M
Features
• LDO with Integrated Microcontroller Reset
Monitor Functionality
• Low Input Supply Current (80 µA, typical)
• Very Low Dropout Voltage
• 10 µsec (typ.) Wake-Up Time from SHDN
• 300 mA Output Current
• Standard or Custom Output and Detected
Voltages
• Power-Saving Shutdown Mode
• Bypass Input for Quiet Operation
• Separate Input for Detected Voltage
• 140 msec Minimum RESET Output Duration
• Space-Saving MSOP Package
• Specified Junction Temperature Range:
-40°C to +125°C
TC1300
General Description
The TC1300 combines a low dropout regulator and a
microcontroller reset monitor in an 8-Pin MSOP pack-
age. Total supply current is 80 µA (typical), 20 to 60
times lower than bipolar regulators.
The TC1300 has a precise output with a typical accu-
racy of ±0.5%. Other key features include low noise
operation, low dropout voltage and internal feed-
forward compensation for fast response to step
changes in load. The TC1300 has both over-tempera-
ture and over-current protection. When the shutdown
control (SHDN) is low, the regulator output voltage falls
to zero, RESET output remains valid and supply cur-
rent is reduced to 30 µA (typical). The TC1300 is rated
for 300 mA of output current and stable with a 1 µF out-
put capacitor.
An active-low RESET is asserted when the detected
voltage (V
DET
) falls below the reset voltage threshold.
The RESET output remains low for 300 msec (typical)
after V
DET
rises above reset threshold. The TC1300
also has a fast wake-up response time (10 µsec.,
typical) when released from shutdown.
300 mA CMOS LDO with Shutdown, Bypass and
Independent Delayed Reset Function
Applications
•
•
•
•
•
Battery-Operated Systems
Portable Computers
Medical Instruments
Pagers
Cellular / GSM / PHS Phones
Typical Application Circuit
RESET
1
RESET
V
DET
V
IN
8
V
DET
Related Literature
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765.
• AN766, “Pin-Compatible CMOS Upgrades to
Bipolar LDOs”, DS00766.
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792.
V
OUT
2
C
1
1 µF
3
4
C
BYPASS
470 pF
(Optional)
V
OUT
TC1300
GND
Bypass
7
C
2
1 µF
6
Battery
+
NC
SHDN 5
Package Type
MSOP
RESET
1
V
OUT
2
GND
3
Bypass
4
TC1300VUA
8
V
DET
7
V
IN
6
NC
5
SHDN
Shutdown Control
(from Power
Control Logic)
2002 Microchip Technology Inc.
DS21385C-page 1
TC1300
1.0
ELECTRICAL
CHARACTERISTICS
PIN DESCRIPTIONS
Pin
RESET
Description
RESET output remains low while V
DET
is
below the reset voltage threshold and for
300 msec after V
DET
rises above reset thesh-
old.
Regulated Voltage Output
Ground Terminal
Reference Bypass Input. Connecting an
optional 470 pF to this input further reduces
output noise.
Shutdown Control Input. The regulator is fully
enabled when a logic high is applied to this
input. The regulator enters shutdown when a
logic low is applied to this input. During shut-
down, regulator output voltage falls to zero,
RESET output remains valid and supply cur-
rent is reduced to 30 µA (typ.).
No connect
Power Supply Input
Detected Input Voltage. V
DET
and V
IN
can be
connected together.
Absolute Maximum Ratings*
Input Voltage ....................................................................6.5V
Output Voltage ................................. (V
SS
- 0.3) to (V
IN
+ 0.3)
Power Dissipation ......................... Internally Limited
(Note 6)
Operating Junction Temperature, T
J
....... – 40°C < T
J
< 150°C
Maximum Junction Temperature, Tj .............................. 150°C
Storage Temperature .................................. – 65°C to +150°C
Maximum Voltage on Any Pin ............. (V
SS
-0.3) to (V
IN
+0.3)
*Notice:
Stresses above those listed under “maximum rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
V
OUT
GND
Bypass
SHDN
NC
V
IN
V
DET
ELECTRICAL CHARACTERISTICS
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
BOLDFACE
type specifications apply
for junction temperature
(Note 8)
of -40°C to +125°C.
