M
Features
TC1054/TC1055/TC1186
Package Type
5-Pin SOT-23A
V
OUT
5
TC1054
TC1055
TC1186
1
V
IN
2
GND
3
SHDN
ERROR
4
50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown
and ERROR Output
• Low Ground Current for Longer Battery Life
• Low Dropout Voltage
• Choice of 50 mA (TC1054), 100 mA (TC1055)
and 150 mA (TC1186) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• ERROR Output Can Be Used as a Low Battery
Detector or Microcontroller Reset Generator
• Over-Current and Over-Temperature Protection
• 5-Pin SOT-23A Package
• Pin Compatible Upgrades for Bipolar Regulators
NOTE:
5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
Applications
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulators for SMPS
Pagers
General Description
The TC1054, TC1055 and TC1186 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
low dropout regulators. Designed specifically for
battery-operated systems, the devices’ CMOS
construction minimizes ground current, extending bat-
tery life. Total supply current is typically 50 µA at full
load (20 to 60 times lower than in bipolar regulators).
The devices’ key features include low noise operation,
low dropout voltage – typically 85 mV (TC1054),
180 mV (TC1055) and 270 mV (TC1186) at full load —
and fast response to step changes in load. An error out-
put (ERROR) is asserted when the devices are out-of-
regulation (due to a low input voltage or excessive out-
put current). ERROR can be used as a low battery
warning or as a processor RESET signal (with the addi-
tion of an external RC network). Supply current is
reduced to 0.5 µA (max), with both V
OUT
and ERROR
disabled when the shutdown input is low. The devices
incorporate both over-temperature and over-current
protection.
The TC1054, TC1055 and TC1186 are stable with an
output capacitor of only 1 µF and have a maximum
output current of 50 mA, 100 mA and 150 mA,
respectively. For higher output current regulators,
please refer to the TC1173 (I
OUT
= 300 mA) data sheet
(DS21632).
Typical Application
1
5
+
1 µF
V
IN
V
IN
V
OUT
V
OUT
2
GND
TC1054
TC1055
TC1186
1 MΩ
3
SHDN
ERROR
4
ERROR
Shutdown Control
(from Power Control Logic)
2003 Microchip Technology Inc.
DS21350C-page 1
TC1054/TC1055/TC1186
1.0
ELECTRICAL
CHARACTERISTICS
† Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings †
Input Voltage ....................................................................6.5V
Output Voltage ..................................... (-0.3V) to (V
IN
+ 0.3V)
Power Dissipation ......................... Internally Limited
(Note 6)
Maximum Voltage on Any Pin ...................V
IN
+0.3V to -0.3V
Operating Junction Temperature Range .. -40°C < T
J
< 125°C
Storage Temperature ....................................-65°C to +150°C
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
IN
= V
OUT
+ 1V, I
L
= 100 µA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Input Operating Voltage
Maximum Output Current
Sym
V
IN
I
OUT
MAX
Min
2.7
50
100
150
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
20
40
0.05
0.5
0.5
2
65
85
180
270
50
0.05
64
300
0.04
160
10
Max
6.0
—
—
—
—
—
0.35
2
3
—
—
120
250
400
80
0.5
—
450
—
—
—
Units
V
mA
Note 8
TC1054
TC1055
TC1186
Note 1
Conditions
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation:
TC1054; TC1055
TC1186
Dropout Voltage:
V
OUT
TCV
OUT
∆V
OUT
/∆V
IN
∆V
OUT
/V
OUT
V
R
– 2.5%
V
R
±0.5%
V
R
+ 2.5%
V
ppm/°C
Note 2
%
%
mV
(V
R
+ 1V)
≤
V
IN
≤
6V
(Note 3)
I
L
= 0.1 mA to I
OUT
MAX
I
L
= 0.1 mA to I
OUT
MAX
I
L
= 100 µA
I
L
= 20 mA
I
L
= 50 mA
I
L
= 100 mA
I
L
= 150 mA
(Note 4)
SHDN = V
IH
, I
L
= 0 µA
(Note 9)
SHDN = 0V
f
≤
1 kHz
V
OUT
= 0V
Notes 5, 6
V
IN
-V
OUT
TC1055; TC1186
TC1186
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
I
IN
I
INSD
PSRR
I
OUT
SC
∆V
OUT
/∆P
D
T
SD
∆T
SD
µA
µA
dB
mA
V/W
°C
°C
Note 1:
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2:
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
∆T
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value.
5:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 msec.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dis-
sipation causes the device to initiate thermal shutdown. Please see Section 5.0, “Thermal Considerations”, for more
details.
7:
Hysteresis voltage is referenced by V
R
.
8:
The minimum V
IN
has to justify the conditions: V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUT
MAX
.
9:
Apply for junction temperatures of -40C to +85C.
DS21350C-page 2
2003 Microchip Technology Inc.
TC1054/TC1055/TC1186
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= V
OUT
+ 1V, I
L
= 100 µA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Output Noise
SHDN Input
SHDN Input High Threshold
SHDN Input Low Threshold
ERROR Output
Minimum V
IN
Operating Voltage
Output Logic Low Voltage
ERROR Threshold Voltage
ERROR Positive Hysteresis
V
IN
MIN
V
OL
V
TH
V
HYS
1.0
—
—
—
—
—
0.95 x V
R
50
—
400
—
—
V
mV
V
mV
1 mA Flows to ERROR
See
Figure 4-2
Note 7
V
IH
V
IL
45
—
—
—
—
15
%V
IN
%V
IN
V
IN
= 2.5V to 6.5V
V
IN
= 2.5V to 6.5V
Sym
eN
Min
—
Typ
260
Max
—
Units
Conditions
nV/√Hz I
L
= I
OUT
MAX
Note 1:
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2:
TC V
OUT
= (V
OUT
MAX
– V
OUT
MIN
)x 10
6
V
OUT
x
∆T
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal
value.
5:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
L
MAX
at V
IN
= 6V for T = 10 msec.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dis-
sipation causes the device to initiate thermal shutdown. Please see Section 5.0, “Thermal Considerations”, for more
details.
7:
Hysteresis voltage is referenced by V
R
.
8:
The minimum V
IN
has to justify the conditions: V
IN
≥
V
R
+ V
DROPOUT
and V
IN
≥
2.7V for I
L
= 0.1 mA to I
OUT
MAX
.
9:
Apply for junction temperatures of -40C to +85C.
2003 Microchip Technology Inc.
DS21350C-page 3
TC1054/TC1055/TC1186
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated,
V
IN
= V
OUT
+ 1V, I
L
= 100 µA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
0.020
0.018
0.100
I
LOAD
= 10 mA
DROPOUT VOLTAGE (V)
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
0
20
50
TEMPERATURE (°C)
70
125
I
LOAD
= 50 mA
DROPOUT VOLTAGE (V)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
-40
-20
C
IN
= 1
µF
C
OUT
= 1
µF
C
IN
= 1
µF
C
OUT
= 1
µF
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
FIGURE 2-1:
Dropout Voltage vs.
Temperature (I
LOAD
= 10 mA).
0.200
0.180
DROPOUT VOLTAGE (V)
FIGURE 2-4:
Dropout Voltage vs.
Temperature (I
LOAD
= 50 mA).
0.300
I
LOAD
= 100 mA
I
LOAD
= 150 mA
DROPOUT VOLTAGE (V)
0.250
0.200
0.150
0.100
0.050
0.000
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
-40
-20
0
20
50
70
125
C
IN
= 1
µF
C
OUT
= 1
µF
C
IN
= 1
µF
C
OUT
= 1
µF
-40
-20
0
20
50
TEMPERATURE (°C)
70
125
TEMPERATURE (°C)
FIGURE 2-2:
Dropout Voltage vs.
Temperature (I
LOAD
= 100 mA).
90
80
FIGURE 2-5:
Dropout Voltage vs.
Temperature (I
LOAD
= 150 mA).
90
I
LOAD
= 10 mA
GND CURRENT (
µ
A)
80
70
60
50
40
30
20
10
0
I
LOAD
= 100 mA
GND CURRENT (
µ
A)
70
60
50
40
30
20
10
0
C
IN
= 1
µF
C
OUT
= 1
µF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
C
IN
= 1
µF
C
OUT
= 1
µF
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
FIGURE 2-3:
(I
LOAD
= 10 mA).
Ground Current vs. V
IN
FIGURE 2-6:
(I
LOAD
= 100 mA).
Ground Current vs. V
IN
DS21350C-page 4
2003 Microchip Technology Inc.
TC1054/TC1055/TC1186
Note:
Unless otherwise indicated,
V
IN
= V
OUT
+ 1V, I
L
= 100 µA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
80
70
GND CURRENT (µA)
3.5
I
LOAD
= 150 mA
I
LOAD
= 0
3
2.5
60
V
OUT
(V)
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
IN
(V)
2
1.5
1
C
IN
= 1
µF
C
OUT
= 1
µF
0.5
0
0
0.5 1 1.5
2 2.5 3 3.5
4 4.5 5
C
IN
= 1
µF
C
OUT
= 1
µF
5.5 6 6.5 7
V
IN
(V)
FIGURE 2-7:
(I
LOAD
= 150 mA).
3.5
3.0
2.5
V
OUT
(V)
Ground Current vs. V
IN
FIGURE 2-10:
(I
LOAD
= 0 mA).
V
OUT
vs. V
IN
I
LOAD
= 100 mA
3.320
3.315
3.310
3.305
I
LOAD
= 10 mA
2.0
V
OUT
(V)
1.5
1.0
0.5
0.0
0
3.300
3.295
3.290
C
IN
= 1
µF
C
OUT
= 1
µF
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
V
IN
(V)
3.285
3.280
3.275
-40
C
IN
= 1
µF
C
OUT
= 1
µF
V
IN
= 4.3V
-20
-10
0
20
40
85
125
FIGURE 2-8:
(I
LOAD
= 100 mA).
3.290
3.288
3.286
V
OUT
vs. V
IN
TEMPERATURE (°C)
FIGURE 2-11:
Output Voltage (3.3V) vs.
Temperature (I
LOAD
= 10 mA).
5.025
5.020
5.015
I
LOAD
= 150 mA
I
LOAD
= 10 mA
V
OUT
(V)
3.284
V
OUT
(V)
C
IN
= 1
µF
C
OUT
= 1
µF
V
IN
= 4.3V
-40
-20
-10
0
20
40
85
125
3.282
3.280
3.278
3.276
3.274
5.010
5.005
5.000
4.995
4.990
4.985
V
IN
= 6V
C
IN
= 1
µF
C
OUT
= 1
µF
-40
-20
-10
0
20
40
85
125
TEMPERATURE (°C)
TEMPERATURE (°C)
FIGURE 2-9:
(I
LOAD
= 150 mA).
V
OUT
vs. V
IN
FIGURE 2-12:
Output Voltage (5V) vs.
Temperature (I
LOAD
= 10 mA).
2003 Microchip Technology Inc.
DS21350C-page 5
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