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TC1014-4.0VCTTR

Fixed Positive LDO Regulator, 4V, 0.25V Dropout, CMOS, PDSO5, SOT-23A, 5 PIN

器件类别:电源/电源管理    电源电路   

厂商名称:TelCom Semiconductor, Inc. (Microchip Technology)

厂商官网:http://www.telcom-semi.com/

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器件参数
参数名称
属性值
厂商名称
TelCom Semiconductor, Inc. (Microchip Technology)
包装说明
SOT-23A, 5 PIN
Reach Compliance Code
unknown
最大回动电压 1
0.25 V
最大输入电压
6 V
最小输入电压
2.7 V
JESD-30 代码
R-PDSO-G5
功能数量
1
端子数量
5
工作温度TJ-Max
125 °C
工作温度TJ-Min
-40 °C
最大输出电压 1
4.1 V
最小输出电压 1
3.9 V
标称输出电压 1
4 V
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
调节器类型
FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
表面贴装
YES
技术
CMOS
端子形式
GULL WING
端子位置
DUAL
文档预览
EVALUATION
KIT
AVAILABLE
TC1014
TC1015
TC1185
50mA, 100mA, 150mA CMOS LDOs with Shutdown and Reference
Bypass
FEATURES
s
s
s
s
s
s
s
s
s
s
Extremely Low Supply Current (50
µ
A, Typ.)
Very Low Dropout Voltage
Guaranteed 50mA, 100mA, and 150mA Output
(TC1014, TC1015, and TC1185, Respectively)
High Output Voltage Accuracy
Standard or Custom Output Voltages
Power-Saving Shutdown Mode
Reference Bypass Input for Ultra Low-Noise
Operation
Over-Current and Over-Temperature Protection
Space-Saving 5-Pin SOT-23A Package
Pin Compatible Upgrades for Bipolar Regulators
GENERAL DESCRIPTION
The TC1014, TC1015, and TC1185 are high accuracy
(typically
±0.5%)
CMOS upgrades for older (bipolar) low drop-
out regulators such as the LP2980. Designed specifically for
battery-operated systems, the devices’ CMOS construction
eliminates wasted ground current, significantly extending bat-
tery life. Total supply current is typically 50µA at full load
(20 to
60 times lower than in bipolar regulators!).
Key features for the devices include ultra low-noise opera-
tion (plus optional Bypass input), fast response to step changes
in load, and very low dropout voltage, typically 85mV (TC1014),
180mV (TC1015), and 270mV (TC1185) at full load. Supply
current is reduced to 0.5µA (max) and V
OUT
falls to zero when
the shutdown input is low. The devices also incorporate both
over-temperature and over-current protection.
The TC1014, TC1015, and TC1185 are stable with an
output capacitor of only 1µF and have a maximum output
current of 50mA, 100mA, and 150mA, respectively. For higher
output versions, see the TC1107, TC1108, and
TC1173 (I
OUT
= 300 mA) data sheets.
APPLICATIONS
s
s
s
s
s
s
s
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular / GSM / PHS Phones
Linear Post-Regulator for SMPS
Pagers
ORDERING INFORMATION
Part
Number
Package
Junction
Temp. Range
TYPICAL APPLICATION
TC1014-xxVCT
5-Pin SOT-23A* – 40°C to +125°C
TC1015-xxVCT
5-Pin SOT-23A* – 40°C to +125°C
TC1185-xxVCT
5-Pin SOT-23A* – 40°C to +125°C
TC1015EV
Evaluation Kit for CMOS LDO Family
NOTE:
*5-Pin SOT-23A is equivalent to EIAJ SC-74A.
V
OUT
5
1µF
V
OUT
V
IN
1
V
IN
Available Output Voltages:
1.8, 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0
xx indicates ouput voltages
Other output voltages are available. Please contact TelCom
Semiconductor for details.
