SiT9365
Standard Frequency Ultra-low Jitter Differential Oscillator
Features
Applications
32 standard frequencies from 25 MHz to 325 MHz. For additional
frequencies below from 1 to 220.00000 MHz, refer to
SiT9366
datasheet. For frequencies from 220.000001 to 725 MHz, refer to
SiT9367
datasheet.
LVPECL, LVDS and HCSL output signaling
0.1 ps RMS phase jitter (random) for Ethernet applications
Contact
SiTime
for ±10 ppm frequency stability
Wide temperature ranges from -40°C to 105°C
Industry-standard packages: 3.2 x 2.5 mm, 7.0 x 5.0 mm
and 5.0 x 3.2 mm package
10/40/100 Gbps Ethernet, SONET, SATA, SAS,
Fibre Channel
Telecom, networking, instrumentation, storage, servers
Electrical Characteristics
All Min and Max limits in the Electrical Characteristics tables are specified over temperature and rated operating voltage with standard
output termination shown in the termination diagrams. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics – Common to LVPECL, LVDS and HCSL
(All temperature ranges)
Parameter
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
MHz
Condition
Frequency Range
32 standard frequencies between
25 MHz and 325.000000 MHz
-10
-20
-25
-50
First Year Aging
Operating Temperature Range
F_1y
T_use
–
-20
-40
-40
-40
Supply Voltage
Vdd
2.97
2.70
2.52
2.25
Input Voltage High
Input Voltage Low
Input Pull-up Impedance
Duty Cycle
Startup Time
OE Enable/Disable Time
VIH
VIL
Z_in
DC
T_start
T_oe
70%
–
–
45
–
–
–
–
–
–
±1
–
–
–
–
3.30
3.00
2.80
2.50
–
–
100
–
–
–
+10
+20
+25
+50
–
+70
+85
+95
+105
Supply Voltage
3.63
3.30
3.08
2.75
V
V
V
V
Pin 1, OE
Pin 1, OE
Pin 1, OE logic high or logic low
Frequency Stability
Frequency Stability
F_stab
ppm
ppm
ppm
ppm
ppm
°C
°C
°C
°C
Extended Industrial
At 25°C
Extended Commercial
Industrial
Inclusive of initial tolerance, operating temperature, rated power
supply voltage and load variations. Contact
SiTime
for ±10 ppm.
Inclusive of initial tolerance, operating temperature, rated power
supply voltage and load variations.
Temperature Range
Input Characteristics
–
Vdd
30%
–
55
3.0
3.8
Vdd
kΩ
%
ms
µs
Output Characteristics
Startup and OE Timing
Measured from the time Vdd reaches its rated minimum value.
f = 156.25 MHz. Measured from the time OE pin reaches rated
VIH and VIL to the time clock pins reach 90% of swing and
high-Z. See
Figure 6
and
Figure 7.
Rev 1.05
July 3, 2018
www.sitime.com
SiT9365
Standard Frequency Ultra-low Jitter Differential Oscillator
Table 2. Electrical Characteristics – LVPECL
Parameter
Current Consumption
OE Disable Supply Current
Output Disable Leakage Current
Maximum Output Current
Output High Voltage
Output Low Voltage
Output Differential Voltage Swing
Rise/Fall Time
RMS Period Jitter
[1]
Symbol
Idd
I_OE
I_leak
I_driver
VOH
VOL
V_Swing
Tr, Tf
T_jitt
T_phj
Min.
–
–
–
–
Typ.
–
–
0.15
–
–
–
1.6
225
1.0
0.225
Max.
89
58
–
30
Vdd-0.7
Vdd-1.5
2.0
290
1.6
0.270
Unit
mA
mA
A
mA
V
V
V
ps
ps
ps
Condition
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE = Low
OE = Low
Maximum average current drawn from OUT+ or OUT-
See
Figure 2
See
Figure 2
See
Figure 3
20% to 80%. See
Figure 3
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -20 to 70ºC
and -40 to 85ºC
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -40 to 95ºC
and -40 to 105ºC
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE jitter
mask integration bandwidth = 1.875 MHz to 20 MHz, includes
spurs, all Vdd levels.
