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TC7MBL3253CFK

CMOS Digital Integrated Circuit Silicon Monolithic

器件类别:逻辑    逻辑   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Toshiba(东芝)
零件包装代码
SOIC
包装说明
,
针数
16
Reach Compliance Code
unknow
JESD-30 代码
R-PDSO-G16
逻辑集成电路类型
MULTIPLEXER AND DEMUX/DECODER
端子数量
16
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
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TC7MBL3253CFT/FK/FTG
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7MBL3253CFT,TC7MBL3253CFK,TC7MBL3253CFTG
Dual 1-of-4 FET Multiplexer/Demultiplexer
The TC7MBL3253C is a Low Voltage/Low Capacitance CMOS
2bit 1-of-4 Multiplexer/Demultiplexer. The low on-resistance of
the switch allows connections to be made with minimal
propagation delay time.
This device consists of two individual four-inputs
multiplexer/demultiplexer with common select input (S1, S0) and
output enable (
OE
). The A input is connected to the B1 to B4
outputs as determined by the combination of both the select
input (S1, S0) and output enable (
OE
). When the output enable
(
OE
) input is held at “H” level, the switches are open regardless
of the state of the select inputs, and a high-impedance state
exists between the switches.
All inputs are equipped with protection circuits against static
discharge.
TC7MBL3253CFT
TC7MBL3253CFK
Features
Operating voltage: V
CC
= 1.65
to
3.6 V
On-capacitance:
C
I/O
= 13 pF Switch On (typ.) @ V
CC
= 3 V
On-resistance:
R
ON
= 9
Ω
(typ.) @ V
CC
= 3 V, V
I/O
= 0 V
ESD performance: Machine model
≥ ±200
V
Human body model
≥ ±2000
V
Power-down protection for inputs (
OE
and I/O)
Package: TSSOP16, VSSOP16 (US16), VQON16
Note: When mounting VQON package, the type of recommended
flux is RA or RMA.
TC7MBL3253CFTG
Weight
TSSOP16-P-0044-0.65A:
VSSOP16-P-0030-0.50:
VQON16-P-0303-0.50:
0.06 g (typ.)
0.02 g (typ.)
0.013 g (typ.)
Pin Assignment
(top view)
FT (TSSOP16-P-0044-0.65A)
FK (VSSOP16-P-0030-0.50)
FTG (VQON16-P-0303-0.50)
1OE
S1
1B4
1B3
1B2
1B1
1A
GND
1
2
3
4
5
6
7
8
(top view)
16
15
14
13
12
11
10
9
V
CC
S1 1OE V
CC
2OE
16
1B4 1
1B3 2
1B2 3
1B1 4
15
14
13
12
S0
2OE
S0
2B4
2B3
2B2
11 2B4
10 2B3
9 2B2
2B1
2A
5
6
7
2A
8
2B1
1A GND
1
2009-02-02
TC7MBL3253CFT/FK/FTG
Truth Table
Inputs
OE
L
L
L
L
H
S1
L
L
H
H
X
S0
L
H
L
H
X
Function
A port
=
B1 port
A port
=
B2 port
A port
=
B3 port
A port
=
B4 port
Disconnect
System Diagram
1A
1B1
1B2
1B3
1B4
2A
2B1
2B2
2B3
2B4
S0
S1
1OE
2OE
2
2009-02-02
TC7MBL3253CFT/FK/FTG
Absolute Maximum Ratings (Note)
Characteristic
Power supply range
Control pin input voltage
Switch terminal I/O voltage
Clump diode current
Switch I/O current
Power dissipation
DC V
CC
/GND current
Storage temperature
( OE , S1, S0)
V
CC
=0 V or Switch=Off
Switch=On
Symbol
V
CC
V
IN
V
S
V
S
I
IK
I
S
P
D
I
CC
/I
GND
T
stg
Rating
0.5 to 4.6
0.5 to 4.6
0.5 to 4.6
0.5 to V
CC
+0.5
50
Unit
V
V
V
mA
mA
mW
mA
°C
50
180
±
100
65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristic
Power supply voltage
Control pin input voltage
Switch terminal I/O voltage
Operating temperature
Input rise and fall time
(
OE
, S1, S0)
V
CC
=0 V or Switch=Off
Switch=On
Symbol
V
CC
V
IN
V
S
V
S
T
opr
dt/dv
Rating
1.65 to 3.6
0 to 3.6
0 to 3.6
0 to V
CC
40 to 85
Unit
V
V
V
°C
ns/V
0 to 10
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
3
2009-02-02
TC7MBL3253CFT/FK/FTG
Electrical Characteristics
DC Characteristics
(Ta
= −40~85°C)
Parameter
Symbol
Test Condition
V
CC
(V)
Input voltage
(
OE
, S1, S0)
“H” level
“L” level
V
IH
V
IL
I
IN
I
OFF
I
SZ
V
IN
=
0 to 3.6 V
Min
0.7
×
V
CC
Typ.
