TC74VCX00FT/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VCX00FT, TC74VCX00FK
Low-Voltage Quad 2-Input NAND Gate with 3.6-V Tolerant Inputs and Outputs
The TC74VCX00FT/FK is a high-performance CMOS 2-input
NAND gate which is guaranteed to operate from 1.2-V to 3.6-V.
Designed for use in 1.5V, 1.8V, 2.5V or 3.3V systems, it achieves
high-speed operation while maintaining the CMOS low power
dissipation.
It is also designed with overvoltage tolerant inputs and outputs
up to 3.6 V.
All inputs are equipped with protection circuits against static
discharge.
TC74VCX00FT
Features (Note)
•
•
Low-voltage operation: V
CC
= 1.2 to 3.6 V
High-speed operation : t
pd
= 2.8 ns (max) (V
CC
= 3.0 to 3.6 V)
: t
pd
= 3.7 ns (max) (V
CC
= 2.3 to 2.7 V)
: t
pd
= 7.4 ns (max) (V
CC
= 1.65 to 1.95 V)
: t
pd
= 14.8 ns (max) (V
CC
= 1.4 to 1.6 V)
: t
pd
= 37.0 ns (max) (V
CC
= 1.2 V)
•
Output current: I
OH
/I
OL
= ±24 mA (min) (V
CC
= 3.0 V)
: I
OH
/I
OL
= ±18 mA (min) (V
CC
= 2.3 V)
: I
OH
/I
OL
= ±6 mA (min) (V
CC
= 1.65 V)
: I
OH
/I
OL
= ±2 mA (min) (V
CC
= 1.4 V)
•
•
•
•
Latch-up performance:
−300
mA
ESD performance: Machine model
≥ ±200
V
Human body model
≥ ±2000
V
Package: TSSOP and VSSOP (US)
Power-down protection provided on all inputs and outputs
TC74VCX00FK
Weight
TSSOP14-P-0044-0.65A
VSSOP14-P-0030-0.50
: 0.06 g (typ.)
: 0.02 g (typ.)
Note:
Electrical Characteristics of V
CC
=1.5±0.1V and 1.2V apply only to products whose Lot Code is over "3 12"
Start of commercial production
1998-11
1
2014-03-01
TC74VCX00FT/FK
Pin Assignment
(top view)
1A
1B
1Y
2A
2B
2Y
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
4B
4A
4Y
3B
3A
3Y
IEC Logic Symbol
1A
1B
2A
2B
3A
3B
4A
4B
1
2
4
5
9
10
12
13
&
3
6
8
11
1Y
2Y
3Y
4Y
Truth Table
Inputs
A
L
L
H
H
B
L
H
L
H
Outputs
Y
H
H
H
L
Absolute Maximum Ratings (Note 1)
Characteristics
Power supply voltage
DC input voltage
Symbol
V
CC
V
IN
Rating
−0.5
to 4.6
−0.5
to 4.6
−0.5
to 4.6
DC output voltage
V
OUT
(Note 2)
−0.5
to V
CC
+
0.5
(Note 3)
Input diode current
Output diode current
DC output current
Power dissipation
DC V
CC
/ground current
Storage temperature
I
IK
I
OK
I
OUT
P
D
I
CC
/I
GND
T
stg
−50
±50
±50
180
±100
−65
to 150
(Note 4)
mA
mA
mA
mW
mA
°C
V
Unit
V
V
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: V
CC
=
0 V
Note 3: High or low state. I
OUT
absolute maximum rating must be observed.
Note 4: V
OUT
<
GND, V
OUT
>
V
CC
2
2014-03-01
TC74VCX00FT/FK
Operating Ranges (Note 1)
Characteristics
Power supply voltage
Input voltage
Output voltage
Symbol
V
CC
V
IN
V
OUT
Rating
1.2 to 3.6
−0.3
to 3.6
0 to 3.6 (Note 2)
0 to V
CC
(Note 3)
±24
Output current
I
OH
/I
OL
±18
±6
±2
Operating temperature
Input rise and fall time
T
opr
dt/dv
−40
to 85
0 to 10
(Note 8)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
°C
ns/V
mA
Unit
V
V
V
Note 1: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Note 2: V
CC
=
0 V
Note 3: High or low state
Note 4: V
CC
=
3.0 to 3.6 V
Note 5: V
CC
=
2.3 to 2.7 V
Note 6: V
CC
=
1.65 to 1.95 V
Note 7: V
CC
=
1.4 to 1.6 V
Note 8: V
IN
=
0.8 to 2.0 V, V
CC
=
3.0 V
Electrical Characteristics
DC Characteristics
(Ta
= −40
to 85°C, 2.7 V
<
V
CC
≤
3.6 V)
Characteristics
H-level
L-level
Symbol
V
IH
V
IL
Test Condition
⎯
⎯
I
OH
= −100 μA
H-level
V
OH
V
IN
=
V
IH
or V
IL
I
OH
= −12
mA
I
OH
= −18
mA
Output voltage
I
OH
= −24
mA
I
OL
=
100
μA
L-level
V
OL
V
IN
=
V
IH
I
OL
=
12 mA
I
OL
=
