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TC58CYG2S0HRAIG

NAND闪存 1.8V 4Gb 24nm Serial NAND

器件类别:半导体    存储器 IC    NAND闪存   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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器件参数
参数名称
属性值
厂商名称
Toshiba(东芝)
产品种类
NAND闪存
安装风格
SMD/SMT
封装 / 箱体
WSON-8
系列
TC58CY
存储容量
4 Gbit
接口类型
SPI
组织
512 M x 8
电源电压-最小
1.7 V
电源电压-最大
1.95 V
最小工作温度
- 40 C
最大工作温度
+ 85 C
封装
Tray
存储类型
NAND
产品
NAND Flash
工厂包装数量
480
文档预览
TC58CYG2S0HxAIx
TOSHIBA
Serial Interface NAND
Technical Data Sheet
Rev. 1.1
2016 – 11 – 08
TOSHIBA
Storage & Electronic Devices Solutions
Memory Division
©2016 TOSHIBA CORPORATION
0
2016-11-08C
TC58CYG2S0HxAIx
CONTENTS
1.
1.1.
1.2.
1.3.
2.
2.1.
2.2.
2.3.
2.4.
2.5.
2.6.
3.
3.1.
3.2.
3.3.
3.4.
3.5.
3.6.
3.7.
3.8.
3.9.
4.
4.1.
4.2.
4.2.1.
4.2.2.
4.2.3.
4.2.4.
4.3.
4.4.
4.4.1.
4.4.2.
4.4.3.
4.5.
4.6.
4.7.
4.8.
4.9.
4.9.1.
4.9.2.
4.10.
4.11.
4.11.1.
4.12.
4.13.
4.14.
4.15.
4.16.
4.16.1.
4.16.2.
4.16.3.
4.16.4.
4.16.5.
5.
5.1.
5.2.
6.
6.1.
6.2.
Introduction .............................................................................................................................................. 4
General Description ................................................................................................................................. 4
Definitions and Abbreviations ................................................................................................................. 4
Features.................................................................................................................................................... 5
Memory Organization .............................................................................................................................. 6
Pin Descriptions ....................................................................................................................................... 6
Pin Assignment (Top View) ...................................................................................................................... 6
Block Diagram .......................................................................................................................................... 7
Cell Layout ............................................................................................................................................... 7
Addressing ................................................................................................................................................ 8
Valid Blocks .............................................................................................................................................. 8
Physical Interface..................................................................................................................................... 9
Absolute Maximum Rating ...................................................................................................................... 9
Capacitance .............................................................................................................................................. 9
Recommended DC Operating Conditions ............................................................................................... 9
Signal Timing ......................................................................................................................................... 10
AC Characteristics ................................................................................................................................. 12
DC Operating Characteristics ............................................................................................................... 12
Programming, Reading and Erasing Characteristics........................................................................... 13
Power ON/OFF Sequence ...................................................................................................................... 13
AC Test Condition .................................................................................................................................. 13
Command Description and Device Operation....................................................................................... 14
Command Set ......................................................................................................................................... 14
Page Read Operation ............................................................................................................................. 15
Read Cell Array (13h) ............................................................................................................................ 15
Read Buffer (03h or 0Bh) ....................................................................................................................... 16
Read Buffer x2 (3Bh).............................................................................................................................. 17
Read Buffer x4 (6Bh).............................................................................................................................. 18
Page Read Operation - High Speed Mode ............................................................................................. 18
Page Program Operation ....................................................................................................................... 19
Program Load (02h) ............................................................................................................................... 19
Program Execute (10h) .......................................................................................................................... 20
Program Load Random Data (84h) ....................................................................................................... 21
Internal Data Move Operation .............................................................................................................. 21
Block Erase (D8h) .................................................................................................................................. 22
Reset (FFh or FEh) ................................................................................................................................ 23
Write Enable (06h) / Write Disable (04h) .............................................................................................. 24
Set Feature (1Fh) / Get Feature (0Fh) .................................................................................................. 25
Set Feature (1Fh) ................................................................................................................................... 27
Get Feature (0Fh) .................................................................................................................................. 27
Block Lock Operation ............................................................................................................................. 28
