250
250
0.5
0.1
27
33
300
300
0.5
2
30
35.6
V
Z
is tested with pulses (20 ms).
300
Power Dissipation: Ptot (mW)
200
100
0
0
25
100
Ambient Temperature: Ta ( C)
O
150
Derating Curve
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05
STZ8000 Series
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
H
E
D
A
E
b
p
UNIT
mm
A
1.10
0.80
b
p
0.40
0.25
C
0.15
0.10
D
1.80
1.60
E
1.35
1.15
H
E
2.80
2.30
JinYu
semiconductor
www.htsemi.com
D½½½:2011/05
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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