TC74HCT157AP/AF
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HCT157AP,TC74HCT157AF
Quad 2-Channel Multiplexer
The TC74HCT157A is a high speed CMOS 2-CHANNEL
MULTIPLEXERs fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
LSTTL while maintaining the CMOS low power dissipation.
This device may be used as a level converter for interfacing
TTL or NMOS to High Speed CMOS. The inputs are compatible
with TTL, NMOS and CMOS output voltage levels.
When
STROBE
is held high, selection of data is inhibited
and all the outputs become low.
The SELECT decoding determines whether the A or B inputs
get transferred to their corresponding Y outputs.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
TC74HCT157AP
TC74HCT157AF
Features
•
•
•
•
•
•
•
•
High speed: t
pd
= 21 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 4
μA
(max) at Ta = 25°C
Compatible with TTL outputs: V
IH
= 2.0 V (min)
V
IL
= 0.8 V (max)
Wide interfacing ability: LSTTL, NMOS, CMOS
Output drive capability: 10 LSTTL loads
Symmetrical output impedance: |I
OH
| = I
OL
= 4 mA (min)
∼
Balanced propagation delays: t
pLH
−
t
pHL
Pin and function compatible with 74LS157
Weight
DIP16-P-300-2.54A
SOP16-P-300-1.27A
: 1.00 g (typ.)
: 0.18 g (typ.)
Pin Assignment
1
2012-02-29
TC74HCT157AP/AF
IEC Logic Symbol
Truth Table
Inputs
ST
H
L
L
L
L
SELECT
X
L
L
H
H
A
X
L
H
X
X
B
X
X
X
L
H
Output
L
L
H
L
H
X: Don’t care
Absolute Maximum Ratings (Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−
0.5 to 7
−
0.5 to V
CC
+
0.5
−
0.5 to V
CC
+
0.5
±
20
±
20
±
25
±
50
Unit
V
V
V
mA
mA
mA
mA
mW
°C
500 (DIP) (Note 2)/180 (SOP)
−
65 to 150
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta
= −40
to 65°C. From Ta
=
65 to 85°C a derating factor of
−10
mW/°C shall be
applied until 300 mW.
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2012-02-29
TC74HCT157AP/AF
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
t
r
, t
f
Rating
4.5 to 5.5
0 to V
CC
0 to V
CC
−
40 to 85
Unit
V
V
V
°C
ns
0 to 500
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Test Condition
Characteristics
Symbol
V
CC
(V)
⎯
⎯
Ta
=
25°C
Min
2.0
⎯
Ta
= −
40 to
85°C
Max
⎯
Unit
Typ.
⎯
⎯
Min
2.0
⎯
Max
⎯
High-level input
voltage
Low-level input
voltage
High-level output
voltage
Low-level output
voltage
Input leakage
current
Quiescent supply
current
V
IH
V
IL
V
OH
4.5 to
5.5
4.5 to
5.5
4.5
4.5
4.5
4.5
5.5
5.5
5.5
V
V
V
0.8
⎯
⎯
0.8
⎯
⎯
V
IN
I
OH
= −
20
μ
A
=
V
IH
or
I
OH
= −
4 mA
V
IL
I
OL
=
20
μ
A
V
IN
=
V
IH
or
I
OL
=
4 mA
V
IL
V
IN
=
V
CC
or GND
V
IN
=
V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
4.4
4.18
⎯
⎯
⎯
⎯
⎯
4.5
4.31
0.0
0.17
⎯
⎯
⎯
4.4
4.13
⎯
⎯
⎯
⎯
⎯
V
OL
I
IN
I
CC
I
C
0.1
0.26
±
0.1
0.1
0.33
±
1.0
V
μ
A
μ
A
4.0
2.0
40.0
2.9
mA
AC Characteristics
(C
L
=
15 pF, V
CC
=
5 V, Ta
=
25°C, input: t
r
=
t
f
=
6 ns)
Characteristics
Output transition time
Propagation delay time
(A, B-Y)
Propagation delay time
( STROBE -Y)
Propagation delay time
(SELECT-Y)
Symbol
t
TLH
t
THL
t
pLH
t
pHL
t
pLH
t
pHL
t
pLH
t
pHL
Test Condition
⎯
Min
⎯
Typ.
4
Max
8
Unit
ns
⎯
⎯
19
30
ns
⎯
⎯
19
30
ns
⎯
⎯
21
32
ns
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2012-02-29
TC74HCT157AP/AF
AC Characteristics
(C
L
=
50 pF, input: t
r
=
t
f
=
6 ns)
Test Condition
Characteristics
Symbol
V
CC
(V)
⎯
Ta
=
25°C
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Ta
= −
40 to
85°C
Max
15
14
35
32
35
32
37
34
10
⎯
Unit
Typ.
8
7
23
20
23
20
25
21
5
59
Min
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
19
18
44
40
44
40
46
42
10
⎯
Output transition time
Propagation delay
time
(A, B-Y)
Propagation delay
time
( STROBE -Y)
Propagation delay
time
(SELECT-Y)
Input capacitance
Power dissipation
capacitance
t
TLH
t
THL
t
pLH
t
pHL
t
pLH
t
pHL
t
pLH
t
pHL
C
IN
C
PD
(Note)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
⎯
⎯
ns
⎯
ns
⎯
ns
⎯
ns
pF
pF
Note:
C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC
(opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
/4 (per bit)
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TC74HCT157AP/AF
Package Dimensions
Weight: 1.00 g (typ.)
5
2012-02-29
