TC2014/2015/2185
50 mA, 100 mA, 150 mA CMOS LDOs with
Shutdown and Reference Bypass
Features
•
•
•
•
•
•
•
•
•
•
•
•
Low Supply Current: 80 µA (Max)
Low Dropout Voltage: 140 mV (Typ.) @ 150 mA
High-Output Voltage Accuracy: ±0.4% (Typ.)
Standard or Custom Output Voltages
Power-Saving Shutdown Mode
Reference Bypass Input for Ultra Low-Noise
Operation
Fast Shutdown Response Time: 60 µsec (Typ.)
Overcurrent and Overtemperature Protection
Space-Saving 5-Pin SOT-23A Package
Pin-Compatible Upgrades for Bipolar Regulators
Wide Operating Temperature Range:
-40°C to +125°C
Standard Output Voltage Options:
- 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V,
3.3V, 5.0V
General Description
The TC2014, TC2015 and TC2185 are high-accuracy
(typically ±0.4%) CMOS upgrades for bipolar Low
Drop-out Regulators (LDOs), such as the LP2980.
Total supply current is typically 55 µA; 20 to 60 times
lower than in bipolar regulators.
The key features of the device include low noise oper-
ation (plus bypass reference), low dropout voltage
– typically 45 mV for the TC2014, 90 mV for the
TC2015, and 140 mV for the TC2185, at full load – and
fast response to step changes in load. Supply current
is reduced to 0.5 µA (max) and V
OUT
falls to zero when
the shutdown input is low. These devices also
and
overtemperature
incorporate
overcurrent
protection.
The TC2014, TC2015 and TC2185 are stable with an
output capacitor of 1 µF and have maximum output
currents of 50 mA, 100 mA and 150 mA, respectively.
For higher-output
current
versions, see the TC1107
(DS21356), TC1108 (DS21357) and TC1173
(DS21362) (I
OUT
= 300 mA) data sheets.
Applications
•
•
•
•
•
•
•
Battery-Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulator for SMPS
Pagers
Typical Application
V
IN
+
1
V
IN
V
OUT
5
+
1 µF
1 µF
V
OUT
Related Literature
2
• Application Notes: AN765, AN766, AN776 and
AN792
GND
TC2014
TC2015
TC2185
Package Type
5-Pin SOT-23A
V
OUT
5
Bypass
4
TC2014
TC2015
TC2185
1
V
IN
2
3
Shutdown Control
(from Power Control Logic)
3
SHDN
Bypass
4
0.01 µF
Reference
Bypass Cap
(Optional)
GND SHDN
2001-2012 Microchip Technology Inc.
DS21662F-page 1
TC2014/2015/2185
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings †
Input Voltage ................................................................... 7.0V
Output Voltage ....................................... (– 0.3) to (V
IN
+ 0.3)
Operating Temperature ......................... – 40°C < T
J
< 125°C
Storage Temperature.................................. – 65°C to +150°C
Maximum Voltage on Any Pin ................ V
IN
+0.3V to – 0.3V
Maximum Junction Temperature ...................... ............ 150°C
ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise specified, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
BOLDFACE
type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Input Operating Voltage
Maximum Output
Current
Sym
V
IN
I
OUTMAX
Min
2.7
50
100
150
Output Voltage
V
OUT
Temperature
Coefficient
Line Regulation
Load Regulation
(Note 4)
Dropout Voltage
V
OUT
TCV
OUT
V
OUT
/V
IN
V
OUT
/V
OUT
V
IN
– V
OUT
V
R
– 2.0%
—
—
—
-1.0
-2.0
—
—
—
—
Supply Current
Shutdown Supply
Current
Power Supply
Rejection Ratio
Output Short Circuit
Current
I
IN
I
INSD
PSRR
I
OUTSC
—
—
—
—
Typ
—
—
—
—
V
R
± 0.4%
20
40
0.05
0.33
0.43
2
45
90
140
55
0.05
55
160
Max
6.0
—
—
—
V
R
+ 2.0%
—
—
0.5
+1.0
+2.0
—
70
140
210
80
0.5
—
300
µA
µA
dB
mA
mV
%
%
(V
R
+ 1V) < V
IN
< 6V
TC2014;TC2015:
I
L
= 0.1 mA to I
OUTMAX
TC2185:
I
L
= 0.1 mA to I
OUTMAX
(Note 4)
Note 5
I
L
= 100 µA
I
L
= 50 mA
TC2015; TC2185
I
L
= 100 mA
TC2185
SHDN = V
IH
, I
L
= 0
SHDN = 0V
F
1 kHz, Cbypass = 0.01 µF
V
OUT
= 0V
I
L
= 150 mA
V
Units
V
mA
Note 1
TC2014
TC2015
TC2185
Note 2
Conditions
ppm/°C
Note 3
Note 1:
The minimum V
IN
has to meet two conditions: V
IN
= 2.7V and V
IN
= V
R
+ V
DROPOUT
.
