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T2525S030C-DDW

Telecom Circuit, 1-Func

器件类别:无线/射频/通信    电信电路   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
厂商名称
Microchip(微芯科技)
包装说明
WAFER-10
Reach Compliance Code
compliant
JESD-30 代码
R-XUUC-N10
功能数量
1
端子数量
10
最高工作温度
85 °C
最低工作温度
-25 °C
封装主体材料
UNSPECIFIED
封装代码
DIE
封装等效代码
DIE OR CHIP
封装形状
RECTANGULAR
封装形式
UNCASED CHIP
电源
5 V
认证状态
Not Qualified
标称供电电压
5 V
表面贴装
YES
电信集成电路类型
TELECOM CIRCUIT
温度等级
OTHER
端子形式
NO LEAD
端子位置
UPPER
文档预览
T2525
IR Receiver ASSP
DATASHEET
Features
No external components except PIN diode
Supply-voltage range: 4.5V to 5.5V
Highest sensitivity due to automatic sensitivity adaption (AGC) and automatic
strong signal adaption (ATC)
Highest immunity against disturbances from daylight and lamps
Available for carrier frequencies between 30kHz to 56kHz; adjusted by zener diode
fusing
TTL and CMOS compatible
Suitable minimum burst length
10 pulses/burst
Applications
Home entertainment applications (audio/video)
Home appliances
Remote control equipment
4657I-AUTO-04/14
1.
Description
The Atmel
®
IC T2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-
frequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise
from daylight and lamps. The T2525 is available with broadest range of carrier frequencies (30, 33, 36, 37, 38, 40, 44,
56kHz) and 3 different noise suppression regulation types (standard, lamp, short burst) covering requirements of high-end
remote control solutions (please refer to selection guide available for T2525/T2526). The T2525 operates in a supply voltage
range of 4.5V to 5.5V.
The function of T2525 can be described using the block diagram (see
Figure 1-1 on page 2).
The input stage meets two
main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are
transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a
Controlled Gain Amplifier
(CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency
f
0
which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst
signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be
suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to
adapt to the current application to secure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
Input
CGA and
filter
OUT
Demodulator
Micro-
controller
Oscillator
Carrier frequency f
0
AGC/ATC
and digital control
T2525
Modulated IR signal
min 6 or 10 pulses
GND
2.
Pin Description
Table 2-1.
Pin Description
Symbol
VS
OUT
IN
GND
Function
Supply voltage
Data output
Input PIN diode
Ground
2
T2525 [DATASHEET]
4657I–AUTO–04/14
3.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Supply voltage
Supply current
Input voltage
Input DC current at V
S
= 5V
Output voltage
Output current
Operating temperature
Storage temperature
Power dissipation at T
amb
= 25°C
Symbol
V
S
I
S
V
IN
I
IN
V
O
I
O
T
amb
T
stg
P
tot
Value
–0.3 to +6
3
–0.3 to V
S
0.75
–0.3 to V
S
10
–25 to +85
–40 to +125
30
Unit
V
mA
V
mA
V
mA
°C
°C
mW
4.
No.
1
1.1
1.2
2
2.1
2.2
2.3
2.4
3
3.1
3.2
Electrical Characteristics
Parameters
Supply
Supply-voltage range
Supply current
Output
Internal pull-up resistor
(1)
Output voltage low
Output voltage high
Output current clamping
Input
Input DC current
Input DC current;
Figure
5-2 on page 5
V
IN
= 0;
see
Figure 5-7 on page 7
V
IN
= 0; V
s
= 5V,
T
amb
= 25°C
I
IN_DCMAX
I
IN_DCMAX
–85
–530
–960
µA
µA
C
B
R
2
= 0;
see
Figure 5-7 on page 7
T
amb
= 25°C;
see
Figure 5-7 on page 7
I
L
= 2mA;
see
Figure 5-7 on page 7
R
PU
V
OL
V
OH
I
OCL
V
S
– 0.25
8
30/40
250
Vs
k
mV
V
mA
A
B
B
B
I
IN
= 0
V
S
I
S
4.5
0.8
5
1.1
5.5
1.4
V
mA
C
B
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
T
amb
= 25°C, V
S
= 5V unless otherwise specified.
3.3
Test signal:
see
Figure 5-6 on page 7
V
S
= 5V,
T
amb
= 25°C,
Minimum detection
I
= 1µA;
threshold current;
Figure
IN_DC
square pp,
5-1 on page 5
burst N = 16,
f = f
0
; t
PER
= 10ms,
Figure 5-6 on page 7;
BER = 50
(2)
1. Depending on version, see “Ordering Information”
I
Eemin
–500
pA
B
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
T2525 [DATASHEET]
4657I–AUTO–04/14
3
4.
No.
Electrical Characteristics (Continued)
Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
T
amb
= 25°C, V
S
= 5V unless otherwise specified.
Test signal:
see
Figure 5-6 on page 7
V
S
= 5V,
Minimum detection
T = 25°C,
threshold current with AC
amb
I
IN_DC
= 1µA,
current disturbance
square pp,
IIN_AC100 = 3µA at
burst N = 16,
100Hz
f = f
0
; t
PER
= 10ms,
Figure
5-6 on page 7;
BER = 50%
(2)
Test signal:
see
Figure 5-6 on page 7
V
S
= 5V, T
amb
= 25°C,
I
IN_DC
= 1µA;
square pp,
burst N = 16,
f = f
0
; t
PER
= 10ms,
Figure
5-6 on page 7;
BER = 5%
(2)
3.4
I
Eemin
–750
pA
C
3.5
Maximum detection
threshold current with V
IN
> 0V
I
Eemax
–400
µA
D
4
4.1
4.2
4.3
4.4
4.5
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
Minimum value of
variable gain (CGA)
Total internal
amplification
(3)
Center frequency fusing
accuracy of bandpass
Overall accuracy center
frequency of bandpass
BPF bandwidth:
type N0 - N3
BPF bandwidth:
type N6, N7
–3 dB; f
0
= 38kHz; see
Figure 5-4 on page 6
–3 dB; f
0
= 38kHz
Figure 5-4 on page 6
V
S
= 5V, T
amb
= 25°C
G
VARMAX
G
VARMIN
G
MAX
f
0_FUSE
f
0
B
B
–3
–6.7
51
–5
71
f
0
f
0
3.5
5.4
+3
+4.1
dB
dB
dB
%
%
kHz
kHz
D
D
D
A
C
C
C
4.6
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. Depending on version, see “Ordering Information”
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
4.1
ESD
All pins
2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
4.2
Reliability
Electrical qualification (1000h) in molded SO8 plastic package
4
T2525 [DATASHEET]
4657I–AUTO–04/14
5.
Typical Electrical Curves at T
amb
= 25°C
Figure 5-1. I
Eemin
versus I
IN_DC
, V
S
= 5V
100
I
Eemin
(nA)
10
1
0.52
0
0.1
0.96
1.0
10.0
100.0
1000.0
I
IN_DC
(µA)
Figure 5-2. V
IN
versus I
IN_DC
, V
S
= 5V
3
2.94
2.79
2.44
2
V
IN
(V)
1
1.14
0
0.0
0.1
1.0
10.0
100.0
1000.0
I
IN_DC
(µA)
Figure 5-3. Data Transmission Rate, V
S
= 5V
50 0 0
4000
Short burst type
Bits/s
3000
Standard type
2000
Lamp type
10 0 0
0
25
35
45
55
65
f
0
(kHZ)
T2525 [DATASHEET]
4657I–AUTO–04/14
5
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