TA4019F
TOSHIBA Bipolar Linear Integrated Circuit
Silicon Monolithic
TA4019F
UHF Wide Band Amplifier Applications
Features
•
•
•
High gain: |S21|
2
= 30dB (@45 MHz)
Low distortion: IM3 = 53dB (@45 MHz)
Operating supply voltage: V
CC
= 4.75 V~5.25 V
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage
Total power dissipation
Operating temperature
Storage temperature
Symbol
V
CC
P
D
(Note 1)
T
opr
T
stg
Rating
5.5
550
−40~85
−55~150
Unit
V
mW
°C
°C
Weight:
0.02g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
Note 1: When mounted on the glass epoxy 2.5cm
×
0.4 t
Pin Assignment
V
CC
GND OUT OUT
(1) (2)
5
7
6
8
4019F
1
2
3
4
IN (1)IN (2) MGC MGC
(1) (2)
1
2007-11-01
TA4019F
Electrical Characteristics
(Ta
=
25°C, V
CC
=
5 V, Zg
=
Zl
=
50
Ω)
Characteristics
Circuit current
Band width
Input return loss
Insertion gain (1)
Insertion gain (2)
Isolation
Output return loss
Noise figure
3
rd
Symbol
Icc
BW
|S11|
2
2
2
Test
Circuit
Test Condition
Non carrier
Min
28
Typ.
35
300
−0.3
30
10.5
−57
−2.1
8
53
Max
42
⎯
⎯
33
13.5
⎯
⎯
11
⎯
Unit
mA
MHz
dB
dB
dB
dB
dB
dB
dB
Fig2
(Note 2)
f
=
45MHz
f
=
45MHz
200
⎯
27
7.5
⎯
⎯
⎯
47
|S21| (1)
|S21| (2)
|S12|
2
2
Fig1
f
=
45MHz
f
=
45MHz
f
=
45MHz
|S22|
NF
IM3
Fig2
f
=
45MHz
f1
=
45 MHz, f2
=
44 MHz,
Pin
= −35dBmW
order inter modulation
Note 2: BW is the frequency of 3dB down from |S21| at 45 MHz.
CAUTION: This device electrostatic sensitivity. Please handle with caution.
2
2
2007-11-01
TA4019F
1000 pF
1000 pF
1
2
3
4
IN1
IN2
MGC (1)
MGC (2)
V
CC
GND
OUT1
OUT2
8
100 pF
7
6
5
1000 pF
1000 pF
50
Ω
1000 pF 10000 pF
Figure 1
Measurement circuit (open)
1000 pF
1000 pF
1
2
3
4
IN1
IN2
MGC (1)
MGC (2)
V
CC
GND
OUT1
OUT2
8
100 pF
7
6
5
1000 pF
1000 pF
50
Ω
1000 pF 10000 pF
Figure 2
Measurement circuit (Short)
[8] V
CC
[6] OUT1
[5] OUT2
[1] IN1
[2] IN2
[7] GND
[3] MGC (1)
[4] MGC (2)
Figure 3
Equivalent circuit
3
2007-11-01
TA4019F
Measurement
Circuit：Open
S11
|S21|
2
-f
14
12
10
|S21| (dB)
8
6
4
2
0
0
200
400
600
800
1000
2
f (MHz)
|S12| -f
0
-10
-20
-30
2
S22
|S12|
2
(dB)
-40
-50
-60
-70
-80
-90
-100
0
200
400
600
800
1000
f (MHz)
Measurement
Circuit：Short
S11
|S21|
2
-f
35
30
25
|S21|
2
(dB)
20
15
10
5
0
0
200
400
600
800
1000
f (MHz)
|S12|
2
-f
0
-10
-20
-30
S22
|S12|
2
(dB)
-40
-50
-60
-70
-80
-90
-100
0
200
400
600
800
1000
f (MHz)
4
2007-11-01
TA4019F
Pin – Pout, IM3
10
0
−10
10
0
Pout
−10
Pout
Pin – Pout, IM3
Pout, IM3 (dBmW)
−20
−30
−40
−50
−60
VCC
=
5 V
f
=
44 MHz, 45 MHz
−70
Ta
=
25°C
−80
−45
Test circuit 1
−40
−35
−30
−25
−20
−15
−10
−5
IM3
Pout, IM3 (dBmW)
−20
−30
−40
−50
−60
−70
−80
−45
−40
−35
−30
−25
IM3
VCC
=
5 V
f
=
44 MHz, 45 MHz
Ta
=
25°C
Test circuit 2
−20
−15
−10
−5
Pin (dBmW)
Pin (dBmW)
NF-f
12
10
8
NF (dB)
6
4
2
0
0
200
400
600
800
1000
f (MHz)
Notice
The circuits and measurements contained in this document are given only in the context of as examples of
applications for these products.
Moreover, these example application circuits are not intended for mass production, since the high-frequency
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
It is the responsibility of the customer to design external circuits which correctly implement the intended
application, and to check the characteristics of the design.
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
5
2007-11-01