2
GND
TC1014
TC1015
TC1185
PIN CONFIGURATION
3
SHDN
Bypass
4
470pF
Reference
Bypass Cap
(Optional)
V
OUT
5
Bypass
4
Shutdown Control
(from Power Control Logic)
1
V
IN
2
3
TC1014
TC1015
TC1185
(5-Pin SOT-23A*)
TOP VIEW
GND SHDN
NOTE:
*5-Pin SOT-23A is equivalent to EIAJ SC-74A
TC1014/TC1015/TC1185-3
1/20/00
TelCom Semiconductor reserves the right to make changes in the circuitry and specifications to its devices.
TC1014
TC1015
TC1185
ABSOLUTE MAXIMUM RATINGS*
Input Voltage .............................................................. 6.5V
Output Voltage .................................. (– 0.3) to (V
IN
+ 0.3)
Power Dissipation .................................. Internally Limited
Operating Temperature .................... – 40°C < T
J
< 125°C
Storage Temperature ............................ – 65°C to +150°C
50mA, 100mA, 150mA CMOS LDOs
with Shutdown and
Reference Bypass
Maximum Voltage On Any Pin .......... V
IN
+ 0.3V to – 0.3V
Lead Temperature (Soldering, 10 Sec.) ................ +260°C
*Stresses beyond those listed under "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS:
V
IN
= V
R
+ 1V, I
L
= 100µA, C
L
= 3.3µF, SHDN > V
IH
, T
A
= 25
°
C, unless otherwise noted.
Boldface
type specifications apply for junction temperatures of – 40°C to +125°C.
Symbol
V
IN
I
OUTMAX
Parameter
Input Operating Voltage
Maximum Output Current
Test Conditions
Note 1
TC1014
TC1015
TC1185
Note 2
Note 3
Min
2.7
50
100
150
V
R
– 2.5%
Typ
V
R
±0.5%
20
40
0.05
0.5
0.5
2
65
85
180
270
50
0.05
64
300
0.04
160
10
600
Max
6.0
V
R
+ 2.5%
0.35
2
3
120
250
400
80
0.5
450
Units
V
mA
V
OUT
TCV
OUT
∆V
OUT
/∆V
IN
∆V
OUT
/V
OUT
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
V
ppm/°C
%
%
V
IN
– V
OUT
I
IN
I
INSD
PSRR
I
OUTSC
∆V
OUT
/∆P
D
T
SD
∆T
SD
eN
(V
R
+ 1V) < V
IN
< 6V
TC1014;TC1015 I
L
= 0.1mA to I
OUTMAX
TC1185
I
L
= 0.1mA to I
OUTMAX
Note 4
Dropout Voltage
I
L
= 100µA
I
L
= 20mA
I
L
= 50mA
TC1015; TC1185 I
L
= 100mA
TC1185
I
L
= 150mA
Note 5
Supply Current (Note 8)
SHDN = V
IH
, I
L
= 0
Shutdown Supply Current
SHDN = 0V
Power Supply Rejection Ratio
F
RE
1KHz
Output Short Circuit Current
V
OUT
= 0V
Thermal Regulation
Notes 6, 7
Thermal Shutdown Die Temperature
Thermal Shutdown Hysteresis
Output Noise
I
L
= I
OUTMAX
, F = 10kHz
470pF from Bypass to GND
SHDN Input High Threshold
SHDN Input Low Threshold
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
mV
µA
µA
dB
mA
V/W
°C
°C
nV/√Hz
SHDN Input
V
IH
V
IL
45
15
%V
IN
%V
IN
NOTES:
1. The minimum V
IN
has to meet two conditions: V
IN
2.7V and V
IN
V
R
+ V
DROPOUT
.
2. V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3. TCV
OUT
= (V
OUTMAX
– V
OUTMIN
) x 10
6
V
OUT
x
∆T
4. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA
to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.
5. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential.
6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for T = 10msec.
7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal
resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissipation causes the device to initiate thermal
shutdown. Please see
Thermal Considerations
section of this data sheet for more details.
