T330P
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: chip
• Package form: single chip
• Dimensions (L x W x H in mm): 0.67 x 0.67 x 0.28
• Wafer diameter (in mm): 100
• Radiant sensitive area (in mm
2
): 0.23
• Peak sensitivity wavelength: 900 nm
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible light and near infrared radiation
• Fast response times
• Angle of half sensitivity:
ϕ
= ± 60°
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
T330P chip is a PIN photodiode with 0.23 mm
2
sensitive
area, high speed and high photo sensitivity. It is sensitive to
the visible and near infrared light spectrum with a peak
sensitivity at 900 nm. Anode is the bond pad on top,
cathode is the backside contact.
APPLICATIONS
• High speed photo detector
GENERAL INFORMATION
The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is
provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used
conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures
and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in
this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore
sold die may not perform on an equivalent basis to standard package products.
PRODUCT SUMMARY
COMPONENT
T330P
I
ra
(μA)
2.3
ϕ
(deg)
± 60
λ
0.1
(nm)
430 to 1100
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
T330P-SD-F
Note
• MOQ: minimum order quantity
PACKAGING
Wafer sawn on foil with disco frame
REMARKS
MOQ: 55 000 pcs
PACKAGE FORM
Chip
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Junction temperature
Operating temperature range
Storage temperature range
Storage temperature range on foil
TEST CONDITION
SYMBOL
V
R
T
j
T
amb
T
stg1
T
stg2
VALUE
60
100
- 40 to + 100
- 40 to + 100
- 40 to + 50
UNIT
V
°C
°C
°C
°C
Rev. 1.0, 16-Jan-12
Document Number: 83490
1
For technical questions, contact:
optochipsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T330P
www.vishay.com
Vishay Semiconductors
TEST CONDITION
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
E
V
= 100 lx, CIE illuminant A,
V
R
= 5 V
SYMBOL
V
(BR)
I
ro
C
D
I
ra
ϕ
λ
p
λ
0.1
V
R
= 10 V, R
L
= 50
Ω,
λ
= 820 nm
V
R
= 10 V, R
L
= 50
Ω,
λ
= 820 nm
t
r
t
f
MIN.
60
0.1
1.3
2.3
± 60
900
430 to 1100
4
4
3
TYP.
MAX.
UNIT
V
nA
pF
μA
deg
nm
nm
ns
ns
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
Notes
• The measurements are based on samples of die which are mounted on a TO-header without resin coating
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
8
S(λ)
rel
- Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
C
D
- Diode Capacitance (pF)
6
E=0
f = 1 MHz
4
2
0
0.1
94 8430
1
10
100
94 8420
350
550
750
950
1150
V
R
- Reverse Voltage (V)
λ
- Wavelength (nm)
Fig. 1 - Diode Capacitance vs. Reverse Voltage
Fig. 2 - Relative Spectral Sensitivity vs. Wavelength
MECHANICAL DIMENSIONS
PARAMETER
Length of chip edge (x-direction)
Length of chip edge (y-direction)
Sensitive area
Wafer diameter
Die height
Bond pad anode
SYMBOL
L
x
L
y
A
S
D
H
x*y
0.265
MIN.
TYP.
0.67
0.67
0.23
100
0.28
0.1 x 0.1
0.295
MAX.
UNIT
mm
mm
mm
2
mm
mm
mm
2
Rev. 1.0, 16-Jan-12
Document Number: 83490
2
For technical questions, contact:
optochipsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T330P
www.vishay.com
Vishay Semiconductors
AlSi
NiV-Ag
Sawing
Epoxy bonding
ADDITIONAL INFORMATION
Frontside metallization, anode
Backside metallization, cathode
Dicing
Die bonding technology
Note
• All chips are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.
The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of chip
backside is performed with stereo microscope with incident light and 40x to 80x magnification.
The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure
by QM is not installed.
HANDLING AND STORAGE CONDITIONS
• The hermetically sealed shipment lots shall be opened in temperature and moisture controlled cleanroom environment only.
It is mandatory to follow the rules for disposition of material that can be hazardous for humans and environment.
• Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work environments are as
defined in MIL-HDBK-263.
• Singulated die are not to be handled with tweezers. A vacuum wand with non metallic ESD protected tip should be used.
PACKING
Chips are fixed on adhesive foil. Upon request the foils can be mounted on plastic frame or disco frame. For shipment, the
wafers are arranged to stacks and hermetically sealed in plastic bags to ensure protection against environmental influence
(humidity and contamination).
Use for recycling reliable operators only. We can help getting in touch with your nearest sales office. By agreement we will take
back packing material, if it is sorted. You will have to bear the costs of transport. We will invoice you for any costs incurred for
packing material that is returned unsorted or which we are not obliged to accept.
Rev. 1.0, 16-Jan-12
Document Number: 83490
3
For technical questions, contact:
optochipsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000