2:
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
–
6
V
OUTMAX
–
V
OUTMIN
10
TCV
OUT
=
---------------------------------------------------------------------------
-
V
OUT
T
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5:
Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
MAX
at V
IN
= 6V for T = 10 ms.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
JA
).
8:
Time required for V
OUT
to reach 95% of V
R
(output voltage setting), after V
SHDN
is switched from 0 to V
IN
.
DS21662F-page 2
2001-2012 Microchip Technology Inc.
TC2014/2015/2185
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise specified, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
BOLDFACE
type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Thermal Regulation
Thermal Shutdown Die
Temperature
Output Noise
Response Time
(from Shutdown Mode)
(Note 8)
SHDN Input
SHDN Input High
Threshold
SHDN Input Low
Threshold
V
IH
V
IL
60
—
—
—
—
15
%V
IN
%V
IN
V
IN
= 2.5V to 6.0V
V
IN
= 2.5V to 6.0V
Sym
V
OUT
/P
D
T
SD
eN
T
R
Min
—
—
—
—
Typ
0.04
160
200
60
Max
—
—
—
—
Units
V/W
°C
nV/Hz I
L
= I
OUTMAX
, F = 10 kHz
470 pF from Bypass to GND
µs
V
IN
= 4V, I
L
= 30 mA,
C
IN
= 1 µF, C
OUT
= 10 µF
Conditions
Note 6, Note 7
Note 1:
The minimum V
IN
has to meet two conditions: V
IN
= 2.7V and V
IN
= V
R
+ V
DROPOUT
.
2:
V
R
is the regulator output voltage setting. For example: V
R
= 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
TCV
OUT
–
6
V
OUTMAX
–
V
OUTMIN
10
=
---------------------------------------------------------------------------
-
V
OUT
T
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the Thermal Regulation specification.
5:
Dropout Voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I
MAX
at V
IN
= 6V for T = 10 ms.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction-to-air (i.e. T
A
, T
J
,
JA
).
8:
Time required for V
OUT
to reach 95% of V
R
(output voltage setting), after V
SHDN
is switched from 0 to V
IN
.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
DD
= +2.7V to +6.0V and V
SS
= GND.
Parameters
Temperature Ranges:
Extended Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances:
Thermal Resistance, 5L-SOT-23
JA
—
255
—
°C/W
T
A
T
A
T
A
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
2001-2012 Microchip Technology Inc.
DS21662F-page 3
TC2014/2015/2185
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
63.0
V
IN
= 6.0V
1.820
Output Voltage (V)
V
R
= 1.8V
C
OUT
= 3.3 µF
V
IN
= 2.8V
V
IN
= 6.0V
60.0
I
DD
(µA)
57.0
54.0
51.0
48.0
45.0
1.815
1.810
1.805
1.800
1.795
1.790
1.785
V
R
= 1.8V
C
OUT
= 3.3 µF
I
L
= 150 mA
V
IN
= 2.8V
5
20
35
50
65
80
95
110
125
-40
-25
-10
5
20
35
50
65
80
-40
-25
-10
95
110
110
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 2-1:
Temperature.
0.8
Load Regulation (%)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
2.8
3.2
3.6
V
R
= 1.8V
C
OUT
= 3.3 µF
I
L
= 150 mA
Supply Current vs. Junction
FIGURE 2-4:
Temperature.
