SAMWIN
SW7N60K
N-channel TO-220F/I-PAK MOSFET
BV
DSS
: 600V
I
D
: 7.0A
R
DS(ON)
:0.6 ohm
1
2
2
3
1
2
3
1
3
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.6Ω)@V
GS
=10V
■
Gate Charge (Typical 21nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220F
TO-251
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
Order Codes
Item
1
2
Sales Type
SW F 7N60
SW I 7N60
Marking
SW7N60K
SW7N60K
Package
TO-220F
TO-251
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
19.8
0.16
-55 ~ + 150
300
(note 1)
Parameter
Value
TO-220F
600
7*
4.4*
28
±
30
120
8
24
166.7
1.33
TO-251
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
47.56
80.52
Value
TO-220F
6.32
TO-251
0.75
Unit
o
C/W
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
1/6
SAMWIN
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
C
=125
o
C
V
GS
=30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
600
Parameter
Test conditions
Min.
SW7N60K
Typ.
Max.
Unit
V
0.62
1
50
100
-100
V/
o
C
uA
uA
nA
nA
On characteristics
V
GS(TH)
R
DS(ON)
G
fs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 3.5A
V
DS
= 20 V, I
D
= 3.5A
5
2
0.5
4
0.6
V
Ω
S
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=480V, V
GS
=10V, I
D
=7A
(note 4,5)
V
DS
=300V, I
D
=7A, R
G
=25Ω
(note 4,5)
V
GS
=0V, V
DS
=25V, f=1MHz
561
414
20
9
28
ns
62
30
21
3
11
nC
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Reverse recovery Charge
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=7.0A, V
GS
=0V
I
S
=7.0A, V
GS
=0V,
dI
F
/dt=100A/us
0.8
234
2.2
Min.
Typ.
Max.
7
28
1.15
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 60mH, I
AS
= 2A, V
DD
= 50V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 7A, di/dt = 100A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
2/6
SAMWIN
Fig. 1. On-state characteristics
SW7N60K
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
3/6
SAMWIN
Fig. 7. Maximum safe operating area(TO-220F)
SW7N60K
Fig. 8. Transient thermal response curve(TO-220F)
Fig. 9. Maximum safe operating area(TO-251)
Fig. 10. Transient thermal response curve(TO-251)
Fig. 11. Capacitance Characteristics
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
4/6
SAMWIN
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
V
GS
Q
G
10V
SW7N60K
V
DS
Q
GS
Q
GD
DUT
V
GS
1mA
Charge
nC
Fig. 13. Switching time test circuit & waveform
R
L
V
DS
90%
R
GS
V
DS
V
DD
V
IN
10%
t
d(on)
t
r
t
ON
10%
t
d(off)
t
f
t
OFF
10V
IN
DUT
Fig. 14. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev.1.0
5/6
