TC4423A/TC4424A/TC4425A
3A Dual High-Speed Power MOSFET Drivers
Features
• High Peak Output Current: 4.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 1800 pF in 12 ns
• Short Delay Times: 40 ns (typical)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 1.0 mA (maximum)
- With Logic ‘0’ Input – 150 µA (maximum)
• Low Output Impedance: 2.5Ω (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• Pin compatible with the TC4423/TC4424/TC4425
and TC4426A/TC4427A/TC4428A devices
• Space-saving 8-Pin 150 mil body SOIC and 8-Pin
6x5 DFN Packages
General Description
The TC4423A/TC4424A/TC4425A devices are a family
of dual-output 3A buffers/MOSFET drivers. These
devices are improved versions of the earlier TC4423/
TC4424/TC4425 dual-output 3A driver family. This
improved version features higher peak output current
drive capability, lower shoot-throught current, matched
rise/fall times and propagation delay times. The
TC4423A/TC4424A/TC4425A devices are pin-
compatible with the existing TC4423/TC4424/TC4425
family. An 8-pin SOIC package option has been added
to the family. The 8-pin DFN package option offers
increased power dissipation capability for driving
heavier capacitive or resistive loads.
The TC4423A/TC4424A/TC4425A MOSFET drivers
can easily charge and discharge 1800 pF gate
capacitance in under 20 ns, provide low enough
impedances in both the on and off states to ensure the
MOSFET’s intended state will not be affected, even by
large transients.
The TC4423A/TC4424A/TC4425A inputs may be
driven directly from either TTL or CMOS (2.4V to 18V).
In addition, the 300 mV of built-in hysteresis provides
noise immunity and allows the device to be driven from
slow rising or falling waveforms.
The TC4423A/TC4424A/TC4425A dual-output 3A
MOSFET driver family is offerd with a -40
o
C to +125
o
C
temperature rating, making it useful in any wide
temperature range application.
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Direct Drive of Small DC Motors
Package Types
8-Pin PDIP/SOIC TC4423A TC4424A TC4425A
NC
IN A
GND
IN B
1
8
2
TC4423A
7
3
TC4424A
6
4
TC4425A
5
16-Pin SOIC (Wide
)
NC
IN A
NC
GND
GND
NC
IN B
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
TC4423A TC4424A TC4425A
NC
OUT A
OUT A
V
DD
V
DD
OUT B
OUT B
NC
NC
OUT A
OUT A
V
DD
V
DD
OUT B
OUT B
NC
NC
OUT A
OUT A
V
DD
V
DD
OUT B
OUT B
NC
NC
OUT A
V
DD
OUT B
NC
OUT A
V
DD
OUT B
NC
OUT A
V
DD
OUT B
TC4423A
TC4424A
TC4425A
8-Pin 6x5 DFN
(1
)
NC
1
IN A
2
GND
3
IN B
4
TC4423A
TC4424A
TC4425A
8
7
6
5
TC4423A TC4424A TC4425A
NC
OUT A
V
DD
OUT B
NC
OUT A
V
DD
OUT B
NC
OUT A
V
DD
OUT B
Note 1:
Exposed pad of the DFN package is electrically isolated.
2:
Duplicate pins must both be connected for proper operation
.
©
2007 Microchip Technology Inc.
DS21998B-page 1
TC4423A/TC4424A/TC4425A
Functional Block Diagram
(1)
Inverting
750 µA
300 mV
Output
V
DD
Input
Effective
Input C = 20 pF
(Each Input)
GND
4.7V
Non-inverting
TC4423A Dual Inverting
TC4424A Dual Non-inverting
TC4425A Inverting / Non-inverting
Note 1:
Unused inputs should be grounded.
DS21998B-page 2
©
2007 Microchip Technology Inc.
TC4423A/TC4424A/TC4425A
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage, IN A or IN B .......... (V
DD
+ 0.3V) to (GND – 5V)
Package Power Dissipation (T
A
=50°C)
8L PDIP .......................................................................1.2W
8L SOIC.................................................................... 0.61W
16L SOIC.....................................................................1.1W
8L DFN ....................................................................
