TC4420/TC4429
6A High-Speed MOSFET Drivers
Features
• Latch-Up Protected: Will Withstand >1.5A
Reverse Output Current
• Logic Input Will Withstand Negative Swing Up To
5V
• ESD Protected: 4 kV
• Matched Rise and Fall Times:
- 25 ns (2500 pF load)
• High Peak Output Current: 6A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability: 10,000 pF
• Short Delay Time: 55 ns (typ.)
• CMOS/TTL Compatible Input
• Low Supply Current With Logic ‘1’ Input:
- 450 µA (typ.)
• Low Output Impedance: 2.5
• Output Voltage Swing to Within 25 mV of Ground
or V
DD
• Space-Saving 8-Pin SOIC and 8-Pin 6x5 DFN
Packages
General Description
The TC4420/TC4429 are 6A (peak), single-output
MOSFET drivers. The TC4429 is an inverting driver
(pin-compatible with the TC429), while the TC4420 is a
non-inverting driver. These drivers are fabricated in
CMOS for lower power and more efficient operation
versus bipolar drivers.
Both devices have TTL/CMOS compatible inputs that
can be driven as high as V
DD
+ 0.3V or as low as –5V
without upset or damage to the device. This eliminates
the need for external level-shifting circuitry and its
associated cost and size. The output swing is rail-to-rail,
ensuring better drive voltage margin, especially during
power-up/power-down sequencing. Propagational
delay time is only 55 ns (typ.) and the output rise and fall
times are only 25 ns (typ.) into 2500 pF across the
usable power supply range.
Unlike other drivers, the TC4420/TC4429 are virtually
latch-up proof. They replace three or more discrete
components, saving PCB area, parts and improving
overall system reliability.
Applications
•
•
•
•
Switch-Mode Power Supplies
Motor Controls
Pulse Transformer Driver
Class D Switching Amplifiers
Package Types
(1)
8-Pin CERDIP/
PDIP/SOIC
V
DD
INPUT
NC
GND
1
2
3
4
8
TC4420
V
DD
OUTPUT
OUTPUT
GND
TC4429
V
DD
OUTPUT
OUTPUT
GND
V
DD
1
INPUT 2
NC 3
GND 4
8-Pin DFN
(2)
8
TC4420 TC4429
V
DD
V
DD
5-Pin TO-220
Tab is
Common
to V
DD
TC4420
TC4429
7
6
5
TC4420
TC4429
7
6
5
OUTPUT OUTPUT
OUTPUT OUTPUT
GND
GND
TC4420
TC4429
Note 1:
2:
Duplicate pins must both be connected for proper operation.
Exposed pad of the DFN package is electrically isolated.
2002-2012 Microchip Technology Inc.
INPUT
GND
V
DD
GND
OUTPUT
DS21419D-page 1
TC4420/TC4429
Functional Block Diagram
V
DD
500 µA
300 mV
Output
TC4429
Inverting
Input
4.7V
TC4420
Non-Inverting
GND
Effective
Input
C = 38 pF
DS21419D-page 2
2002-2012 Microchip Technology Inc.
TC4420/TC4429
1.0
ELECTRICAL
CHARACTERISTICS
†
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings†
Supply Voltage ..................................................... +20V
Input Voltage .................................. – 5V to V
DD
+ 0.3V
Input Current (V
IN
> V
DD
)................................... 50 mA
Power Dissipation (T
A
70°C)
5-Pin TO-220 .................................................... 1.6W
CERDIP ....................................................... 800 mW
DFN ............................................ ...................Note
2
PDIP ............................................................ 730 mW
SOIC............................................................ 470 mW
Package Power Dissipation (T
A
25°C)
5-Pin TO-220 (With Heatsink) ........................ 12.5W
Thermal Impedances (To Case)
5-Pin TO-220 R
J-C
...................................... 10°C/W
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input
Voltage
Logic ‘0’, Low Input Voltage
Input Voltage Range
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
2:
I
S
V
DD
—
—
4.5
0.45
55
—
1.5
150
18
mA
µA
V
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
25
25
55
55
35
35
75
75
ns
ns
ns
ns
Figure 4-1,
C
L
= 2,500 pF
Figure 4-1,
C
L
= 2,500 pF
Figure 4-1
Figure 4-1
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
—
—
—
2.1
1.5
6.0
> 1.5
—
0.025
2.8
2.5
—
—
V
V
A
A
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
Duty cycle2%, t
300
µsec
V
IH
V
IL
V
IN
I
IN
2.4
—
–5
–10
1.8
1.3
—
—
—
0.8
V
DD
+0.3
+10
V
V
V
µA
0VV
IN
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Package power dissipation is dependent on the copper pad area on the PCB.