1.82
Output Voltage vs. Junction
T
A
= -45°C
1.815
T
A
= +25°C
T
A
= +25°C
T
A
= -45°C
T
A
= +125°C
Output Voltage (V)
1.81
1.805
1.8
1.795
1.79
1.785
V
R
= 1.8V
C
OUT
= 3.3 µF
I
L
= 150 mA
T
A
= +125°C
4
4.4
4.8
5.2
5.6
6
2.8
3.2
3.6
4
4.4
4.8
5.2
5.6
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-2:
Voltage.
1.810
Output Voltage (V)
1.805
1.800
1.795
1.790
Load Regulation vs. Supply
FIGURE 2-5:
Voltage.
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
Output Voltage vs. Supply
Dropout Voltage (V)
V
R
= 1.8V
C
OUT
= 3.3 µF
I
L
= 0.1 mA
V
IN
= 2.8V
V
IN
= 6.0V
V
R
= 1.8V
C
OUT
= 3.3 μF
I
L
= 150 mA
I
L
= 100 mA
I
L
= 50 mA
I
L
= 20 mA
Note: Dropout Voltage is not
a tested parameter for 1.8V.
V
IN
(min)
!
2.7V
-40
-25
-10
5
20
35
50
65
80
95
110
125
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 2-3:
Temperature.
Output Voltage vs. Junction
FIGURE 2-6:
Dropout Voltage vs.
Junction Temperature.
DS21662F-page 4
2001-2012 Microchip Technology Inc.
125
5
20
35
50
65
80
-40
-25
-10
95
125
6
TC2014/2015/2185
Note:
Unless otherwise indicated, V
IN
= V
R
+ 1V, I
L
= 100 µA, C
OUT
= 3.3 µF, SHDN > V
IH
, T
A
= +25°C.
60.0
58.0
56.0
I
DD
(µA)
54.0
52.0
50.0
48.0
46.0
44.0
5
20
35
50
65
80
95
110
125
-40
-25
-10
2.705
2.700
V
IN
= 6.0V
V
IN
= 2.8V
V
IN
= 3.7V
Output Voltage (V)
V
R
= 2.7V
C
OUT
= 3.3 µF
2.695
2.690
2.685
2.680
2.675
2.670
2.665
5
20
35
50
65
80
95
110
5.8
110
125
125
-40
-25
-10
V
R
= 2.7V
C
OUT
= 3.3 µF
I
L
= 150 mA
V
IN
= 6.0V
Temperature (°C)
Junction Temperature (°C)
FIGURE 2-7:
Temperature.
0.5
Load Regulation (%)
Supply Current vs. Junction
FIGURE 2-10:
Temperature.
2.705
Output Voltage vs. Junction
Output Voltage (V)
0.3
0.1
-0.1
-0.3
-0.5
3.7
4
4.3
4.6
4.9
5.2
V
R
= 2.7V
C
OUT
= 3.3 µF
I
L
= 150 mA
T
A
= -45°C
T
A
= +25°C
2.7
2.695
2.69
2.685
2.68
2.675
2.67
2.665
V
R
= 2.7V
C
OUT
= 3.3 µF
I
L
= 150 mA
T
A
= +25°C
T
A
= -45°C
T
A
= +125°C
T
A
= +125°C
5.5
5.8
3.7
4
4.3
4.6
4.9
5.2
5.5
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-8:
Voltage.
2.690
2.688
2.686
2.684
2.682
2.680
2.678
2.676
2.674
2.672
2.670
Load Regulation vs. Supply
FIGURE 2-11:
Voltage.
0.160
Output Voltage vs. Supply
V
IN
= 6.0V
Dropout Voltage (V)
V
R
= 2.7V
C
OUT
= 3.3 µF
I
L
= 150 mA
Output Voltage (V)
0.120
I
L
= 100 mA
V
IN
= 3.7V
0.080
I
L
= 50 mA
V
R
= 2.7V
C
OUT
= 3.3 µF
I
L
= 0.1 mA
0.040
0.000
I
L
= 20 mA
5
20
35
50
65
80
95
5
20
35
50
65
80
110
125
-40
-25
-10
-40
-25
Junction Temperature (°C)
-10
Junction Temperature (°C)
FIGURE 2-9:
Temperature.
Output Voltage vs. Junction
FIGURE 2-12:
Dropout Voltage vs.
Junction Temperature.
2001-2012 Microchip Technology Inc.
DS21662F-page 5
95
嵌入式系统
