TC1302A/B
Low Quiescent Current Dual Output LDO
Features
• Dual Output LDO:
- V
OUT1
= 1.5V to 3.3V @ 300 mA
- V
OUT2
= 1.5V to 3.3V @ 150 mA
• Output Voltage (See Table 8-1)
• Low Dropout Voltage:
- V
OUT1
= 104 mV @ 300 mA Typical
- V
OUT2
= 150 mV @ 150 mA Typical
• Low Supply Current: 116 µA Typical
TC1302A/B with both output voltages available
• Reference Bypass Input for Low-Noise Operation
• Both Output Voltages Stable with a Minimum of
1 µF Ceramic Output Capacitor
• Separate V
OUT1
and V
OUT2
SHDN pins
(TC1302B)
• Power-Saving Shutdown Mode of Operation
• Wake-up from SHDN: 5.3 µs. Typical
• Small 8-pin DFN or MSOP Package Options
• Operating Junction Temperature Range:
- -40°C to +125°C
• Overtemperature and Overcurrent Protection
Description
The TC1302A/B combines two Low Dropout (LDO)
regulators into a single 8-pin MSOP or DFN package.
Both regulator outputs feature low dropout voltage,
104 mV @ 300 mA for V
OUT1
, 150 mV @ 150 mA for
V
OUT2
, low quiescent current consumption, 58 µA each
and a typical regulation accuracy of 0.5%. Several
fixed-output voltage combinations are available. A
reference bypass pin is available to further reduce
output noise and improve the power supply rejection
ratio of both LDOs.
The TC1302A/B is stable over all line and load
conditions, with a minimum of 1 µF of ceramic output
capacitance, and utilizes a unique compensation
scheme to provide fast dynamic response to sudden
line voltage and load current changes.
Additional features include an overcurrent limit and
overtemperature protection that combine to provide a
robust design for all load fault conditions.
Package Types
8-Pin DFN/MSOP
DFN8
NC 1
V
OUT1
2
GND 3
Bypass 4
8 NC
7 V
IN
6 V
OUT2
Applications
•
•
•
•
•
•
Cellular/GSM/PHS Phones
Battery-Operated Systems
Hand-Held Medical Instruments
Portable Computers/PDAs
Linear Post-Regulators for SMPS
Pagers
TC1302A
NC 1
V
OUT1
2
GND 3
MSOP8
8 NC
7 V
IN
6 V
OUT2
5 SHDN2
5 SHDN2 Bypass 4
Related Literature
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs”, DS00766,
Microchip Technology Inc., 2002
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
NC 1
V
OUT1
2
GND 3
Bypass 4
DFN8
TC1302B
NC 1
8 SHDN1
V
OUT1
2
7 V
IN
6 V
OUT2
GND 3
5 SHDN2 Bypass 4
MSOP8
8 SHDN1
7 V
IN
6 V
OUT2
5 SHDN2
©
2005 Microchip Technology Inc.
DS21333B-page 1
TC1302A/B
Functional Block Diagrams
TC1302A
V
IN
LDO #1
300 mA
V
OUT1
V
IN
SHDN1
LDO #1
300 mA
TC1302B
V
OUT1
V
OUT2
SHDN2
LDO #2
150 mA
SHDN2
LDO #2
150 mA
V
OUT2
GND
Bypass
Bandgap
Reference
1.2V
GND
Bypass
Bandgap
Reference
1.2V
Typical Application Circuits
TC1302A
1
2.8V @ 300 mA
C
OUT1
1 µF Ceramic
X5R
C
BYPASS
10 nF Ceramic
(Note)
NC
NC
8
BATTERY
C
IN
1 µF
2.7V
to
4.2V
2 V
OUT1
3
4
GND
V
IN
7
V
OUT2
6 2.6V @ 150 mA
5
C
OUT2
1 µF Ceramic
X5R
Bypass SHDN2
ON/OFF Control V
OUT2
ON/OFF Control V
OUT1
TC1302B
1
2.8V @ 300 mA
C
OUT1
1 µF Ceramic
X5R
NC
SHDN1
8
BATTERY
C
IN
1 µF
2.7V
to
4.2V
2 V
OUT1
3
4
GND
V
IN
7
V
OUT2
6 2.6V @ 150 mA
5
Bypass SHDN2
C
OUT2
1 µF Ceramic
X5R
Note:
C
BYPASS
is optional
ON/OFF Control V
OUT2
DS21333B-page 2
©
2005 Microchip Technology Inc.
TC1302A/B
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings †
V
DD
...................................................................................6.5V
Maximum Voltage on Any Pin ...... (V
SS
– 0.3) to (V
IN
+ 0.3)V
Power Dissipation ..........................Internally Limited
(Note 7)
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature, T
J
........................... +150°C
Continuous Operating Temperature Range ..-40°C to +125°C
ESD protection on all pins, HBM, MM
.....................