8. Apply for Junction Temperatures of –40°C to +85°C.
TC1014/TC1015/TC1185-3
1/20/00
2
50mA, 100mA, 150mA CMOS LDOs
with Shutdown and
Reference Bypass
TC1014
TC1015
TC1185
PIN DESCRIPTION
Pin No.
(5-Pin SOT-23A) Symbol
1
2
3
V
IN
GND
SHDN
Description
Unregulated supply input.
Ground terminal.
Shutdown control input. The regulator is fully enabled when a logic high is applied to this
input. The regulator enters shutdown when a logic low is applied to this input. During
shutdown, output voltage falls to zero, and supply current is reduced to 0.5µA (max).
Reference bypass input. Connecting a 470pF to this input further reduces output noise.
Regulated voltage output.
4
5
Bypass
V
OUT
DETAILED DESCRIPTION
The TC1014, TC1015, and TC1185 are precision fixed
output voltage regulators. (If an adjustable version is de-
sired, please see the TC1070, TC1071, or TC1187 data
sheets.) Unlike bipolar regulators, the TC1014, TC1015,
and TC1185 supply current does not increase with load
current. In addition, V
OUT
remains stable and within regula-
tion at very low load currents (an important consideration in
RTC and CMOS RAM battery back-up applications).
Figure 1 shows a typical application circuit. The regula-
tor is enabled any time the shutdown input (SHDN) is at or
above V
IH
, and shutdown (disabled) when SHDN is at or
below V
IL
. SHDN may be controlled by a CMOS logic gate,
or I/O port of a microcontroller. If the SHDN input is not
required, it should be connected directly to the input supply.
While in shutdown, supply current decreases to 0.05µA
(typical) and V
OUT
falls to zero volts.
Bypass Input
A 470pF capacitor connected from the Bypass input to
ground reduces noise present on the internal reference,
which in turn significantly reduces output noise. If output
noise is not a concern, this input may be left unconnected.
Larger capacitor values may be used, but results in a longer
time period to rated output voltage when power is initially
applied.
Output Capacitor
A 1µF (min) capacitor from V
OUT
to ground is required.
The output capacitor should have an effective series resis-
tance of 5Ω or less. A 1µF capacitor should be connected
from V
IN
to GND if there is more than 10 inches of wire
between the regulator and the AC filter capacitor, or if a
battery is used as the power source. Aluminum electrolytic
or tantalum capacitor types can be used. (Since many
aluminum electrolytic capacitors freeze at approximately –
30°C, solid tantalums are recommended for applications
operating below – 25°C.) When operating from sources
other than batteries, supply-noise rejection and transient
response can be improved by increasing the value of the
input and output capacitors and employing passive filtering
techniques.
V
IN
1µF
V
OUT
1µF
V
OUT
BATTERY
GND
TC1014
TC1015
TC1185
SHDN
Bypass
470pF
Reference
Bypass Cap
(Optional)
Shutdown Control
(to CMOS Logic or Tie to V
IN
if Unused)
Thermal Considerations
Thermal Shutdown
Integrated thermal protection circuitry shuts the regula-
tor off when die temperature exceeds 160°C. The regulator
remains off until the die temperature drops to approximately
150°C.
Power Dissipation
The amount of power the regulator dissipates is prima-
rily a function of input and output voltage, and output current.
The following equation is used to calculate worst case
actual
power dissipation:
Figure 1. Typical Application Circuit
TC1014/TC1015/TC1185-3 1/20/00
3
TC1014
TC1015
TC1185
P
D
(V
INMAX
– V
OUTMIN
)I
LOADMAX
Where:
P
D
V
INMAX
V
OUTMIN
I
LOADMAX
= Worst case actual power dissipation
= Maximum voltage on V
IN
= Minimum regulator output voltage
= Maximum output (load) current
Equation 1.
50mA, 100mA, 150mA CMOS LDOs
with Shutdown and
Reference Bypass
Maximum allowable power dissipation:
P
DMAX
= (T
JMAX
– T
AMAX
)
θ
JA
= (125 – 55)
220
= 318mW
In this example, the TC1014 dissipates a maximum of
only 26.7 mW; far below the allowable limit of 318 mW. In a
similar manner, Equation 1 and Equation 2 can be used to
calculate maximum current and/or input voltage limits.
