SAMWIN
SW30N06
N-channel MOSFET
Features
■
High ruggedness
■
R
DS(ON)
(Max 0.036
Ω)@V
GS
=10V
■
Gate Charge (Typ 20nC)
■
Improved dv/dt Capability
■
100% Avalanche Tested
TO-220
TO-251
TO-252
BV
DSS
: 60V
I
D
: 30A
R
DS(ON)
: 0.036 ohm
2
1
1
2
3
1
2
3
2
3
1. Gate 2. Drain 3. Source
1
General Description
These N-channel enhancement mode power field effect transistors are produced using
SAMWIN’s proprietary, planar stripe, DMOS technology.
This advanced technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers
3
Order Codes
Item
1
2
3
Sales Type
SW P 30N06
SW I 30N06
SW D 30N06
Marking
SW30N06
SW30N06
SW30N06
Package
TO-220
TO-251
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
, T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@T
C
=25
o
C)
Continuous Drain Current (@T
C
=100
o
C)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
Total power dissipation (@T
C
=25
o
C)
Derating Factor above 25
o
C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
(note 2)
(note 1)
(note 3)
(note 1)
Parameter
Value
60
30
14
120
±
20
178
4.0
7.0
44
0.57
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/
o
C
o
C
o
C
Thermal characteristics
Symbol
R
thjc
R
thcs
R
thja
May. 2011. Rev. 3.0
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
Min.
Typ.
Max.
2.85
50
110
Unit
o
C/W
o
C/W
o
C/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1/7
SAMWIN
Electrical characteristic
( T
C
= 25
o
C unless otherwise specified )
Symbol
Off characteristics
BV
DSS
ΔBV
DSS
/ ΔT
J
I
DSS
Drain to source breakdown voltage
Breakdown voltage temperature
coefficient
Drain to source leakage current
Gate to source leakage current, forward
I
GSS
Gate to source leakage current, reverse
V
GS
=0V, I
D
=250uA
I
D
=250uA, referenced to 25
o
C
V
DS
=60V, V
GS
=0V
V
DS
=48V, T
C
=125
o
C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
60
-
-
-
-
-
Parameter
Test conditions
Min.
SW30N06
Typ.
Max.
Unit
-
0.06
-
-
-
-
-
-
1
50
100
-100
V
V/
o
C
uA
uA
nA
nA
On characteristics
V
GS(TH)
R
DS(ON)
Gate threshold voltage
Drain to source on state resistance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V, I
D
= 15A
2.0
-
0.027
4.0
0.036
V
Ω
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
Turn off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
=48V, V
GS
=10V, I
D
=30A
V
DS
=30V, I
D
=15A, R
G
=25Ω
V
GS
=0V, V
DS
=25V, f=1MHz
580
220
60
9
65
40
37
20
5
10
26
-
-
nC
ns
760
280
80
pF
Source to drain diode ratings characteristics
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Parameter
Continuous source current
Pulsed source current
Diode forward voltage drop.
Reverse recovery time
Breakdown voltage temperature
Test conditions
Integral reverse p-n Junction
diode in the MOSFET
I
S
=30A, V
GS
=0V
I
S
=30A, V
GS
=0V,
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
44
62
Max.
30
120
1.4
-
-
Unit
A
A
V
ns
uC
※.
Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 360uH, I
AS
= 30.0A, V
DD
= 25V, R
G
=25Ω, Starting T
J
= 25
o
C
3.
I
SD
≤ 30.0A, di/dt = 300A/us, V
DD
≤ BV
DSS
, Staring T
J
=25
o
C
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
2/7
SAMWIN
Fig. 1. On-state characteristics
SW30N06
Fig. 2. Transfer characteristics
10
2
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
10
2
I
D
, Drain Current [A]
10
1
I
D
, Drain Current [A]
10
1
175 C
25 C
-55 C
o
o
o
*. Notes :
1. 250us Pulse Test
O
2. T
C
= 25 C
*. Notes :
1. V
DS
=V
GS
2. 250us Pulse Test
10
0
10
-1
10
0
10
1
10
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Fig. 3. On-resistance variation vs.
drain current and gate voltage
100
Fig. 4. On state current vs.
diode forward voltage
10
2
Drain-Source On-Resistance[m¥ط]
V
GS
= 10V
60
R
DS(ON)
,
V
GS
= 20V
40
I
DR
, Reverse Drain Current[A]
80
10
1
175 C
25 C
*. Notes :
1. V
GS
= 0V
2. 250us Pulse Test
0
O
O
20
*. Note : T
J
= 25 C
O
0
0
20
40
60
80
100
120
140
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage[V]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
1500
C
iss
=C
gs
+C
gd
(C
ds
=shorted)
C
oss
=C
ds
+C
gd
C
rss
=C
gd
Fig. 6. Gate charge characteristics
12
10
V
DS
= 48V
V
DS
= 30V
V
GS
, Gate-Source Voltage [V]
Capacitance [pF]
1000
C
iss
*. Notes :
1. V
GS
= 0V
2. f=1MHz
8
6
500
C
oss
C
rss
4
2
*. Note : I
D
= 30.0 A
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
25
V
DS
, Drain-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
3/7
SAMWIN
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
3.0
SW30N06
Fig. 8. On resistance variation
vs. junction temperature
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
1.1
Drain-Source On-Resistance
2.5
BV
DSS
, (Normalized)
2.0
1.0
1.5
1.0
0.9
*. Notes :
1. V
GS
= 0 V
2. I
D
= 250 uA
0.5
*. Notes :
1. V
GS
= 10 V
2. I
D
= 15 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig. 9. Maximum drain current vs.
case temperature.
35
Fig. 10. Maximum safe operating area
10
3
30
Operation in This Area
is Limited by R
DS(on)
10
2
I
D'
Drain Current [A]
25
I
D
, Drain Current [A]
100us
1 ms
10 ms
20
10
1
15
DC
10
10
0
5
*. Notes :
o
1. T
C
= 25 C
2. T
J
= 175 C
3. Single Pulse
o
0
25
50
75
100
125
o
150
175
10
-1
10
-1
10
0
10
1
10
2
T
C'
Case Temperature [ C]
V
DS
, Drain-Source Voltage [V]
Fig. 11. Transient thermal response curve
Z
¥èJC
(t), Thermal Response
10
0
D=0.5
0.2
0.1
*. Notes :
O
1. Z
¥èJC
(t) = 1.78 C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
10
-1
0.05
0.02
0.01
single pulse
t
1
t
2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, Square Wave Pulse Duration [sec]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
4/7
SAMWIN
Fig. 12. Gate charge test circuit & waveform
Same type
as DUT
V
GS
Q
G
SW30N06
V
DS
Q
GS
Q
GD
DUT
V
GS
1mA
Charge
Fig. 13. Switching time test circuit & waveform
R
L
V
DS
90%
R
G
V
DS
V
DD
V
IN
10%
t
d(on)
t
r
t
ON
10%
t
d(off)
t
f
t
OFF
10V
IN
DUT
Fig. 14. Unclamped Inductive switching test circuit & waveform
1
L
I
AS
V
DS
R
G
10V
IN
V
DD
I
D(t)
EAS =
BV
DSS
I
AS
2
BV
DSS
LX
I
AS2
X
BV
DSS
- V
DD
DUT
V
DS(t)
time
t
p
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
5/7