4 kV, 400V
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+1V, I
OUT1
= I
OUT2
= 100 µA, C
IN
= 4.7 µF,
C
OUT1
= C
OUT2
= 1 µF, C
BYPASS
= 10 nF, SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Input Operating Voltage
Maximum Output Current
Maximum Output Current
Output Voltage Tolerance
(V
OUT1
and V
OUT2
)
Temperature Coefficient
(V
OUT1
and V
OUT2
)
Line Regulation
(V
OUT1
and V
OUT2
)
Load Regulation, V
OUT
≥
2.5V
(V
OUT1
and V
OUT2
)
Load Regulation, V
OUT
< 2.5V
(V
OUT1
and V
OUT2
)
Thermal Regulation
Dropout Voltage (Note 6)
V
OUT1
> 2.7V
V
OUT2
> 2.6V
Supply Current
TC1302A
TC1302B
Note 1:
2:
3:
4:
I
IN(A)
I
IN(B)
—
—
103
114
180
180
µA
µA
SHDN2 = V
IN
, I
OUT1
= I
OUT2
= 0 mA
SHDN1 = SHDN2 = V
IN
,
I
OUT1
= I
OUT2
= 0 mA
V
IN
– V
OUT
V
IN
– V
OUT
—
—
104
150
180
250
mV
mV
I
OUT1
= 300 mA
I
OUT2
= 150 mA
Sym
V
IN
I
OUT1Max
I
OUT2Max
V
OUT
TCV
OUT
ΔV
OUT
/ΔV
IN
ΔV
OUT
/
V
OUT
ΔV
OUT
/
V
OUT
ΔV
OUT
/ΔP
D
Min
2.7
300
150
V
R
– 2.5
—
—
-1
-1.5
—
Typ
—
—
—
Max
6.0
—
—
Units
V
mA
mA
%
ppm/°C
%/V
%
%
%/W
Note 1
V
IN
= 2.7V to 6.0V
(Note 1)
V
IN
= 2.7V to 6.0V
(Note 1)
Note 2
Note 3
(V
R
+ 1V)
≤
V
IN
≤
6V
I
OUTX
= 0.1 mA to I
OUTMax
,
(Note 4)
I
OUTX
= 0.1 mA to I
OUTMax
,
(Note 4)
Note 5
Conditions
V
R
±0.5
V
R
+ 2.5
25
0.02
0.1
0.1
0.04
—
0.2
+1
+1.5
—
5:
6:
7:
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
R
+ V
DROPOUT
.
V
R
is defined as the higher of the two regulator nominal output voltages (V
OUT1
or V
OUT2
).
TCV
OUT
= ((V
OUTmax
- V
OUTmin
) * 10
6
)/(V
OUT
*
ΔT).
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
value measured at a 1V differential.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
©
2005 Microchip Technology Inc.
DS21333B-page 3
TC1302A/B
DC CHARACTERISTICS (Continued)
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+1V, I
OUT1
= I
OUT2
= 100 µA, C
IN
= 4.7 µF,
C
OUT1
= C
OUT2
= 1 µF, C
BYPASS
= 10 nF, SHDN > V
IH
, T
A
= +25°C.
Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Parameters
Shutdown Supply Current
TC1302A
Shutdown Supply Current
TC1302B
Power Supply Rejection Ratio
Output Noise
Output Short Circuit Current (Average)
V
OUT1
V
OUT2
SHDN Input High Threshold
SHDN Input Low Threshold
Wake Up Time (From SHDN
mode), (V
OUT2
)
Settling Time (From SHDN mode),
(V
OUT2
)
Thermal Shutdown Die
Temperature
Thermal Shutdown Hysteresis
Note 1:
2:
3:
4:
I
OUTsc1
I
OUTsc2
V
IH
V
IL
t
WK
t
S
T
SD
T
HYS
—
—
45
—
—
—
—
—
200
140
—
—
5.3
50
150
10
—
—
—
15
20
—
—
—
mA
mA
%V
IN
%V
IN
µs
µs
°C
°C
R
LOAD1
≤
1Ω
R
LOAD2
≤
1Ω
V
IN
= 2.7V to 6.0V
V
IN
= 2.7V to 6.0V
V
IN
= 5V, I
OUT1
= I
OUT2
= 30 mA,
See Figure 5-1
V
IN
= 5V, I
OUT1
= I
OUT2
= 50 mA,
See Figure 5-2
V
IN
= 5V, I
OUT1
= I
OUT2
= 100 µA
V
IN
= 5V
Sym
I
IN_SHDNA
I
IN_SHDNB
PSRR
eN
Min
—
—
—
—
Typ
58
0.1
58
830
Max
90
1
—
—
Units
µA
µA
dB
Conditions
SHDN2 = GND
SHDN1 = SHDN2 = GND
f
≤
100 Hz, I
OUT1
= I
OUT2
= 50 mA,
C
IN
= 0 µF
nV/(Hz)
½
f
≤
1 kHz, I
OUT1
= I
OUT2
= 50 mA,
C
IN
= 0 µF
5:
6:
7:
The minimum V
IN
has to meet two conditions: V
IN
≥
2.7V and V
IN
≥
V
R
+ V
DROPOUT
.