18 mA
I
OL
=
24 mA
Input leakage current
Power-off leakage current
Quiescent supply current
Increase in I
CC
per input
I
IN
I
OFF
I
CC
ΔI
CC
V
IN
=
0 to 3.6 V
V
IN
, V
OUT
=
0 to 3.6 V
V
IN
=
V
CC
or GND
V
CC
≤
V
IN
≤
3.6 V
V
IH
=
V
CC
−
0.6 V
V
CC
(V)
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
2.7
3.0
3.0
2.7 to 3.6
2.7
3.0
3.0
2.7 to 3.6
0
2.7 to 3.6
2.7 to 3.6
2.7 to 3.6
Min
2.0
⎯
V
CC
−
0.2
2.2
2.4
2.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.8
⎯
⎯
⎯
⎯
0.2
0.4
0.4
0.55
±5.0
10.0
20.0
±20.0
750
μA
μA
μA
V
Unit
Input voltage
V
3
2014-03-01
TC74VCX00FT/FK
DC Characteristics
(Ta
= −40
to 85°C, 2.3 V
≤
V
CC
≤
2.7 V)
Characteristics
H-level
L-level
Symbol
V
IH
V
IL
Test Condition
⎯
⎯
I
OH
= −100 μA
H-level
Output voltage
V
OH
V
IN
=
V
IH
or V
IL
I
OH
= −6
mA
I
OH
= −12
mA
I
OH
= −18
mA
I
OL
=
100
μA
L-level
V
OL
V
IN
=
V
IH
I
OL
=
12 mA
I
OL
=
18 mA
Input leakage current
Power-off leakage current
Quiescent supply current
I
IN
I
OFF
I
CC
V
IN
=
0 to 3.6 V
V
IN
, V
OUT
=
0 to 3.6 V
V
IN
=
V
CC
or GND
V
CC
≤
V
IN
≤
3.6 V
V
CC
(V)
2.3 to 2.7
2.3 to 2.7
2.3 to 2.7
2.3
2.3
2.3
2.3 to 2.7
2.3
2.3
2.3 to 2.7
0
2.3 to 2.7
2.3 to 2.7
Min
1.6
⎯
V
CC
−
0.2
2.0
1.8
1.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.7
⎯
⎯
⎯
⎯
0.2
0.4
0.6
±5.0
10.0
20.0
±20.0
μA
μA
μA
V
Unit
Input voltage
V
DC Characteristics
(Ta
= −40
to 85°C, 1.65 V
≤
V
CC
<
2.3 V)
Characteristics
Symbol
Test Condition
⎯
⎯
I
OH
= −100 μA
I
OH
= −6
mA
L-level
Input leakage current
Power-off leakage current
Quiescent supply current
V
OL
I
IN
I
OFF
I
CC
V
IN
=
V
IH
V
IN
=
0 to 3.6 V
V
IN
, V
OUT
=
0 to 3.6 V
V
IN
=
V
CC
or GND
V
CC
≤
V
IN
≤
3.6 V
I
OL
=
100
μA
I
OL
=
6 mA
V
CC
(V)
1.65 to 2.3
1.65 to 2.3
1.65
1.65
1.65
1.65
1.65 to 2.3
0
1.65 to 2.3
1.65 to 2.3
Min
0.65
×
V
CC
⎯
V
CC
−
0.2
1.25
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.2
×
V
CC
⎯
⎯
0.2
0.3
±5.0
10.0
20.0
±20.0
μA
μA
μA
V
V
Unit
H-level
Input voltage
L-level
V
IH
V
IL
H-level
Output voltage
V
OH
V
IN
=
V
IH
or V
IL
4
2014-03-01
TC74VCX00FT/FK
DC Characteristics
(Ta
= −40
to 85°C, 1.4 V
≤
V
CC
<
1.65 V)
Characteristics
Symbol
Test Condition
⎯
⎯
I
OH
= −100 μA
I
OH
= −2
mA
L-level
Input leakage current
Power-off leakage current
Quiescent supply current
V
OL
I
IN
I
OFF
I
CC
V
IN
=
V
IH
V
IN
=
0 to 3.6 V
V
IN
, V
OUT
=
0 to 3.6 V
V
IN
=
V
CC
or GND
V
CC
≤
V
IN
≤
3.6 V
I
OL
=
100
μA
I
OL
=
2 mA
V
CC
(V)
1.4 to 1.65
1.4 to 1.65
1.4 to 1.65
1.4
1.4 to 1.65
1.4
1.4 to 1.65
0
1.4 to 1.65
1.4 to 1.65
Min
0.65
×
V
CC
⎯
V
CC
−
0.2
1.05
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.05
×
V
CC
⎯
⎯
0.05
0.35
±5.0
10.0
20.0
±20.0
μA
μA
μA
V
V
Unit
H-level
Input voltage
L-level
V
IH
V
IL
H-level
Output voltage
V
OH
V
IN
=
V
IH
or V
IL
DC Characteristics
(Ta
= −40
to 85°C, 1.2 V
≤
V
CC
<
1.4 V)
Characteristics
Symbol
Test Condition
⎯
⎯
V
IN
=
V
IH
or V
IL
V
IN
=
V
IH
V
IN
=
0 to 3.6 V
V
IN
, V
OUT
=
0 to 3.6 V
V
IN
=
V
CC
or GND
V
CC
≤
V
IN
≤
3.6 V
I
OH
= −100 μA
I
OL
=
100
μA
V
CC
(V)
1.2 to 1.4
1.2 to 1.4
1.2
1.2
1.2
0
1.2
1.2
Min
0.8
×
V
CC
⎯
V
CC
−
0.1
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.05
×
V
CC
⎯
0.05
±5.0
10.0
20.0
±20.0
μA
μA
μA
V
Unit
H-level
Input voltage
L-level
H-level
L-level
Input leakage current
Power-off leakage current
Quiescent supply current
V
IH
V
IL
V
OH
V
OL
I
IN
I
OFF
I
CC
Output voltage
V
5
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