Max
Unit
1.65 to 3.6
1.65 to 3.6
1.65 to 3.6
0
1.65 to 3.6
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
3.0
3.0
3.0
2.3
2.3
2.3
1.65
1.65
3.6
0.3
×
V
CC
±
1.0
V
Input leakage current
( OE , S1, S0)
Power-off leakage current
Off-state leakage current
(switch off)
μ
A
μ
A
μ
A
OE
, S, A, B
=
0 to 3.6 V
A, B
=
0 to V
CC
, OE
=
V
CC
V
IS
=
0 V, I
IS
=
30 mA
V
IS
=
3.0 V, I
IS
=
30 mA
V
IS
=
2.4 V, I
IS
=
15 mA
10
±
1.0
9
18
20
10
23
25
12
29
13
24
28
15
32
35
18
40
10
μ
A
Ω
On resistance
(Note2)
R
ON
V
IS
=
0 V, I
IS
=
24 mA
V
IS
=
2.3 V, I
IS
=
24 mA
V
IS
=
2.0 V, I
IS
=
15 mA
V
IS
=
0 V, I
IS
=
4 mA
V
IS
=
1.65 V, I
IS
=
4 mA
Quiescent supply current
I
CC
V
IN
=
V
CC
or GND, I
OUT
=
0
Note1: All typical values are at Ta=25°C.
Note2: Measured by the voltage drop between A and B pins at the indicated current through the switch.
On resistance is determined by the lower of the voltages on the two (A or B) pins
4
2009-02-02
TC7MBL3253CFT/FK/FTG
AC Characteristics
(Ta
= −40~85°C)
Characteristics
Symbol
Test Condition
V
CC
(V)
Output enable time
(
OE
to bus)
t
pZL
t
pZH
3.3
±
0.3
Figure 1, Figure 2
2.5
±
0.2
1.8
±
0.15
3.3
±
0.3
Figure 1, Figure 2
2.5
±
0.2
1.8
±
0.15
3.3
±
0.3
Output disable time
( OE to bus)
t
pLZ
t
pHZ
Figure 1, Figure 2
2.5
±
0.2
1.8
±
0.15
3.3
±
0.3
Output disable time
(S1, S0 to bus)
t
pLZ
t
pHZ
Figure 1, Figure 2
2.5
±
0.2
1.8
±
0.15
Min
Max
6
7
11
6
7
11
6
7
11
6
7
11
Unit
ns
Output enable time
(S1, S0 to bus)
t
pZL
t
pZH
ns
ns
ns
Capacitive Characteristics
(Ta
=
25°C)
Characteristics
Control pin input capacitance
( OE , S1, S0)
Switch terminal capacitance
(Switch Off)
Switch terminal capacitance
(Switch Off)
Switch terminal capacitance
(Switch On)
Switch terminal capacitance
(Switch On)
(Bn)
(A)
(Bn)
(A)
Symbol
Test Condition
V
CC
(V)
C
IN
C
I/O
C
I/O
C
I/O
C
I/O
V
IN
=
0 V
(Note)
(Note)
(Note)
(Note)
(Note)
3.0
3.0
3.0
3.0
3.0
5
4
9
13
13
pF
pF
pF
pF
pF
Typ.
Unit
OE
=
V
CC
, V
IS
= 0 V
OE
=
V
CC
, V
IS
= 0 V
OE
=
GND, V
IS
= 0 V
OE
=
GND, V
IS
= 0 V
Note: This parameter is guaranteed by design.
5
2009-02-02
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参数对比
与TC7MBL3253CFK相近的元器件有:TC7MBL3253CFT。描述及对比如下:
型号 TC7MBL3253CFK TC7MBL3253CFT
描述 CMOS Digital Integrated Circuit Silicon Monolithic CMOS Digital Integrated Circuit Silicon Monolithic
是否Rohs认证 符合 符合
厂商名称 Toshiba(东芝) Toshiba(东芝)
零件包装代码 SOIC TSSOP
针数 16 16
Reach Compliance Code unknow unknow
JESD-30 代码 R-PDSO-G16 R-PDSO-G16
逻辑集成电路类型 MULTIPLEXER AND DEMUX/DECODER MULTIPLEXER AND DEMUX/DECODER
端子数量 16 16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
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