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SZ1SMA75AT3G

DIODE TVS DIODE, Transient Suppressor

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
包装说明
R-PDSO-C2
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
最大击穿电压
92.1 V
最小击穿电压
83.3 V
击穿电压标称值
87.7 V
最大钳位电压
121 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-C2
最大非重复峰值反向功率耗散
400 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
参考标准
AEC-Q101
最大重复峰值反向电压
75 V
表面贴装
YES
技术
ZENER
端子形式
C BEND
端子位置
DUAL
Base Number Matches
1
文档预览
1SMA5.0AT3G Series,
SZ1SMA5.0AT3G Series
400 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMA series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC
package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Features
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0
78 V, 400 W PEAK POWER
SMA
CASE 403D
STYLE 1
Working Peak Reverse Voltage Range
5.0 V to 78 V
Standard Zener Breakdown Voltage Range
6.7 V to 91.25 V
Peak Power
400 W @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Response Time is Typically < 1 ns
Flat Handling Surface for Accurate Placement
Package Design for Top Slide or Bottom Circuit Board Mounting
Low Profile Package
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE:
Void-free, transfer-molded plastic
FINISH:
All external surfaces are corrosion resistant and leads are
CATHODE
ANODE
MARKING DIAGRAM
xx
AYWWG
xx
A
Y
WW
G
= Device Code (Refer to page 3)
= Assembly Location
= Year
= Work Week
= Pb−Free Package
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
ORDERING INFORMATION
Device
1SMAxxAT3G
SZ1SMAxxAT3G
Package
SMA
(Pb−Free)
SMA
(Pb−Free)
Shipping
5,000 /
Tape & Reel
5,000 /
Tape & Reel
260C for 10 Seconds
POLARITY:
Cathode indicated by molded polarity notch or polarity
band
MOUNTING POSITION:
Any
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
February, 2012
Rev. 14
1
Publication Order Number:
1SMA5.0AT3/D
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3) @ T
A
= 25C
Derate Above 25C
Thermal Resistance from Junction to Ambient
Forward Surge Current (Note 4) @ T
A
= 25C
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
I
FSM
T
J
, T
stg
Value
400
1.5
20
50
0.5
4.0
250
40
−65
to +150
Unit
W
W
mW/C
C/W
W
mW/C
C/W
A
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000
ms,
non−repetitive.
2. 1 square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
otherwise noted, V
F
= 3.5 V Max. @ I
F
= 30 A for all types) (Note 5)
I
I
F
V
C
V
BR
V
RWM
I
R
V
F
I
T
V
I
PP
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non−repetitive duty
cycle.
Uni−Directional TVS
http://onsemi.com
2
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series
ELECTRICAL CHARACTERISTICS
V
RWM
(Note 6)
Volts
5.0
6.0
6.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
54
58
70
75
I
R
@
V
RWM
mA
400
400
250
25
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Breakdown Voltage
V
BR
(Volts)
(Note 7)
Min
6.4
6.67
7.22
8.89
9.44
10
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
44.4
47.8
50
53.3
60
64.4
77.8
83.3
Nom
6.7
7.02
7.6
9.36
9.92
10.55
11.7
12.85
14.0
15.15
16.4
17.6
18.75
19.9
21.05
23.35
25.65
28.1
30.4
32.75
35.05
38.65
42.1
46.75
50.3
52.65
56.1
63.15
67.8
81.9
87.7
Max
7.0
7.37
7.98
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
66.3
71.5
86.0
92.1
@ I
T
mA
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 8)
V
C
Volts
9.2
10.3
11.2
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.2
77.4
87.1
93.6
113
121
I
PP
Amps
43.5
38.8
35.7
29.4
27.8
26.0
23.5
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.8
5.5
5.2
4.6
4.3
3.5
3.3
C Typ.
(Note 9)
pF
2035
1730
1605
1035
1265
1200
1090
1000
925
860
800
758
715
680
645
585
540
500
460
430
405
375
345
315
295
280
265
240
225
190
180
Device*
1SMA5.0AT3G
1SMA6.0AT3G
1SMA6.5AT3G
1SMA8.0AT3G
1SMA8.5AT3G
1SMA9.0AT3G
1SMA10AT3G
1SMA11AT3G
1SMA12AT3G
1SMA13AT3G
1SMA14AT3G
1SMA15AT3G
1SMA16AT3G
1SMA17AT3G
1SMA18AT3G
1SMA20AT3G
1SMA22AT3G
1SMA24AT3G
1SMA26AT3G
1SMA28AT3G
1SMA30AT3G
1SMA33AT3G
1SMA36AT3G
1SMA40AT3G
1SMA43AT3G
1SMA45AT3G
1SMA48AT3G
1SMA54AT3G
1SMA58AT3G
1SMA70AT3G
1SMA75AT3G
Device
Marking
QE
QG
QK
QR
QT
QV
QX
QZ
RE
RG
RH
RM
RP
RR
RT
RV
RX
RZ
SE
SG
SK
SM
SP
SR
ST
SV
SX
TE
TG
TP
TR
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias voltage = 0 V, F = 1.0 MHz, T
J
= 25C.
†Please see 1SMA10CAT3 to 1SMA75CAT3 for Bidirectional devices.
* Include SZ-prefix devices where applicable.
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3
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series
RATING AND TYPICAL CHARACTERISTIC CURVES
100
Ippm, PEAK PULSE CURRENT (%)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2.
T
A
= 25C
120
10
ms
100
80
60
40
20
0
0.001
0.01
0.1
t
P
, PULSE WIDTH (ms)
1
10
PEAK VALUE
I
ppm
T
A
= 25C
PW (I
D
) IS DEFINED AS THE
POINT WHERE THE PEAK CURRENT
DECAYS TO 50% OF I
pp
.
Ppk , PEAK POWER (kW)
10
HALF VALUE - I
pp
/2
10/1000
ms
WAVEFORM
AS DEFINED BY R.E.A.
t
d
0
1
2
3
t, TIME (ms)
4
5
1
0.1
10
-4
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
120
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
100
80
60
40
20
0
10 x 1000 WAVEFORM
AS DEFINED BY R.E.A.
10,000
1SMA5.0AT3G
C, CAPACITANCE (pF)
1,000
1SMA10AT3G
1SMA36AT3G
100
1SMA64AT3G
10
T
J
= 25C
F = 1 MHz
1
0
40
80
120
160
T
A
, AMBIENT TEMPERATURE (C)
200
1
10
BIAS VOLTAGE (VOLTS)
100
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
PD , MAXIMUM POWER DISSIPATION (WATTS)
6
5
4
3
2
1
0
0
25
50
100
75
T, TEMPERATURE (C)
125
150
@ T
A
= 25C
P
D
= 0.5 W
@ T
L
= 75C
P
D
= 1.5 W
Figure 5. Steady State Power Derating
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4
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE F
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.15
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
A1
L
c
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a registered trademark of Semiconductor Components Industries, LLC.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
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800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
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5
1SMA5.0AT3/D
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