2002-2012 Microchip Technology Inc.
DS21419D-page 3
TC4420/TC4429
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise noted, over operating temperature range with 4.5V
V
DD
18V.
Parameters
Input
Logic ‘1’, High Input
Voltage
Logic ‘0’, Low Input Voltage
Input Voltage Range
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
Operating Input Voltage
Note 1:
I
S
V
DD
—
—
4.5
0.45
60
—
3
400
18
mA
µA
V
V
IN
= 3V
V
IN
= 0V
t
R
t
F
t
D1
t
D2
—
—
—
—
32
34
50
65
60
60
100
100
ns
ns
ns
ns
Figure 4-1,
C
L
= 2,500 pF
Figure 4-1,
C
L
= 2,500 pF
Figure 4-1
Figure 4-1
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
3
2.3
—
0.025
5
5
V
V
DC TEST
DC TEST
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
V
IN
I
IN
2.4
—
–5
–10
—
—
—
—
—
0.8
V
DD
+ 0.3
+10
V
V
V
µA
0VV
IN
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameters
Temperature Ranges
Specified Temperature Range (C)
Specified Temperature Range (I)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
Thermal Resistance, 8L-CERDIP
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
JA
JA
JA
JA
JA
—
—
—
—
—
71
150
33.2
125
155
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
Typical four-layer board
with vias to ground plane.
T
A
T
A
T
A
T
A
T
J
T
A
0
–25
–40
–40
—
–65
—
—
—
—
—
—
+70
+85
+85
+125
+150
+150
°C
°C
°C
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
DS21419D-page 4
2002-2012 Microchip Technology Inc.
TC4420/TC4429
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V
V
DD
18V.
120
100
100
80
60
C
L
= 10,000 pF
80
Time (nsec)
Time (nsec)
60
C
L
= 10,000 pF
C
L
= 4700 pF
40
40
C
L
= 4700 pF
C
L
= 2200 pF
C
L
= 2200 pF
20
0
20
5
7
9
11
13
15
0
5
7
9
11
13
15
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-1:
Voltage.
100
80
60
Time (nsec)
Rise Time vs. Supply
FIGURE 2-4:
Voltage.
100
80
60
Time (nsec)
Fall Time vs. Supply
40
V
DD
= 5V
40
V
DD
= 5V
V
DD
= 12V
V
DD
= 18V
V
DD
= 12V
V
DD
= 18V
20
20
10
1000
Capcitive Load (pF)
10,000
10
1000
Capacitive Load (pF)
10,000
FIGURE 2-2:
Load.
50
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
84
Fall Time vs. Capacitive
C
L
= 2200 pF
V
DD
= 18V
40
Supply Current (mA)
V
DD
= 15V
70
56
42
Delay Time (nsec)
t
D2
30
t
D1
20
500 kHz
28
10
200 kHz
14
20 kHz
0
–60
–20
20
60
TA (°C)
100
140
0
0
100
1000
Capacitive Load (pF)
10,000
FIGURE 2-3:
Temperature.
Propagation Delay Time vs.
FIGURE 2-6:
Capacitive Load.
Supply Current vs.
2002-2012 Microchip Technology Inc.
DS21419D-page 5
