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TC7SH34FS

NON-INVERT BUFFER

器件类别:逻辑    逻辑   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Toshiba(东芝)
零件包装代码
SON
包装说明
0.35 MM PITCH, PLASTIC, SON-5
针数
5
Reach Compliance Code
unknow
系列
LV/LV-A/LVX/H
JESD-30 代码
R-PDSO-F5
长度
1 mm
逻辑集成电路类型
BUFFER
功能数量
1
输入次数
1
端子数量
5
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
VSOF
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, VERY THIN PROFILE
传播延迟(tpd)
12 ns
认证状态
Not Qualified
座面最大高度
0.5 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
2 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
FLAT
端子节距
0.35 mm
端子位置
DUAL
宽度
0.8 mm
文档预览
TC7SH34FS
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC7SH34FS
NON-INVERT BUFFER
Features
High speed: t
pd
= 3.8 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 2 µA (max) at Ta = 25°C
High noise immunity: V
NIH
= V
NIL
= 28% V
CC
(min)
5.5V tolerant input.
Wide operating voltage range: V
CC
(opr) = 2~5.5 V
SON5-P-0.35
(fSV)
Marking
(top view)
Type Name
・Pin
Assignment
Weight : 0.001 g (Typ.)
IN A
1
5 V
CC
H
F
GND
2
NC
3
4 OUT Y
1
2004-02-09
TC7SH34FS
Maximum Ratings
(Ta
=
25°C)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5~7.0
−0.5~7.0
−0.5~V
CC
+
0.5
−20
±20
±25
±50
50
−65~150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Logic Diagram
Truth Table
IN A
1
OUT Y
A
L
H
Y
L
H
Recommended Operating Conditions
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Rating
2.0~5.5
0~5.5
0~V
CC
−40~85
0~100 (V
CC
=
3.3
±
0.3 V)
0~20 (V
CC
=
5
±
0.5 V)
Unit
V
V
V
°C
ns/V
2
2004-02-09
TC7SH34FS
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test
Circuit
Ta
=
25°C
Test Condition
V
CC
(V)
2.0
V
IH
3.0~
5.5
2.0
Low-level input
voltage
V
IL
3.0~
5.5
2.0
I
OH
= −50 µA
High-level
output voltage
V
OH
V
IN
=
V
IH
I
OH
= −4
mA
I
OH
= −8
mA
3.0
4.5
3.0
4.5
2.0
I
OL
=
50
µA
Low-level output
voltage
V
OL
V
IN
=
V
IL
I
OL
=
4 mA
I
OL
=
8 mA
Input leakage
current
Quiescent
supply current
I
IN
I
CC
V
IN
=
5.5 V or GND
V
IN
=
V
CC
or GND
3.0
4.5
3.0
4.5
0~
5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.36
0.36
±0.1
2.0
Ta
= −40~85°C
Unit
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.48
3.80
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.44
0.44
±1.0
20.0
µA
µA
V
V
V
V
High-level input
voltage
3
2004-02-09
TC7SH34FS
AC Characteristics
(Input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
Test
Circuit
Test Condition
V
CC
(V)
3.3
±
0.3
Propagation delay
time
t
pLH
t
pHL
5.0
±
0.5
(Note)
C
L
(pF)
15
50
15
50
Input capacitance
Power dissipation
capacitance
C
IN
C
PD
Min
Ta
=
25°C
Typ.
5.0
7.5
3.8
5.3
4
13
Max
7.1
10.6
5.5
7.5
10
Ta
= −40~85°C
Min
1.0
1.0
1.0
1.0
Max
8.5
12.0
6.5
8.5
10
pF
pF
ns
Unit
Note: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
=
C
PD
½V
CC
½f
IN
+
I
CC
4
2004-02-09
TC7SH34FS
Package Dimensions
SON5-P-0.35
Unit:mm
Weight: 0.001 g (typ.)
5
2004-02-09
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