Features
•
No External Components Except PIN Diode
•
Supply-voltage Range: 2.7 V to 3.6 V
•
Available for Carrier Frequencies in the Range of 30 kHz to 56 kHz;
•
•
•
•
•
•
•
Adjusted by Zener-diode Fusing
Enhanced Bandpass Filter Accuracy of ±1.25%
ESD: 4 kV HBM, 400 V MM
Automatic Sensitivity Adaptation (AGC)
Automatic Strong Signal Adaptation (ATC)
Enhanced Immunity against Ambient Light Disturbances
TTL and CMOS Compatible
Suitable Minimum Burst Length
≥
6 or 10 pulses
Applications
•
Audio/Video Applications
•
Home Appliances
•
Remote Control Equipment
Low-voltage
Highly Selective
IR Receiver IC
T2527
Description
The fully integrated IR receiver IC T2527 is designed to be used in all kinds of unidi-
rectional infrared data transmission systems. It is especially optimized for carrier-
frequency modulated transmission applications. Several built-in features enable best
transmission quality.
The input stage has two functions: first to provide the bias voltage for the PIN diode
and secondly to transform the photo current signal into a voltage for further internal
processing. This is carried out by a special circuit that is optimized for low-noise appli-
cations due to the fact that the incoming current signal is as small as 700 pA. This
voltage signal is amplified by a so-called Controlled Gain Amplifier (CGA) followed by
a bandpass filter. The filter frequency and therefore the operating carrier frequency
are defined by a narrow-tuned bandpass filter. The enhanced bandpass filter tunes
the input signal very accurately with a tolerance of ±1.25%.
The input burst signal is demodulated and converted into a digital envelope output
pulse. An integrated dynamic feedback circuit block (which varies the gain as a func-
tion of the present environmental conditions such as ambient light, modulated lamps
etc.) makes sure that the signal information is evaluated and that unwanted pulses are
suppressed at the output pin.
The operating supply voltage range for the T2527 is 2.7 V to 3.6 V.
Rev. 4600B–IRDC–12/02
1
Figure 1.
Block Diagram
VS
IN
Input
CGA
& filter
Demo-
dulator
OUT
mC
Oscillator
Carrier frequency f
0
AGC / ATC
& digital control
T2527
Modulated IR signal
min 6 or 10 pulses
GND
Pad Layout
Figure 2.
Pad Layout 1 (DDW Only)
GND
IN
OUT
T2527
VS
FUSING
Figure 3.
Pad Layout 2 (DDW, SO8 or TSSOP8)
(6)
(1)
VS
T2527
GND
(5)
IN
(3) OUT
FUSING
2
T2527
4600B–IRDC–12/02
T2527
Pin Configuration
Figure 4.
Pinning SO8 and TSSOP8
VS
n.c.
OUT
n.c.
1
2
3
4
8
7
6
5
n.c.
n.c.
GND
IN
Pin Description
Pin
1
2
3
4
5
6
7
8
Symbol
VS
n.c.
OUT
n.c.
IN
GND
n.c.
n.c.
Function
Supply voltage
Not connected
Data output
Not connected
Input PIN diode
Ground
Not connected
Not connected
Absolute Maximum Ratings
Parameters
Supply voltage
Supply current
Input voltage
Input DC current at V
S
= 3 V
Output voltage
Output current
Operating temperature
Storage temperature
Power dissipation at T
amb
= 25°C
Symbol
V
S
I
S
V
IN
I
IN
V
O
I
O
T
amb
T
stg
P
tot
Value
-0.3 to +4.0
2.0
-0.3 to V
S
0.4
-0.3 to V
S
10
-25 to +85
-40 to +125
20
Unit
V
mA
V
mA
V
mA
°C
°C
mW
Thermal Resistance
Parameters
Junction ambient SO8
Junction ambient TSSOP8
Symbol
R
thJA
R
thJA
Value
130
TBD
Unit
K/W
K/W
3
4600B–IRDC–12/02
Electrical Characteristics
T
amb
= -20°C to +70°C, V
S
= 2.7 V to 3.6
V unless otherwise specified.