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a ground
plane, wide traces at the pads, and wide power supply bus
lines combine to lower
θ
JA
and, therefore, increase the
maximum allowable power dissipation limit.
The maximum
allowable
power dissipation (Equation 2)
is a function of the maximum ambient temperature (T
AMAX
),
the maximum allowable die temperature (125°C) and the
thermal resistance from junction-to-air (θ
JA
). The
5-Pin SOT-23A package has a
θ
JA
of approximately
220
°
C/
Watt
when mounted on a single layer FR4 dielectric copper
clad PC board.
P
D MAX
= (T
JMAX
– T
AMAX)
θ
JA
Where all terms are previously defined.
Equation 2.
Equation 1 can be used in conjunction with Equation 2
to ensure regulator thermal operation is within limits. For
example:
Given:
V
INMAX
= 3.0V +10%
V
OUTMIN
= 2.7V – 2.5%
I
LOADMAX
= 40mA
T
JMAX
= 125°C
T
AMAX
= 55°C
Find:
1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
P
D
(V
INMAX
– V
OUTMIN
)I
LOADMAX
= [(3.0 x 1.1) – (2.7 x .975)]40 x 10
–3
= 26.7mW
TC1014/TC1015/TC1185-3
1/20/00
4
50mA, 100mA, 150mA CMOS LDOs
with Shutdown and
Reference Bypass
TC1014
TC1015
TC1185
TYPICAL CHARACTERISTICS:
(Unless otherwise specified, all parts are measured at Temperature = 25
°
C)
0.020
0.018
DROPOUT VOLTAGE (V)
Dropout Voltage vs. Temperature (V
OUT
= 3.3V)
I
LOAD
= 10mA
0.100
Dropout Voltage vs. Temperature (V
OUT
= 3.3V)
I
LOAD
= 50mA
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
-40
-20
0
20
50
70
125
TEMPERATURE (°C)
C
IN
= 1µF
C
OUT
= 1µF
DROPOUT VOLTAGE (V)
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
C
IN
= 1µF
C
OUT
= 1µF
-40
-20
0
20
50
TEMPERATURE
°C
70
125
Dropout Voltage vs. Temperature (V
OUT
= 3.3V)
0.200
0.180
DROPOUT VOLTAGE (V)
0.300
I
LOAD
= 100mA
Dropout Voltage vs. Temperature (V
OUT
= 3.3V)
I
LOAD
= 150mA
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
-40
-20
0
20
50
TEMPERATURE
°C
70
125
C
IN
= 1µF
C
OUT
= 1µF
DROPOUT VOLTAGE (V)
0.250
0.200
0.150
0.100
0.050
0.000
-40
-20
C
IN
= 1µF
C
OUT
= 1µF
TEMPERATURE
°C
0
20
50
70
125
Ground Current vs.V
IN
(V
OUT
= 3.3V)
90
80
I
LOAD
= 10mA
90
80
Ground Current vs.V
IN
(V
OUT
= 3.3V)
I
LOAD
= 100mA
GND CURRENT (µA)
70
60
50
40
30
20
10
0
0 0.5
1 1.5
2 2.5 3 3.5
0 0.5 1 1.5 2 2.5 3 3.5
4
4.5 5 5.5 6 6.5 7 7.5
4
4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
GND CURRENT (µA)
70
60
50
40
30
20
10
0
0 0.5
1 1.5
2 2.5
0 0.5 1 1.5 2 2.5
3 3.5 4
4.5
5 5.5
6
6.5 7 7.5
3 3.5 4
4.5
5 5.5
6
6.5 7 7.5
C
IN
= 1µF
C
OUT
= 1µF
C
IN
= 1µF
C
OUT
= 1µF
V
IN
(V)
TC1014/TC1015/TC1185-3 1/20/00
5
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