Current Consumption
Output Characteristics
Vdd-1.1
Vdd-1.9
1.2
–
–
–
Jitter – 7.0 x 5.0 mm Package
RMS Phase Jitter (random)
–
0.225
0.300
ps
–
0.1
–
ps
RMS Period Jitter
[1]
T_jitt
Jitter – 5.0 x 3.2 mm and 3.2 x 2.5 mm Packages
–
1.0
1.6
ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V
–
0.225
0.275
ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -20 to 70ºC
and -40 to 85ºC
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -40 to 95ºC
and -40 to 105ºC
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE jitter
mask integration bandwidth = 1.875 MHz to 20 MHz, includes
spurs, all Vdd levels.
RMS Phase Jitter (random)
–
0.225
0.340
ps
–
0.1
–
ps
Notes:
1. Measured according to JESD65B.
Rev 1.05
Page 2 of 15
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SiT9365
Standard Frequency Ultra-low Jitter Differential Oscillator
Table 3. Electrical Characteristics – LVDS
Parameter
Current Consumption
OE Disable Supply Current
Output Disable Leakage Current
Differential Output Voltage
VOD Magnitude Change
Offset Voltage
VOS Magnitude Change
Rise/Fall Time
Symbol
Idd
I_OE
I_leak
VOD
ΔVOD
VOS
ΔVOS
Tr, Tf
Min.
–
–
–
Typ.
–
–
0.15
–
–
–
–
400
Max.
79
58
–
450
50
1.375
50
470
Unit
mA
mA
A
mV
mV
V
mV
ps
Condition
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE = Low
OE = Low
See
Figure 4
See
Figure 4
See
Figure 4
See
Figure 4
Measured with 2 pF capacitive loading to GND, 20% to 80%.
See
Figure 5
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -20 to 70ºC
and -40 to 85ºC
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -40 to 95ºC
and -40 to 105ºC
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE jitter
mask integration bandwidth = 1.875 MHz to 20 MHz, includes
spurs, all Vdd levels.
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -20 to 70ºC
and -40 to 85ºC
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -40 to 95ºC
and -40 to 105ºC
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE jitter
mask integration bandwidth = 1.875 MHz to 20 MHz, includes
spurs, all Vdd levels.
Current Consumption
Output Characteristics
250
–
1.125
–
–
Jitter – 7.0 x 5.0 mm Package
RMS Period Jitter
[2]
T_jitt
T_phj
–
–
1.0
0.215
1.6
0.265
ps
ps
RMS Phase Jitter (random)
–
0.215
0.300
ps
–
0.1
–
ps
Jitter – 5.0 x 3.2 and 3.2 x 2.5 mm Packages
RMS Period Jitter
[1]
T_jitt
T_phj
–
–
1.0
0.235
1.6
0.275
ps
ps
RMS Phase Jitter (random)
–
0.235
0.320
ps
–
0.1
–
ps
Notes:
2. Measured according to JESD65B
Rev 1.05
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SiT9365
Standard Frequency Ultra-low Jitter Differential Oscillator
Table 4. Electrical Characteristics – HCSL
Parameter
Current Consumption
OE Disable Supply Current
Output Disable Leakage Current
Maximum Output Current
Output High Voltage
Output Low Voltage
Output Differential Voltage Swing
Rise/Fall Time
Symbol
Idd
I_OE
I_leak
I_driver
VOH
VOL
V_Swing
Tr, Tf
Min.
–
–
–
–
Typ.
Max.
Unit
Condition
Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE = Low
OE = Low
Maximum average current drawn from OUT+ or OUT-
See
Figure 2
See
Figure 2
See
Figure 3
Measured with 2 pF capacitive loading to GND, 20% to 80%.
