b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
V
GS
= 10
V
thru 7
V
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
80
100
80
60
60
40
T
C
= 125 °C
20
- 55 °C
25 °C
0
40
6
V
20
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
- Drain-to-So
u
rce
V
oltage (
V
)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
120
T
C
= - 55 °C
25 °C
72
125 °C
48
R
DS(on)
- On-Resistance (Ω)
96
g
fs
- Transconductance (S)
0.0053
0.0055
Transfer Characteristics
0.0051
V
GS
= 10
V
0.0049
24
0.0047
0
0
12
24
36
48
60
0.0045
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.05
I
D
= 20 A
R
DS(on)
- On-Resistance (Ω)
0.04
25 °C
0.03
C - Capacitance (pF)
4800
6000
On-Resistance vs. Drain Current
C
iss
3600
0.02
150 °C
0.01
2400
1200
C
oss
C
rss
0
12
24
36
48
60
0.00
4
5
6
7
8
9
10
0
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
Capacitance
www.vishay.com
3
SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
I
D
= 50 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 15
V
R
DS(on)
- On-Resistance
V
DS
= 30
V
6
V
DS
= 45
V
1.7
V
GS
= 10
V
(Normalized)
1.4
2.0
I
D
= 20 A
4
1.1
2
0.8
0
0
17
34
51
68
85
0.5
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
0.8
Threshold Voltage
I
S
- Source Current (A)
10
150 °C
V
GS(th)
Variance
(V)
0.2
1.0
25 °C
0.1
- 0.4
I
D
= 5 mA
- 1.0
I
D
= 250
µA
- 1.6
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 2.2
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Junction Temperature (°C)
Gate Charge
76
I
D
= 1 mA
73
100
On-Resistance vs. Junction Temperature
V
DS
(normalized)
70
I
DAV
(A)
150 °C
25 °C
67
10
64
61
58
- 50
- 25
0
25
50
75
100
125
150
175
1
0.00001
0.0001
0.001
0.01
T
AV
(s)
0.1
1.0
T
J
- Junction Temperature (°C)
Source-Drain Diode Forward Voltage
Maximum Drain Current vs. Case Temperature
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4
Document Number: 69536
S09-0703-Rev. B, 27-Apr-09
SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS
185
25 °C, unless otherwise noted
1000
Limited
by
R
DS(on)
*
148
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
111
Package Limited
74
10
1 ms
10 ms
100 ms
DC
37
1
T
C
= 25 °C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
*
V
GS
1
10
100
T
C
- Case Temperature (°C)
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Single Pulse Avalanche Current Capability vs. Time
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
