型号
- 型号
- 关键词
IC 4M X 4 EDO DRAM, 60 ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24, Dynamic RAM
厂商名称：Toshiba(东芝)
厂商官网：http://toshiba-semicon-storage.com/
下载文档| 型号 | TC5117405CSJ-60 | TC5117405CSJ-40 | TC5117405CST-40 | TC5117405CSJ-50 | TC5117405CST-50 | TC5117405CST-60 |
|---|---|---|---|---|---|---|
| 描述 | IC 4M X 4 EDO DRAM, 60 ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24, Dynamic RAM | IC 4M X 4 EDO DRAM, 40 ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24, Dynamic RAM | IC 4M X 4 EDO DRAM, 40 ns, PDSO24, 0.300 INCH, PLASTIC, TSOP-26/24, Dynamic RAM | IC 4M X 4 EDO DRAM, 50 ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24, Dynamic RAM | IC 4M X 4 EDO DRAM, 50 ns, PDSO24, 0.300 INCH, PLASTIC, TSOP-26/24, Dynamic RAM | IC 4M X 4 EDO DRAM, 60 ns, PDSO24, 0.300 INCH, PLASTIC, TSOP-26/24, Dynamic RAM |
| 厂商名称 | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) |
| 零件包装代码 | SOJ | SOJ | TSOP | SOJ | TSOP | TSOP |
| 包装说明 | 0.300 INCH, PLASTIC, SOJ-26/24 | 0.300 INCH, PLASTIC, SOJ-26/24 | 0.300 INCH, PLASTIC, TSOP-26/24 | 0.300 INCH, PLASTIC, SOJ-26/24 | 0.300 INCH, PLASTIC, TSOP-26/24 | 0.300 INCH, PLASTIC, TSOP-26/24 |
| 针数 | 24 | 24 | 26/24 | 24 | 26/24 | 26/24 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| 访问模式 | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
| 最长访问时间 | 60 ns | 40 ns | 40 ns | 50 ns | 50 ns | 60 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 代码 | R-PDSO-J24 | R-PDSO-J24 | R-PDSO-G24 | R-PDSO-J24 | R-PDSO-G24 | R-PDSO-G24 |
| 长度 | 17.15 mm | 17.15 mm | 17.14 mm | 17.15 mm | 17.14 mm | 17.14 mm |
| 内存密度 | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit |
| 内存集成电路类型 | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | SOJ | TSOP2 | SOJ | TSOP2 | TSOP2 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 |
| 座面最大高度 | 3.7 mm | 3.7 mm | 1.2 mm | 3.7 mm | 1.2 mm | 1.2 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | J BEND | J BEND | GULL WING | J BEND | GULL WING | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 宽度 | 7.7 mm | 7.7 mm | 7.7 mm | 7.7 mm | 7.7 mm | 7.7 mm |