Block Protection Operation (One Time Program)................................................................................. 28
Protect Execute (2Ah) ............................................................................................................................ 29
Parameter Page Read Operation........................................................................................................... 30
Read ID (9Fh) ......................................................................................................................................... 31
Unique ID Read Operation .................................................................................................................... 31
Bad Block Inhibit ................................................................................................................................... 31
Internal ECC .......................................................................................................................................... 32
ECC Switch ............................................................................................................................................ 32
ECC Status ............................................................................................................................................. 32
ECC Bit Flip Count Detection ............................................................................................................... 32
ECC Bit Flip Count Report.................................................................................................................... 33
ECC Maximum Bit Flip Count Report .................................................................................................. 34
Package Information .............................................................................................................................. 35
WSON8 (P-WSON8-0608-1.27-003) ...................................................................................................... 35
SOP16 (P-SOP16-1111-1.27-001) ........................................................................................................... 35
Application Notes ................................................................................................................................... 36
Prohibition of Unspecified Commands .................................................................................................. 36
Restriction of Commands while in the Busy State ............................................................................... 36
©2016 TOSHIBA CORPORATION
1
2016-11-08C
TC58CYG2S0HxAIx
6.3.
Addressing for Page Program Operation .............................................................................................. 36
6.4.
Several programming Cycles on the Same Page (Partial Page Program) ........................................... 36
6.5.
Power Off Timing ................................................................................................................................... 37
6.6.
Invalid Blocks ......................................................................................................................................... 37
6.7.
Failure Phenomena ................................................................................................................................ 38
6.8.
Reliability Guidance .............................................................................................................................. 39
7.
Revision History ..................................................................................................................................... 40
RESTRICTIONS ON PRODUCT USE .................................................................................................................... 41
©2016 TOSHIBA CORPORATION
2
2016-11-08C
TC58CYG2S0HxAIx
LIST of FIGURES
Figure 1. WSON8 Pin Assignment (Top View) .......................................................................................................... 6
Figure 2. SOP16 Pin Assignment (Top View) ............................................................................................................ 6
Figure 3. Block Diagram ............................................................................................................................................ 7
Figure 4. Cell Layout .................................................................................................................................................. 7
Figure 5. Addressing................................................................................................................................................... 8
Figure 6. SPI Timing ................................................................................................................................................ 10
Figure 7. Serial Input Timing .................................................................................................................................. 10
Figure 8. Serial Output Timing ............................................................................................................................... 10
Figure 9. Hold Timing .............................................................................................................................................. 11
Figure 10. WP Timing (Example) ............................................................................................................................ 11
Figure 11. Power ON/OFF Sequence ....................................................................................................................... 13
Figure 12. Page Read from Cell Array to Buffer ..................................................................................................... 15
Figure 13. Page Read from Buffer Timing .............................................................................................................. 16
Figure 14. Page Read from Buffer x2 Timing.......................................................................................................... 17
Figure 15. Page Read from Buffer x4 Timing.......................................................................................................... 18
Figure 16. Program Load ......................................................................................................................................... 19
Figure 17. Program Execute Timing........................................................................................................................ 20
Figure 18. Program Load Random Data Timing..................................................................................................... 21
Figure 19. Block Erase Timing ................................................................................................................................ 22
Figure 20. Reset Timing ........................................................................................................................................... 23
