TC7SET00F/FU
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SET00F, TC7SET00FU
2 Input NAND Gate
Features
•
•
•
•
•
High Speed : t
pd
= 4.2ns (typ) at V
CC
= 5 V, C
L
= 15pF
Low Power Dissipation : I
CC
= 2μA (Max) at Ta = 25℃
Compatible with TTL outputs
5.5-V tolerant inputs.
Balanced Propagation Delays
: t
pLH
≒
t
pHL
TC7SET00FU
TC7SET00F
: V
IL
= 0.8 V (max)
V
IH
= 2.0 V (min)
(SMV)
Marking
Product Name
G
1
Weight
SSOP5-P-0.95
SSOP5-P-0.65A
(USV)
: 0.016 g (typ.)
: 0.006 g (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Lead temperature (10s)
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
T
L
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to VCC+0.5
−20
±20
(Note 1)
±25
±50
200
−65
to 150
260
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
Pin Assignment
(top view)
IN B
1
5
V
CC
IN A
2
GND
3
4
OUT Y
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: V
OUT
< GND, V
OUT
> V
CC
1
2009-09-29
TC7SET00F/FU
IEC Logic Symbol
IN A
&
IN B
OUT Y
Truth Table
Input
A
L
L
H
H
B
L
H
L
H
Output
Y
H
H
H
L
Operating Ranges
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Rating
4.5 to 5.5
0 to 5.5
0 to V
CC
−40
to 85
0 to 20
Unit
V
V
V
°C
ns/V
2
2009-09-29
TC7SET00F/FU
Electrical Characteristics
DC Characteristics
Characteristics
High-level
input voltage
Low-level
input voltage
High-level
output voltage
Low-level
output voltage
Input leakage current
Symbol
Test Condition
Ta
=
25°C
V
CC
(V)
4.5 to
5.5
4.5 tp
5.5
V
IN
=
V
IH
or
V
IL
V
IN
=
V
IH
I
OH
= −50μA
I
OH
= −8mA
I
OL
=
50
μA
I
OL
=
8 mA
4.5
4.5
4.5
4.5
0 to 5.5
5.5
5.5
Min
2.0
Typ.
⎯
Max
⎯
Ta
= −40
to 85°C
Min
2.0
Max
⎯
Unit
V
IH
V
V
IL
⎯
4.4
3.94
⎯
⎯
⎯
⎯
⎯
⎯
4.5
⎯
0.0
⎯
⎯
⎯
⎯
0.8
⎯
⎯
0.10
0.36
±0.1
2.0
1.35
⎯
4.4
3.80
⎯
⎯
⎯
⎯
⎯
0.8
⎯
⎯
0.10
0.44
±1.0
20.0
1.50
V
V
OH
V
V
OL
I
IN
I
CC
V
μA
μA
mA
V
IN
=
5.5 V or GND
V
IN
=
V
CC
or GND
PER INPUT
: V
IN
=3.4V
Quiescent supply current
I
CCT
OTHER INPUT:V
CC
or GND
3
2009-09-29
TC7SET00F/FU
AC Characteristics
(Input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
t
pLH
t
pHL
C
IN
C
PD
(Note 2)
Test Condition
Ta
=
25°C
V
CC
(V)
5.0±0.5
C
L
(pF)
15
50
Min
⎯
⎯
⎯
⎯
Typ.
4.2
6.5
4
17
Max
6.2
9.0
10
⎯
Ta
= −40
to 85°C
Min
1.0
1.0
⎯
⎯
Max
7.1
10.3
10
⎯
Unit
Propagation delay time
Input capacitance
Power dissipation capacitance
ns
pF
pF
Note 2: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr.)
=
C
PD
½V
CC
½f
IN
+
I
CC
4
2009-09-29
TC7SET00F/FU
Package Dimensions
Weight: 0.016 g (typ.)
5
2009-09-29
