®
T4 Series
4A TRIAC
S
SNUBBERLESS™ & LOGIC LEVEL
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GTT (Q
1
)
Value
4
600 to 800
5 to 35
Unit
A
V
A2
G
A2
A1
A2
mA
A1
A2
G
A1
A2
G
DESCRIPTION
Based on ST’s Snubberless / Logic level technolo-
gy providing high commutation performances, the
T4 series is suitable for use on AC inductive loads.
They are recommended for applications using
universal motors, electrovalves.... such as kitchen
aid equipments, power tools, dishwashers,...
Available in a fully insulated package, the
T4...-...W version complies with UL standards (ref.
E81734).
DPAK
(T4-B)
IPAK
(T4-H)
A2
A1
A2
G
A1
A2
G
TO-220AB
(T4-T)
ISOWATT 220AB
(T4-W)
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
Parameter
RMS on-state current (full sine wave)
DPAK / IPAK
TO-220AB
ISOWATT 220AB
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
Tc = 110°C
4
Tc = 105°C
t = 20 ms
t = 16.7 ms
30
31
5.1
Tj = 125°C
Tj = 125°C
Tj = 125°C
50
4
1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
A
W
°C
A
Value
Unit
A
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
tp = 10 ms
F = 120 Hz
tp = 20 µs
June 2003 - Ed: 5
1/8
T4 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
T405
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
R
L
= 30
Ω
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
I - III
II
V
D
= 67 %V
DRM
gate open Tj = 125°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
(dV/dt)c = 10 V/µs
Without snubber
MIN.
MIN.
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
MAX.
10
10
15
20
1.8
0.9
-
5
T4
T410
10
1.3
0.2
15
25
30
40
2.7
2.0
-
35
50
60
400
-
-
2.5
V/µs
A/ms
T435
35
mA
V
V
mA
mA
Unit
V
D
= V
DRM
R
L
= 33 kΩ
Tj = 125°C
I
T
= 100 mA
I
G
= 1.2 I
GT
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 5.5 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.6
0.9
120
5
1
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
THERMAL RESISTANCES
Symbol
R
th(j-c)
Junction to case (AC)
Parameter
DPAK
IPAK
TO-220AB
ISOWATT220AB
R
th(j-a)
Junction to ambient
S = 0.5 cm
²
DPAK
TO-220AB
ISOWATT220AB
IPAK
S = Copper surface under tab
Value
2.6
4.0
70
60
100
Unit
°C/W
°C/W
2/8
T
T4 Series
PRODUCT SELECTOR
Part Number
T405-xxxB
T405-xxxH
T405-xxxT
T405-xxxW
T410-xxxB
T410-xxxH
T410-xxxT
T410-xxxW
T435-xxxB
T435-xxxH
T435-xxxT
T435-xxxW
X
X
X
X
X
X
X
X
X
X
X
X
Voltage (xxx)
600 V
700 V
X
X
X
X
X
X
X
X
X
X
X
X
800 V
X
X
X
X
X
X
X
X
X
X
X
X
5 mA
5 mA
5 mA
5 mA
10 mA
10 mA
10 mA
10 mA
35 mA
35 mA
35 mA
35 mA
Logic level
Logic level
Logic level
Logic level
Logic level
Logic level
Logic level
Logic level
Snubberless
Snubberless
Snubberless
Snubberless
DPAK
IPAK
TO-220AB
ISOWATT220AB
DPAK
IPAK
TO-220AB
ISOWATT220AB
DPAK
IPAK
TO-220AB
ISOWATT220AB
Sensitivity
Type
Package
ORDERING INFORMATION
T
TRIAC
SERIES
CURRENT: 4A
4
05
-
600
B
(-TR)
SENSITIVITY:
05: 05mA
10: 10mA
35: 35mA
VOLTAGE:
600: 600V
700: 700V
800: 800V
PACKING MODE:
Blank: Tube
-TR: DPAK Tape & Reel
PACKAGE:
B: DPAK
H: IPAK
T: TO-220AB
W: ISOWATT220AB
OTHER INFORMATION
Part Number
T4xx-yyyB
T4xx-yyyB-TR
T4xx-yyyH
T4xx-yyyT
T4xx-yyyW
Note:
xx = sensitivity, yyy = voltage
Marking
T4xxyyyB
T4xxyyyB
T4xxyyy
T4xxyyyT
T4xxyyyW
Weight
0.3 g
0.3 g
0.4 g
2.3 g
2.1 g
Base
quantity
75
2500
75
50
50
Packing
mode
Tube
Tape & reel
Tube
Tube
Tube
3/8
T4 Series
Fig. 1:
Maximum power dissipation versus RMS
on-state current (full cycle).
P(W)
6
5
4
3
2
1
0
0.0
0.5
1.0
Fig. 2-1:
RMS on-state current case versus tem-
perature (full cycle).
IT(RMS)(A)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TO-220AB/DPAK/IPAK
ISOWATT220AB
IT(RMS)(A)
1.5
2.0
2.5
3.0
3.5
4.0
Tc(°C)
0
25
50
75
100
125
Fig. 2-2:
RMS on-state current versus ambient
temperature (printed circuit FR4, copper thick-
ness: 35µm),full cycle.
IT(RMS)(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
DPAK
(S=0.5cm²)
Fig. 3:
Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
Rth(j-c)
ISOWATT220AB
TO-220AB/DPAK/IPAK
Rth(j-a)
1E-1
DPAK/IPAK
TO-220AB/ISOWATT220AB
Tamb(°C)
0
25
50
75
100
125
1E-2
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
1.5
IH & IL
IGT
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM(A)
35
30
25
20
15
10
Repetitive
Tc=110°C
Non repetitive
Tj initial=25°C
t=20ms
One cycle
1.0
0.5
Tj(°C)
5
Number of cycles
0.0
-40
-20
0
20
40
60
80
100
120
140
0
1
10
100
1000
4/8
T4 Series
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
500
Tj initial=25°C
dI/dt limitation:
50A/µs
ITSM
Fig. 7:
values).
On-state
characteristics
(maximum
ITM(A)
30.0
10.0
Tj=Tj max.
100
10
tp (ms)
1
0.01
0.10
1.00
1.0
I²t
VTM(V)
10.00
Tj max.:
Vto= 0.90 V
Rd= 120 mΩ
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 8:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
T435
3
2
1
Tj(°C)
100.0
T410
T405
(dV/dt)c (V/µs)
1.0
10.0
0
0
25
50
75
100
125
Fig. 10:
DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
90
80
70
60
50
40
30
20
10
0
DPAK
S(cm²)
0
4
8
12
16
20
24
28
32
36
40
5/8