Parameters
Input Operating Voltage
Maximum Output Current
Output Voltage
V
OUT
Temperature Coefficient
Line Regulation
Load Regulation
Sym
V
IN
I
OUT MAX
V
OUT
∆V
OUT
/∆T
∆V
OUT
/∆V
IN
∆V
OUT
/V
OUT
Min
2.7
300
—
V
R
- 2.5%
—
—
—
Typ
—
—
V
R
± 0.5%
—
25
0.02
0.5
Max
6.0
—
—
V
R
+ 2.5%
—
0.35
2.0
Units
V
mA
V
Note 1
Note 7
Conditions
ppm/°C
Note 2
%
%
(V
R
+ 1V) < V
IN
< 6V
I
L
= 0.1 mA to I
OUT
MAX,
Note 3
Note 1:
V
R
is the regulator output voltage setting.
2:
6
(
V O UTMAX
–
V OUTMIN
) ×
10
-
TCV
= -------------------------------------------------------------------------------------
OUT
V
× ∆
T
OUT
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5:
Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7:
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
(V
R
+ V
DROPOUT
).
8:
The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
DS21385C-page 2
2002 Microchip Technology Inc.
TC1300
ELECTRICAL CHARACTERISTICS (CONTINUED)
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
BOLDFACE
type specifications apply
for junction temperature
(Note 8)
of -40°C to +125°C.
Parameters
Dropout Voltage
(Note 4)
Sym
V
IN –
V
OUT
Min
—
Typ
1
70
210
80
30
60
800
0.04
900
Max
30
130
390
160
60
—
1200
—
—
Units
mV
Conditions
I
L
= 0.1 mA
I
L
= 100 mA
I
L
= 300 mA
SHDN = V
IH
SHDN = 0V
f
≤
1 kHz, C
BYPASS
= 1 nF
V
OUT
= 0V
Note 5
f < 1 kHz, C
OUT
= 1 µF,
R
LOAD
= 50
Ω,
C
BYPASS
= 1 nF
C
IN
= 1 µF, V
IN
= 5V,
C
OUT
= 4.7 µF, I
L
= 30 mA,
See Figure 3-2
C
IN
= 1 µF, V
IN
= 5V
C
OUT
= 4.7 µF
I
L
= 30 mA, See Figure 3-2
Supply Current
Shutdown Supply Current
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
Output Noise
I
SS1
I
SS2
PSRR
I
OUT SC
∆V
OUT
/∆P
D
eN
—
—
—
—
—
—
µA
µA
dB
mA
%/W
nV/Hz
Wake-Up Time
(from Shutdown Mode)
Settling Time
(from Shutdown Mode)
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
Thermal Resistance Junction to
Case
SHDN Input High Threshold
SHDN Input Low Threshold
t
WK
—
10
20
µsec
ts
—
50
—
µsec
T
SD
T
HYS
RthetaJA
V
IH
V
IL
—
—
—
45
—
150
10
200
—
—
—
—
—
—
15
°C
°C
°C/Watt EIA/JEDEC JESD51-751-7 4-
Layer Board
%V
IN
%V
IN
V
IN
= 2.5V to 6.0V
V
IN
= 2.5V to 6.0V
Note 1:
V
R
is the regulator output voltage setting.
2:
6
(
V
–
V
) ×
10
O UTMAX
OUTMIN
-
TCV
= -------------------------------------------------------------------------------------
OUT
V
× ∆
T
OUT
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5:
Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7:
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
(V
R
+ V
DROPOUT
).
8:
The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
2002 Microchip Technology Inc.
DS21385C-page 3
TC1300
ELECTRICAL CHARACTERISTICS (CONTINUED)
V
IN
= V
OUT
+ 1V, I
L
= 0.1 mA, C
L
= 3.3 µF, SHDN > V
IH
, T
A
= 25°C, unless otherwise noted.
BOLDFACE
type specifications apply
for junction temperature
(Note 8)
of -40°C to +125°C.