V
R
is defined as the higher of the two regulator nominal output voltages (V
OUT1
or V
OUT2
).
TCV
OUT
= ((V
OUTmax
- V
OUTmin
) * 10
6
)/(V
OUT
*
ΔT).
Regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
Thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
LMAX
at V
IN
= 6V for t = 10 msec.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
value measured at a 1V differential.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
θ
JA
). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Unless otherwise indicated, all limits are specified for: V
IN
= +2.7V to +6.0V.
Parameters
Temperature Ranges
Operating Junction Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Thermal Package Resistances
Thermal Resistance, MSOP8
Thermal Resistance, DFN8
θ
JA
θ
JA
—
—
208
41
—
—
°C/W
°C/W
Typical 4-Layer Board
Typical 4-Layer Board with Vias
T
A
T
A
T
J
-40
-65
—
—
—
—
+125
+150
+150
°C
°C
°C
Transient
Steady State
Sym
Min
Typ
Max
Units
Conditions
DS21333B-page 4
©
2005 Microchip Technology Inc.
TC1302A/B
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated,
V
IN
= V
R
+1V, I
OUT1
= I
OUT2
= 100 µA, C
IN
= 4.7 µF, C
OUT1 =
C
OUT2
= 1 µF (X5R or X7R),
C
BYPASS
= 0 pF, SHDN1 = SHDN2 > V
IH
, T
A
= +25°C.
350
Quiescent Current (µA)
300
250
200
150
100
50
0
2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
Input Voltage (V)
2.60
2.7
3
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7
Input Voltage (V)
6
V
OUT2
Active
V
OUT2
SHDN
TC1302B
Output Voltage (V)
T
J
= +25°C
I
OUT1
= I
OUT2
= 0 µA
V
OUT1
Active
3.00
2.90
V
OUT1
T
J
= +25°C
I
OUT1
= 100 mA
I
OUT2
= 50 mA
2.80
2.70
V
OUT2
FIGURE 2-1:
Voltage.
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
2.7
3
Quiescent Current vs. Input
FIGURE 2-4:
Voltage.
2.90
2.85
Output Voltage (V)
Output Voltage vs. Input
SHDN Threshold (V)
V
OUT1
ON
2.80
2.75
2.70
2.65
2.60
2.55
2.50
V
OUT2
T
J
= +25°C
I
OUT1
= 300 mA
I
OUT2
= 100 mA
OFF
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7
Input Voltage (V)
6
2.7
3
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7
Input Voltage (V)
6
FIGURE 2-2:
vs. Input Voltage.
140
130
120
110
100
90
80
70
60
50
40
SHDN Voltage Threshold
FIGURE 2-5:
Voltage.
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
0
50
Output Voltage vs. Input
TC1302B
V
OUT2
Active
Quiescent Current (µA)
V
IN
= 4.2V
I
OUT1
= I
OUT2
= 0 µA
V
OUT1
Active
Dropout Voltage V
OUT1
(mV)
V
R1
= 2.8V
V
R2
= 2.6V
I
OUT2
= 100 µA
T
J
= +125°C
T
J
= +25°C
V
OUT2
SHDN
T
J
= - 40°C
-40 -25 -10
5
20 35 50 65 80 95 110 125
100
150
I
OUT1
(mA)
200
250
300
Junction Temperature (°C)
FIGURE 2-3:
Quiescent Current vs.
Junction Temperature.
FIGURE 2-6:
Current (V
OUT1
).
Dropout Voltage vs. Output
©
2005 Microchip Technology Inc.
DS21333B-page 5