Note 3
DC CHARACTERISTICS (NOTE 2)
Electrical Specifications:
Unless otherwise indicated, T
A
= +25°C, with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
3:
V
DD
I
S
I
S
4.5
—
—
—
1.0
0.15
18
2.0
0.25
V
mA
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
t
R
t
F
t
D1
t
D2
—
—
—
—
12
12
40
41
21
21
48
48
ns
ns
ns
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
—
—
—
2.2
2.8
4.5
>1.5
—
0.025
3.0
3.5
—
—
V
V
Ω
Ω
A
A
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
10V≤ V
DD
≤18V
(Note 2)
Duty cycle
≤
2%, t
≤
300 µsec.
V
IH
V
IL
I
IN
V
IN
2.4
—
–1
-5
1.5
1.3
—
—
—
0.8
1
V
DD
+0.3
V
V
µA
V
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Switching times ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area on the PCB.
©
2007 Microchip Technology Inc.
DS21998B-page 3
TC4423A/TC4424A/TC4425A
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications:
Unless otherwise indicated, operating temperature range with 4.5V
≤
V
DD
≤
18V.
Parameters
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
I
S
—
—
2.0
0.2
3.0
0.3
mA
V
IN
= 3V (Both inputs)
V
IN
= 0V (Both inputs)
t
R
t
F
t
D1
t
D2
—
—
—
—
20
22
50
50
31
31
66
66
ns
ns
ns
ns
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
Figure 4-1, Figure 4-2,
C
L
= 1800 pF
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
3.1
3.7
—
0.025
6
7
V
V
Ω
Ω
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
IH
V
IL
I
IN
2.4
—
–10
—
—
—
—
0.8
+10
V
V
µA
0V
≤
V
IN
≤
V
DD
Sym
Min
Typ
Max
Units
Conditions
Note 1:
Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
≤
V
DD
≤
18V.
Parameters
Temperature Ranges
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 16L-SOIC
θ
JA
θ
JA
θ
JA
θ
JA
—
—
—
—
33.2
84.6
163
90
—
—
—
—
°C/W
°C/W
°C/W
°C/W
Typical four-layer board with
vias to ground plane
T
A
T
J
T
A
–40
—
–65
—
—
—
+125
+150
+150
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
DS21998B-page 4
©
2007 Microchip Technology Inc.
TC4423A/TC4424A/TC4425A
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, T
A
= +25°C with 4.5V <= V
DD
<= 18V.
80
70
Rise Time (ns)
50
40
30
20
10
0
4
6
8
10
12
14
16
18
Supply Voltage (V)
470 pF
3,300 pF
1,800 pF
1,000 pF
80
70
4,700 pF
4700 pF
3300 pF
Fall Time (ns)
60
60
50
40
30
20
10
0
4
6
1000 pF
1800 pF
470 pF
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-1:
Voltage.
60
50
Rise Time (ns)
40
30
20
10
0
100
Rise Time vs. Supply
FIGURE 2-4:
Voltage.
70
60
Fall Time vs. Supply
5V
10V
Fall Time (ns)
5V
50
40
30
20
10
15V
10V
15V
1000
Capacitive Load (pF)
10000
0
100
1000
Capacitive Load (pF)
10000
FIGURE 2-2:
Load.
24
22
20
Time (ns)
18
16
14
12
10
-40 -25 -10
5
t
RISE
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
145
Propagation Delay (ns)
Fall Time vs. Capacitive
C
LOAD
= 1800 pF
V
DD
= 12V
125
105
85
65
45
25
t
D2
t
D1
C
LOAD
= 1800 pF
t
FALL
20 35 50 65 80 95 110 125
Temperature ( C)
o
2
3
4
5
6
7
8
9
10
Input Amplitude (V)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
FIGURE 2-6:
Amplitude.
Propagation Delay vs. Input
©
2007 Microchip Technology Inc.
DS21998B-page 5
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