Parameters
RESET Output
Voltage Range
Reset Threshold
V
DET
V
TH
1.0
1.2
2.59
2.55
2.36
2.32
Reset Threshold Tempco
V
DET
to Reset Delay
Reset Active Timeout Period
RESET Output Voltage Low
RESET Output Voltage High
∆V
TH
/
∆T
t
RPD
t
RPU
V
OL
V
OH
—
—
140
—
0.8 V
DET
—
—
2.63
—
2.40
—
30
160
300
—
—
6.0
6.0
2.66
2.70
2.43
2.47
—
—
560
0.3
—
ppm/°C
µsec
msec
V
V
V
DET
= V
TH
min,
I
SINK
= 1.2 mA
V
DET
> V
TH
max,
I
SOURCE
= 500 µA
V
DET
= V
TH
to (V
TH
– 100 mV)
V
V
T
A
= 0°C to +70°C
T
A
= – 40°C to +125°C
TC1300R-XX, T
A
= +25°C
TC1300R-XX,
T
A
= – 40°C to +125°C
TC1300Y-XX, T
A
= +25°C
TC1300Y-XX,
T
A
= – 40°C to +125°C
Sym
Min
Typ
Max
Units
Conditions
Note 1:
V
R
is the regulator output voltage setting.
2:
6
(
V O UTMAX
–
V OUTMIN
) ×
10
-
TCV OUT
= -------------------------------------------------------------------------------------
V OUT
× ∆
T
3:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
4:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value
measured at a 1V differential.
5:
Thermal Regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power dissi-
pation causes the device to initiate thermal shutdown. Please see Section 4.0, “Thermal Considerations”, of this data
sheet for more details.
7:
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
(V
R
+ V
DROPOUT
).
8:
The junction temperature of the device is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction temperature
over the ambient temperature is not significant.
DS21385C-page 4
2002 Microchip Technology Inc.
TC1300
2.0
Note:
TYPICAL CHARACTERISTICS
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Junction temperature (T
J
) is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
Ambient temperature is not significant.
0.035
450
400
350
300
250
200
150
100
50
0
-40 -25 -10
5
20
35
50
65
80
95 110 125
Line Regulation (%)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
-40 -25 -10
5
20
35
50
V
OUT
= 3.0V
V
IN
= 3.5V to 6.0V
65
80
95 110 125
Junction Temperature (°C)
Reset Active Time-out Period
(ms)
Junction Temperature (°C)
FIGURE 2-1:
Temperature.
0.14
Supply Current (mA)
0.12
0.10
0.08
0.06
0.04
0.02
0.00
-40 -25 -10
5
Line Regulation vs.
FIGURE 2-4:
Reset Active Time-out
Period vs. Temperature.
10.00
V
OUT
= 3.0V
V
OUT
= 2.5V
Output Noise (µV/lHz)
V
OUT
= 5.0V
V
IN
= V
OUT
+ 1V
1.00
R
LOAD
= 50 Ohms
C
OUT
= 1 µF
0.10
20 35 50 65 80 95 110 125
0.01
0.01
0.10
1
1.00
10
10.00
100
100.00
1000
1000.00
Junction Temperature (°C)
Frequency (kHz)
FIGURE 2-2:
Temperature.
2.500
2.499
Supply Current vs.
FIGURE 2-5:
Output Noise vs. Frequency.
0.30
V
OUT
= 2.5V
T
J
= -40°C
T
J
= +125°C
T
J
= +25°C
Output Voltage (V)
2.498
2.497
2.496
2.495
2.494
2.493
2.492
2.491
-40 -25 -10
5
20
35
50
65
80
95 110 125
Dropout Voltage (V)
0.25
0.20
0.15
0.10
0.05
0.00
0
100
V
IN
= V
OUT
+ 1V
I
OUT
= 100 µA
V
OUT
= 2.5V
200
300
400
Junction Temperature (°C)
Load Current (mA)
FIGURE 2-3:
Temperature.
Normalized V
OUT
vs.
FIGURE 2-6:
Current (2.5V).
Dropout Voltage vs. Load
2002 Microchip Technology Inc.
DS21385C-page 5
