SAMWIN
SW19N10
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.1Ω)@V
GS
=10V
■
Gate Charge (Typ 100nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220
TO-252
BV
DSS
: 100V
I
D
: 17A
R
DS(ON)
: 0.1 ohm
1
1
2
3
2
3
2
1. Gate 2. Drain 3. Source
1
General Description
This N-channel enhancement mode field-effect power transistor using SAMWIN
semiconductor’s advanced planar stripe, DMOS technology intended for battery
Operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize R
DS(ON)
, low gate charge and high rugged
avalanche characteristics.
3
Order Codes
Item
1
2
Sales Type
SW P 19N10
SW D 19N10
Marking
SW19N10
SW19N10
Package
TO-220
TO-252
Packaging
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
100
17
11
68
±
25
215
7.5
6.0
62.5
0.5
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
Mar. 2011. Rev. 2.0
Parameter
Min.
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Typ.
0.5
62.5
Max.
2.0
Unit
o
C/W
o
C/W
o
C/W
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SAMWIN
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=100V, V
GS
=0V
V
DS
=80V, T
C
=125
o
C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
100
-
-
-
-
-
Parameter
Test conditions
Min.
SW19N10
Typ.
Max.
Unit
-
0.1
-
-
-
-
-
-
1
100
100
-100
V
V/
o
C
uA
uA
nA
nA
On characteristics
V
GS(TH)
R
DS(ON)
Gate threshold voltage
Drain to source on state resistance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 30A
2.0
-
-
-
4.0
0.1
V
Ω
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=80V, V
GS
=10V, I
D
=57A
V
DS
=50V, I
D
=57A, R
G
=25Ω
V
GS
=0V, V
DS
=25V, f=1MHz
-
-
-
-
-
-
-
-
-
-
600
165
32
7.5
150
20
65
19
3.9
9.0
780
215
40
25
310
50
140
25
-
-
nC
ns
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Breakdown voltage temperature
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=57A, V
GS
=0V
I
S
=57A, V
GS
=0V,
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
78
200
Max.
15.6
62.4
1.5
-
-
Unit
A
A
V
ns
nC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 270uH, I
AS
= 57A, V
DD
= 25V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 57A, di/dt = 300A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
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SAMWIN
Fig. 1. On-state characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
SW19N10
Fig. 2. Transfer characteristics
10
2
10
2
I
D
, Drain Current [A]
I
D
, Drain Current [A]
175 C
10
1
o
10
1
25 C
-55 C
o
o
،ط Notes :
1. 250¥ىs Pulse Test
2. T
C
= 25،ة
،ط Notes :
1. V
DS
= 25V
2. 250¥ىs Pulse Test
10
0
10
-1
10
0
10
1
10
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
30
Fig. 4. On state current vs.
diode forward voltage
Drain-Source On-Resistance [m¥ط]
20
V
GS
= 10V
15
I
DR
, Reverse Drain Current [A]
25
V
GS
= 20V
10
2
R
DS(ON)
,
10
1
10
175،ة
25،ة
،ط Notes :
1. V
GS
= 0V
2. 250¥ىs Pulse Test
0
5
،ط Note : T
J
= 25،ة
0
0
50
100
150
200
250
300
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
5500
5000
4500
4000
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Fig. 6. Gate charge characteristics
12
V
DS
= 50V
10
V
GS
, Gate-Source Voltage [V]
V
DS
= 80V
8
Capacitance [pF]
3500
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
،ط Notes :
1. V
GS
= 0V
2. f=1MHz
C
iss
6
4
C
oss
2
،ط Note : I
D
= 57 A
C
rss
30
35
0
0
10
20
30
40
50
60
70
80
90
100
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
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SAMWIN
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
SW19N10
Fig. 8. On resistance variation
vs. junction temperature
3.0
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
1.1
Drain-Source On-Resistance
2.5
BV
DSS
, (Normalized)
2.0
1.0
1.5
1.0
0.9
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
0.5
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 30 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig. 9. Maximum drain current vs.
case temperature.
80
Fig. 10. Maximum safe operating area
3
10
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
60
100
s
10
2
I
D'
Drain Current [A]
1 ms
10 ms
DC
10
1
40
20
،ط Notes :
o
1. T
C
= 25 C
2. T
J
= 175 C
3. Single Pulse
o
0
25
10
0
50
75
100
125
o
150
175
10
-1
10
0
10
1
10
2
T
C'
Case Temperature [ C]
V
DS
, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
10
0
Z
¥èJC
(t), Thermal Response
D=0.5
0.2
10
-1
،ط Notes :
1. Z
¥èJC
(t) = 0.92 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
0.1
0.05
0.02
0.01
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
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SAMWIN
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
V
GS
Q
G
SW19N10
V
DS
Q
GS
Q
GD
DUT
V
GS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
R
L
V
DS
90%
R
G
V
DS
V
DD
V
IN
10%
t
d(on)
t
r
t
ON
10%
t
d(off)
t
f
t
OFF
10V
IN
DUT
Fig. 14. Unclamped Inductive switching test circuit & waveform
1
L
I
AS
V
DS
R
G
10V
IN
V
DD
I
D(t)
EAS =
BV
DSS
I
AS
2
BV
DSS
LX
I
AS2
X
BV
DSS
- V
DD
DUT
V
DS(t)
time
t
p
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