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TC1N60PTA

Rectifier Diode,

器件类别:分立半导体    二极管   

厂商名称:Tak Cheong

厂商官网:http://www.takcheong.com/

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器件参数
参数名称
属性值
厂商名称
Tak Cheong
Reach Compliance Code
compliant
ECCN代码
EAR99
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®
TAK CHEONG
500 mW DO-35 Hermetically
Sealed Glass Small Signal
Schottky Diodes
AXIAL LEAD
DO35
Absolute Maximum Ratings
Symbol
T
A
= 25°C unless otherwise noted
Value
1N60
1N60P
45
50
500
V
mA
mA
L
TC1Nxxxx
Parameter
Units
DEVICE MARKING DIAGRAM
V
RRM
I
F
I
FSM
T
STG
/T
J
Peak Reverse Voltage
Forward Continuous Current
Peak Forward Surge Current (t =1S)
Storage and Junction Temperature Range
40
30
150
L
1N
xxx
: Logo
: Device Code
-65 to +125
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable
RoHS Compliant
Solder Hot Dip Tin (Sn) Terminal Finish.
Cathode Indicated By Polarity Band
ELECTRICAL SYMBOL
Cathode
Anode
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Condition
Type
Min
1N60
I
F
=1mA
Limits
Typ
0.32
0.24
0.65
0.65
0.1
0.5
2.0
pF
1N60P
1N60
1
1N60P
nS
6.0
Max
0.5
Volts
1N60P
1N60
1N60P
1N60
0.5
1.0
1.0
0.5
uA
1N60P
1N60
1.0
Volts
Volts
Unit
V
F
Forward Voltage
I
F
=30mA
I
F
=200mA
I
R
Reverse Leakage Current
V
R
=15V
V
R
=1V, f=1MHz
V
R
=10V, f=1MHz
C
J
Junction Capacitance
T
RR
Reverse Recovery Time
I
F
=I
R
=1mA,
Rc=100Ω
Irr=1mA,
Number: DB-046
December 2006 / A
Page 1
TC1N60/TC1N60P
PRELIMINARY DATASHEET
®
TAK CHEONG
PRELIMINARY DATASHEET
Package Outline
Package
Case Outline
DO-35
DO-35
DIM
Min
Millimeters
Max
Min
Inches
Max
A
B
C
D
0.46
0.55
0.018
0.022
3.05
5.08
0.120
0.200
25.40
38.10
1.000
1.500
1.53
2.28
0.060
0.090
Notes:
1.
2.
All dimensions are within JEDEC standard.
DO35 polarity denoted by cathode band.
This datasheet presents technical data of Tak Cheong’s Schottky Diodes. Complete specifications for the individual devices are
provided in the form of datasheets. A comprehensive Selector Guide is included to simplify the task of choosing the best set of
components required for a specific application. For additional information, please visit our website
http://www.takcheong.com.
Although information in this datasheet has been carefully checked, no responsibility for the inaccuracies can be assumed by Tak
Cheong. Please consult your nearest Tak Cheong’s sales office for further assistance.
Tak Cheong reserves the right to make changes without further notice to any products herein to further improve reliability,
function or design, cost and productivity.
TAK CHEONG
Number: DB-046
December 2006 / A
®
and
are registered trademarks of Tak Cheong Electronics (Holdings) Co., Ltd.
Page 2
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参数对比
与TC1N60PTA相近的元器件有:1N60P、1N60。描述及对比如下:
型号 TC1N60PTA 1N60P 1N60
描述 Rectifier Diode, Rectifier Diode, Schottky, 1 Element, 0.05A, 45V V(RRM), Silicon, DO-35, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 0.03A, 40V V(RRM), Silicon, DO-35, ROHS COMPLIANT, HERMETIC SEALED PACKAGE-2
厂商名称 Tak Cheong Tak Cheong Tak Cheong
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
零件包装代码 - DO-35 DO-35
包装说明 - ROHS COMPLIANT, HERMETIC SEALED PACKAGE-2 O-LALF-W2
针数 - 2 2
外壳连接 - ISOLATED ISOLATED
配置 - SINGLE SINGLE
二极管元件材料 - SILICON SILICON
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 - DO-35 DO-35
JESD-30 代码 - O-LALF-W2 O-LALF-W2
JESD-609代码 - e3 e3
元件数量 - 1 1
端子数量 - 2 2
最高工作温度 - 125 °C 125 °C
最低工作温度 - -65 °C -65 °C
最大输出电流 - 0.05 A 0.03 A
封装主体材料 - GLASS GLASS
封装形状 - ROUND ROUND
封装形式 - LONG FORM LONG FORM
认证状态 - Not Qualified Not Qualified
最大重复峰值反向电压 - 45 V 40 V
最大反向恢复时间 - 0.001 µs 0.001 µs
表面贴装 - NO NO
技术 - SCHOTTKY SCHOTTKY
端子面层 - TIN TIN
端子形式 - WIRE WIRE
端子位置 - AXIAL AXIAL
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