TAT7427B
Applications
•
•
•
•
High Gain RF Amplifier, 75
Ω, 50-1200
MHz
Distribution Amplifiers
Multi Dwelling Units
Drop Amplifiers
Single Ended Gain Blocks
SOT-89 Package
Product Features
•
•
•
•
•
•
•
•
50-1200 MHz Bandwidth
High Gain : 18.5 dB
+38 dBm typical OIP3
2.5 dB typical NF
Low Distortion : CSO -70dBc, CTB -88dBc tested at
10dBmV/ch at input, 80 ch NTSC
pHEMT Device Technology
SOT-89 Package
Single +8V Supply
Functional Block Diagram
General Description
The TAT7427B is a high gain 75
Ω
RF Amplifier designed
for CATV applications from 50 to 1000 MHz (with
operation up to 1.25GHz). The balance of low noise and
distortion provides an ideal solution for drop and
distribution amplifiers. It is particularly well suited for
new home networks requiring higher gain for a large
number of splits.
The TAT7427B is fabricated using 6-inch GaAs pHEMT
technology to optimize performance and cost. It provides
excellent gain and return loss consistency inherent to the
pHEMT process.
Pin Configuration
Pin #
1
2, 4
3
Symbol
RF_ Input
Ground
RF_Output / V
dd
Ordering Information
Part No.
TAT7427B-T1
TAT7427B-T1-EB
Description
High Gain 75
Ω
RF Amplifier
(Lead free / RoHS compliant SOT-89 Pkg)
Drop Amplifier Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev A 05-15-11
© 2011 TriQuint Semiconductor, Inc.
-
1 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7427B
Specifications
High Gain RF Amplifier, 75
Ω, 50-1200
MHz
Absolute Maximum Ratings
Parameter
Storage Temperature
Recommended Operating Conditions
Parameter
o
Rating
-55 to 150 C
Min Typ Max Units
8
-20
85
150
V
C
o
C
o
Operation of this device outside the parameter ranges given
above may cause permanent damage.
V
dd
Operating Case Temperature
T
j
(For >10
6
MTTF)
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions: Case Temperature 25ºC
Parameter
Operational Frequency Range
Gain
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
CSO
CTB
Output IP2
Output IP3
Supply Voltage, Vcc
Device Voltage
Supply Current, Idd
Thermal Resistance (θ
jc)
Conditions
Min
50
Typical
18.5
±0.3
2.5
23
20
-70
-88
61
38
+8
+6
145
36
Max
1002
Units
MHz
dB
dB
dB
dB
dB
dBc
dBc
dBm
dBm
V
V
mA
o
C/W
10 dBmV/ch at input, 80 ch NTSC flat
10 dBmV/ch at input, 80 ch NTSC flat
See Note 1.
See Note 1.
See Note 2.
175
Notes:
1. OIP3 and OIP2 tested with two tones at 225 MHz and 325 MHz. Measured at 10 dBm/tone output power.
2. Voltage at the device is 6V.
Data Sheet: Rev A 05-15-11
© 2011 TriQuint Semiconductor, Inc.
-
2 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7427B
High Gain RF Amplifier, 75
Ω, 50-1200
MHz
Typical Performance Data
Note: Temperature indicated in plots below is Case Temperature.
Gain vs. Frequency
20
19
18
-40C
17
16
15
50
250
450
850
650
Frequency (MHz)
1050
1250
25C
85C
Input Return Loss (dB)
Input Return Loss vs. Frequency
0
5
10
15
20
25
30
35
40
45
50
250
450
650
850
Frequency (MHz)
1050
1250
-40C
25C
85C
Gain (dB)
Output Return Loss vs. Frequency
0
Output Return Loss (dB)
CSO vs. Frequency
10 dBmV/ch at input, 80 ch NTSC flat
5
10
15
20
25
30
35
40
50
250
450
650
850
Frequency (MHz)
1050
1250
-40C
CSO (dBc)
-50
25C
-55
-60
-65
-70
-75
-80
0
100
200
300
400
Frequency (MHz)
500
600
-40C
85C
25C
85C
CTB vs. Frequency
-60
-65
CTB (dBc)
10 dBmV/ch at input, 80 ch NTSC flat
-40C
-70
-75
-80
-85
-90
0
100
200
300
400
Frequency (MHz)
500
600
25C
85C
Data Sheet: Rev A 05-15-11
© 2011 TriQuint Semiconductor, Inc.
-
3 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7427B
Pin Description
High Gain RF Amplifier, 75
Ω, 50-1200
MHz
Pin
1
2
3
Backside Paddle
Symbol
RF_IN
GND
RF_OUT
GND
Description
RF Input , DC voltage present, blocking capacitor required
Ground
RF Output , DC voltage present, blocking capacitor required
Multiple vias should be employed to minimize inductance and thermal resistance
Applications Information
PC Board Layout
Core is 0.062”, FR4, є
r
= 4.7. Metal layers are 1-oz copper.
The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has
been developed to accommodate lead and package tolerances. Since
surface mount processes vary from company to company, careful
process development is recommended.
.
Data Sheet: Rev A 05-15-11
© 2011 TriQuint Semiconductor, Inc.
-
4 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7427B
High Gain RF Amplifier, 75
Ω, 50-1200
MHz
Applications Information
PC Board Schematic
Bill of Material
Reference Desg.
U1
C1, C4, C5
C2
C3
L1
L2
L3
L4
R1, R2
Value
0.01 uF
680 pF
120 pF
880 nH
3.9 nH
5.6 nH
500 nH
16
Ω
Description
RF Amplifier, 75 ohm , 50-1000MHz
Cap, Chip, 0603, 10%, 50V, X7R
Cap, Chip, 0402, 50V, 5%, COG
Cap, Chip, 0402, 50V, 5%, COG
Coil, Wire Wound, 1206, ±10%
Inductor, Chip, 0603, 5%
Inductor, Chip, 0603, 5%
Coil, Wire Wound, 1206, ±10%
Resistor, Chip, 1206, ±5%, 1/4W
Manufacturer Part Number
TriQuint
various
various
various
various
various
various
various
various
TAT7427B
Data Sheet: Rev A 05-15-11
© 2011 TriQuint Semiconductor, Inc.
-
5 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