Figure 21. Write Enable ........................................................................................................................................... 24
Figure 22. Write Disable Timing.............................................................................................................................. 24
Figure 23. Set Feature Timing ................................................................................................................................. 27
Figure 24. Get Feature Timing ................................................................................................................................ 27
Figure 25. Protect Execute Timing .......................................................................................................................... 29
Figure 26. Read ID Timing....................................................................................................................................... 31
LIST of TABLES
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Table 14
Table 15
Table 16
Table 17
Table 18
Table 19
Table 20
Table 21
Table 22
Table 23
Table 24
Table 25
Table 26
Table 27
Table 28
Pin Descriptions .......................................................................................................................................... 6
Valid Blocks ................................................................................................................................................. 8
Absolute Maximum Rating ......................................................................................................................... 9
Capacitance (T
OPR
= 25℃, f = 1MHz)......................................................................................................... 9
Recommended DC Operating Condition .................................................................................................... 9
AC Characteristics (T
OPR
= -40 to 85℃, VCC = 1.7 to 1.95V) ................................................................. 12
DC & Operating Characteristics (T
OPR
= -40 to 85℃, VCC = 1.7 to 1.95V) ........................................... 12
Programming, Reading and Erasing Characteristics (T
OPR
= -40 to 85℃, VCC = 1.7 to 1.95V)........... 13
Power on Timing ....................................................................................................................................... 13
AC Test Condition ................................................................................................................................... 13
Command Set .......................................................................................................................................... 14
Feature Table .......................................................................................................................................... 25
Feature Table - A0h Address Description .............................................................................................. 25
Feature Table - B0h Address Description .............................................................................................. 26
Feature Table - C0h Address Description .............................................................................................. 26
Block Lock Setting .................................................................................................................................. 28
Block Protection Setting ......................................................................................................................... 28
Block Number for Block Protection ........................................................................................................ 28
Parameter Page....................................................................................................................................... 30
ID Table ................................................................................................................................................... 31
Page Assignment ..................................................................................................................................... 32
Definition of 528 bytes Data Pair ........................................................................................................... 32
Bit Flip Count Detection Setting (BFD) ................................................................................................ 32
Bit Flip Count Detection Status (BFS) (Feature Table - 20h Address Description) ............................ 33
Bit Flip Count Report for Sector 0 (BFR) .............................................................................................. 33
Sector Definition (BFR) .......................................................................................................................... 34
Maximum Bit Flip Count (MBF) ............................................................................................................ 34
Maximum Bit Flip Count Sector (MFS) ................................................................................................. 34
©2016 TOSHIBA CORPORATION
3
2016-11-08C
TC58CYG2S0HxAIx
1. Introduction
1.1. General Description
The TC58CYG2S0HxAIx is a serial interface NAND Flash for embedded applications which supports the SPI
interface.
The TC58CYG2S0HxAIx is organized as (4096 + 128) bytes
×
64 pages
×
2048 blocks. The device has a 4224
byte data buffer which allows program and read data to be transferred between the buffer and the memory cell
array in 4224-byte increments. The Erase Operation is implemented in a single block unit (256 Kbytes + 8 Kbytes:
4224 bytes
×
64 pages). The device has the high speed mode for sequential Page Read Operation. When high
speed mode is enabled, the average of tR is shortened.
The TC58CYG2S0HxAIx has ECC logic on the chip and 8bit read errors for each (512 bytes + 16 bytes) can be
corrected. The internal ECC logic has detailed bit flip count report.
1.2. Definitions and Abbreviations
SPI
Serial Peripheral Interface.
Address
The address is comprised of a column address (CA) with 13bits and a row address (RA) with 17bits. The row
address identifies the page and block to be accessed. The column address identifies the byte within a page to access.
Column
The byte location within the page.
Row
Refer to the block and page to be accessed.
Sector
The 512 bytes unit in a page.
Page
The smallest addressable unit for the Read and the Program operations.
Block
Consists of multiple pages and is the smallest addressable unit for the Erase Operation.
Data Buffer
Buffer used to transfer data to and from the cell array.
Cell Array
Memory cell of NAND flash
Device
The packaged NAND unit.
©2016 TOSHIBA CORPORATION
4
2016-11-08C
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参数对比
与TC58CYG2S0HRAIG相近的元器件有:TC58CYG2S0HQAIE。描述及对比如下:
型号 TC58CYG2S0HRAIG TC58CYG2S0HQAIE
描述 NAND闪存 1.8V 4Gb 24nm Serial NAND NAND闪存 4Gb 1.8V SLC NAND闪存 Serial
厂商名称 Toshiba(东芝) Toshiba(东芝)
产品种类 NAND闪存 NAND闪存
系列 TC58CY TC58CY
封装 Tray Tray
存储类型 NAND NAND
产品 NAND Flash NAND Flash
工厂包装数量 480 168
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