T1235H, T1250H
High temperature 12 A Snubberless™ Triacs
Features
■
■
■
■
■
■
A2
Medium current Triac
150 °C max. T
j
turn-off commutation
Low thermal resistance with clip bonding
Very high 3 quadrant commutation capability
Packages are RoHS (2002/95/EC) compliant
UL certified (ref. file E81734)
A1
A2
G
A2
A1
G
A2
G
A1
A2
Applications
Especially designed to operate in high power
density or universal motor applications such as
vacuum cleaner and washing machine drum
motor, these 12 A Triacs provide a very high
switching capability up to junction temperatures of
150 °C.
The heatsink can be reduced, compared to
traditional Triacs, according to the high
performance at given junction temperatures.
D PAK
T12xxH-6G
2
TO-220AB
T12xxH-6T
G
A2
A1
TO-220AB Insulated
T12xxH-6I
Description
Available in through-hole or surface mount
packages, the T1235H and T1250H Triac series
are suitable for general purpose mains power ac
switching.
By using an internal ceramic pad, the T12xxH-6I
provides voltage insulation (rated at 2500 V rms).
Table 1.
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Device summary
Value
12
600
35 or 50
Unit
A
V
mA
TM:
Snubberless is a trademark of STMicroelectronics
September 2011
Doc ID 13574 Rev 2
1/10
www.st.com
10
Characteristics
T1235H, T1250H
1
Table 2.
Symbol
I
T(RMS)
Characteristics
Absolute maximum ratings
Parameter
D
2
PAK, TO-220AB
On-state rms current (full sine wave)
TO-220AB Ins
Non repetitive surge peak on-state
current (full cycle, T
j
initial = 25 °C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
F = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
c
= 130 °C
T
c
= 120 °C
t = 20 ms
t = 16.7 ms
120
A
126
95
50
V
DRM
/V
RRM
+ 100
4
1
- 40 to + 150
- 40 to + 150
A
2
s
A/µs
V
A
W
°C
Value
12
Unit
A
I
TSM
I
²
t
dI/dt
V
DSM
/V
RSM
I
GM
P
G(AV)
T
stg
T
j
Table 3.
Symbol
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Value
Test conditions
Quadrant
T1235H T1250H
V
D
= 12 V, R
L
= 33
Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA
I - III
I
G
= 1.2 I
GT
V
D
= 67% V
DRM,
gate open, T
j
= 150 °C
Without snubber, T
j
= 150 °C
MAX.
II
MIN.
MIN.
80
1000
16
110
1500
21
V/µs
A/ms
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
35
50
35
1.0
0.15
75
90
mA
50
mA
V
V
mA
Unit
1. minimum I
GT
is guaranted at 20% of I
GT
max.
2. for both polarities of A2 referenced to A1.
2/10
Doc ID 13574 Rev 2
T1235H, T1250H
Table 4.
Symbol
V
T (1)
V
t0 (1)
R
d (1)
I
TM
= 17 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
I
DRM
I
RRM (2)
V
D
/V
R
= 400 V (at peak mains voltage)
V
D
/V
R
= 200 V (at peak mains voltage)
1. for both polarities of A2 referenced to A1
2. t
p
= 380 µs
Characteristics
Static characteristics
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
Value
1.5
0.80
30
5
3.9
3.2
2.7
mA
Unit
V
V
mΩ
µA
Table 5.
Symbol
R
th(j-c)
Thermal resistance
Parameter
D
2
PAK / TO-220AB
Junction to case (AC)
TO-220AB Ins
S = 1 cm
2
D
2
PAK
TO-220AB / TO-220AB Ins
Junction to ambient
60
3.3
°C/W
45
Value
1.4
Unit
R
th(j-a)
Doc ID 13574 Rev 2
3/10
Characteristics
T1235H, T1250H
Figure 1.
P(W)
14
α=180
°
Maximum power dissipation versus Figure 2.
on-state rms current (full cycle)
I
T(RMS)
(A)
14
On-state rms current versus case
temperature (full cycle)
TO-220AB/D²PAK
12
10
8
6
4
180°
12
10
8
6
4
2
I
T(RMS)
(A)
TO-220AB
Insulated
2
0
0
1
2
3
4
5
6
7
8
9
10
11
12
α=180
°
T
C
(°C)
0
0
25
50
75
100
125
150
Figure 3.
I
T(RMS)
(A)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
On-state rms current versus
ambient temperature
Epoxy printed circuit board FR4,
copper thickness = 35 µm
α=180
°
D²PAK
S
CU
=1 cm²
Figure 4.
1.0E+02
Variation of thermal impedance
versus pulse duration
Z
th(j-a)
Z
th
(°C/W)
1.0E+01
Z
th(j-c)
1.0E+00
T
amb
(°C)
50
75
100
125
150
t
P
(s)
1.0E-01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 5.
100
On-state characteristics
(maximum values)
Figure 6.
I
TSM
(A)
Surge peak on-state current versus
number of cycles
I
TM
(A)
130
120
110
100
T
j
=150 °C
90
80
T
j
=25 °C
Non repetitive
T
j
initial=25 °C
t=20ms
One cycle
10
70
60
50
40
T
j
max. :
V
t0
= 0.80 V
R
d
= 30 mΩ
Repetitive
T
c
=120 °C
30
20
10
0
4.0
V
TM
(V)
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Number of cycles
1
10
100
1000
4/10
Doc ID 13574 Rev 2
T1235H, T1250H
Characteristics
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse with
Relative variation of I
GT
,I
H
, I
L
vs
junction temperature
(typical values)
10000
I
TSM
(A), I²t (A²s)
Tj initial=25 °C
dI/dt limitation: 50 A/µs
I
GT
, I
H
, I
L
[T
j
] / I
GT
, I
H
, I
L
[T
j
=25°C]
2.5
2.0
1000
I
GT
1.5
I
TSM
I
H
& I
L
I²t
1.0
100
0.5
width t
p
< 10 ms and corresponding value of I t
10
0.01
0.10
1.00
2
t
P
(ms)
10.00
0.0
-40
-20
0
20
40
T
j
(°C)
60
80
100
120
140
160
Figure 9.
Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
typical values
Figure 10. Relative variation of critical rate of
decrease of main current versus
junction temperature
(dI/dt)
c
[T
j
] / (dI/dt)
c
[T
j
=150°C]
8
7
6
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
(dI/dt)
c
[ (dV/dt)
c
] / Specified (dI/dt)
c
5
4
3
2
0.4
0.2
0.0
0.1
1.0
(dV/dt)
C
(V/µs)
10.0
100.0
1
0
25
50
75
T
j
(°C)
100
125
150
Figure 11. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
1.E+04
Figure 12. Variation of thermal resistance
junction to ambient versus copper
surface under tab
R
th(j-a)
(°C/W)
80
I
DRM
/I
RRM
(µA)
1.E+03
V
DRM
=V
RRM
=400 V
V
DRM
=V
RRM
=600 V
70
60
Epoxy printed circuit board FR4,
copper thickness = 35 µm
D²PAK
1.E+02
V
DRM
=V
RRM
=200 V
50
40
30
20
10
T
j
(°C)
1.E+01
1.E+00
1.E-01
50
75
100
125
150
S
CU
(cm²)
0
0
5
10
15
20
25
30
35
40
Doc ID 13574 Rev 2
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