No.
1
1.1
1.2
2
2.1
2.2
2.3
2.4
3
3.1
3.2
3.3
Parameters
Supply
Supply-voltage range
Supply current
Output
Internal pull-up
resistor
(1)
Output voltage low
Output voltage high
Output current
clamping
Input
Input DC current
Input DC current; see
Figure 6
Min. detection
threshold current; see
Figure 5
Min. detection
threshold current with
AC current
disturbance
IIN_AC100 = 3
µA
at
100 Hz
Max. detection
threshold current with
V
IN
> 0V
V
IN
= 0; see Figure 12
V
IN
= 0; V
S
= 3 V,
T
amb
= 25°C
Test signal:
see Figure 11
V
S
= 3 V,
T
amb
= 25°C,
I
IN_DC
= 1 µA;
square pp,
burst N = 16,
f = f
0
; t
PER
= 10 ms,
Figure 10;
BER = 50
(2)
Test signal:
see Figure 11
V
S
= 3 V, T
amb
= 25°C,
I
IN_DC
= 1 µA;
square pp,
burst N = 16,
f = f
0
; t
PER
= 10 ms,
figure 10;
BER = 5%
(2)
5
5
3
I
IN_DCMAX
I
IN_DCMAX
I
Eemin
-150
-350
-700
µA
µA
pA
C
B
B
R
2
= 0; see Figure 12
T
amb
= 25°C;
see Figure 12
R
2
= 2.4 kW;
see Figure 12
1, 3
3, 6
3, 1
3, 6
R
PU
V
OL
V
OH
I
OCL
V
S
-
0.25
8
30/40
250
Vs
kW
mV
V
mA
A
B
B
B
I
IN
= 0
1
1
V
S
I
S
2.7
0.7
3.0
0.9
3.6
1.2
V
mA
C
B
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
3.4
3
I
Eemin
-1500
pA
C
3.5
3
I
Eemax
-200
µA
D
4
4.1
4.2
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
Minimum value of
variable gain (CGA)
G
VARMAX
G
VARMIN
51
-5
dB
dB
D
D
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”.
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input Pin 19 to Pin 21 pulses can appear at the
Pin OUT.
3. After transformation of input current into voltage.
4
T2527
4600B–IRDC–12/02
T2527
Electrical Characteristics (Continued)
T
amb
= -20°C to +70°C, V
S
= 2.7 V to 3.6
V unless otherwise specified.
No.
4.3
4.4
Parameters
Total internal
amplification
(3)
Center frequency
fusing accuracy of
bandpass
Overall accuracy
center frequency of
bandpass
BPF bandwidth
V
S
= 3 V, T
amb
= 25°C
f
03V
See Figure 7
-3 dB; f
0
= 38 kHz;
see Figure 9
B
3.8
kHz
C
-3.5
f
0
+2.0
%
C
Test Conditions
Pin
Symbol
G
MAX
f
03V_FUSE
-1.25
Min.
Typ.
71
f
0
+1.25
Max.
Unit
dB
%
Type*
D
A
4.5
4.6
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”.
2. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input Pin 19 to Pin 21 pulses can appear at the
Pin OUT.
3. After transformation of input current into voltage.
ESD
All pins: 2000 V HBM; 200 V MM, MIL-STD-883C, Method 3015.7
Typical Electrical Curves at T
amb
= 25°C
Figure 5.
I
Eemin
versus I
IN_DC
, V
S
= 3 V
100.0
V
S
= 3 V
f = f
0
I
Eemin
( nA )
10.0
1.0
0.1
0.1
1.0
10.0
100.0
1000.0
I
IN_DC
( µA )
5
4600B–IRDC–12/02