See
Figure 3
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -20 to 70ºC
and -40 to 85ºC
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -40 to 95ºC
and -40 to 105ºC
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE jitter
mask integration bandwidth = 1.875 MHz to 20 MHz, includes
spurs, all Vdd levels.
Current Consumption
–
89
mA
–
0.15
–
–
–
1.4
360
58
–
35
0.90
0.08
1.80
465
mA
A
mA
V
V
V
ps
Output Characteristics
0.60
-0.05
1.2
–
Jitter – 7.0 x 5.0 mm Package
RMS Period Jitter
[3]
T_jitt
T_phj
–
–
1.0
0.220
1.6
0.270
ps
ps
RMS Phase Jitter (random)
–
0.220
0.300
ps
–
0.1
–
ps
RMS Period Jitter
[3]
T_jitt
T_phj
Jitter – 5.0 x 3.2 and 3.2 x 2.5 mm Packages
–
1.0
1.6
ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3V or 2.5V
–
0.230
0.275
ps
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -20 to 70ºC
and -40 to 85ºC
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz,
all Vdd levels, includes spurs. Temperature ranges -40 to 95ºC
and -40 to 105ºC
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE jitter
mask integration bandwidth = 1.875 MHz to 20 MHz, includes
spurs, all Vdd levels.
RMS Phase Jitter (random)
–
0.230
0.340
ps
–
0.1
–
ps
Notes:
3. Measured according to JESD65B
Table 5. Pin Description
Pin
Map
Output Enable
(OE)
1
OE/NC
Non Connect
(NC)
2
3
4
5
6
NC
GND
OUT+
OUT-
VDD
NA
Power
Output
Output
Power
[4]
Functionality
H : specified frequency output
L: output is high impedance
H or L or Open: No effect on output frequency or other device
functions
No Connect; Leave it floating or connect to GND for better
heat dissipation
VDD Power Supply Ground
Oscillator output
Complementary oscillator output
Power supply voltage
[5]
Top View
OE/NC
NC
GND
1
6
VDD
OUT-
OUT+
2
5
3
4
Figure 1. Pin Assignments
Notes:
4. In OE mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven.
5. A capacitor of value 0.1 µF or higher between Vdd and GND is required. An additional 10 µF capacitor
between Vdd and GND is required for the best phase jitter performance
Rev 1.05
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SiT9365
Standard Frequency Ultra-low Jitter Differential Oscillator
Table 6. Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifi cations, not at absolute maximum ratings.
Parameter
Vdd
VIH
VIL
Storage Temperature
Maximum Junction Temperature
Soldering Temperature (follow standard Pb-free soldering guidelines)
-0.3
-65
150
130
260
Min.
-0.5
Max.
4.0
Vdd + 0.3V
Unit
V
V
V
ºC
ºC
ºC
Table 7. Thermal Considerations
[6]
Package
3225, 6-pin
5032, 6-pin
7050, 6-pin
JA
, 4 Layer Board (°C/W)
80
TBD
52
JC
, Bottom (°C/W)
30
TBD
19
Notes:
6. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
Table 8. Maximum Operating Junction Temperature
[7]
Max Operating Temperature (ambient)
70°C
85°C
95°C
105°C
Maximum Operating Junction Temperature
95°C
110°C
120°C
130°C
Notes:
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 9. Environmental Compliance
Parameter
Mechanical Shock Resistance
Mechanical Vibration Resistance
Soldering Temperature (follow standard Pb free soldering guidelines)
Moisture Sensitivity Level
Electrostatic Discharge (HBM)
Charge-Device Model ESD Protection
Latch-up Tolerance
Test Conditions
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
MIL-STD-883F, Method 2003
MSL1 @ 260°C
HBM, JESD22-A114
JESD220C101
JESD78 Compliant
2,000
750
V
V
Value
10,000
70
260
Unit
g
g
°C
Rev 1.05
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