SD1456 (TCC3100)
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
.
.
.
.
.
.
.
.
.
170 - 230 MHz
28 VOLTS
CLASS AB PUSH PULL
DESIGNED FOR HIGH POWER LINEAR
OPERATION
HIGH SATURATED POWER CAPABILITY
GOLD METALLIZATION
DIFFUSED EMITTER BALLAST
RESISTORS
COMMON EMITTER CONFIGURATION
P
OUT
=
100 W MIN. WITH 11.0 dB GAIN
.400 x .425 8LFL (M168)
epoxy sealed
ORDER CODE
SD1456
BRANDING
TCC3100
PIN CONNECTION
DESCRIPTION
The SD1456 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band III television transmitters and trans-
posers.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Emitter
3. Base
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
65
33
3.5
16
150
+200
−
65 to +150
V
V
V
A
W
°
C
°
C
THERMAL DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance
1.2
°C/W
1/5
SD1456 (TCC3100)
ELECTRICAL SPECIFICATIONS
(T
case
=
25
°
C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BV
CBO
BV
CER
BV
CEO
BV
EBO
h
FE
I
C
=
50mA
I
C
=
50mA
I
C
=
50mA
I
E
=
5mA
V
CE
=
5V
I
E
=
0mA
R
BE
=
15Ω
I
B
=
0mA
I
C
=
0mA
I
C
=
500mA
65
60
33
3.5
20
—
—
—
—
—
—
—
—
—
150
V
V
V
V
—
DYNAMIC (Class AB)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
P
OUT
G
P
η
c
C
OB
f
=
225 MHz
P
OUT
=
100 W
P
OUT
=
100 W
f
=
1 MHz
V
CE
=
28 V
V
CE
=
28 V
V
CE
=
28 V
V
CB
=
28 V
I
C
=
2 x 100 mA
I
C
=
2 x 100 mA
I
C
=
2 x 100 mA
100
11
70
—
—
—
—
60
—
—
—
—
W
dB
%
pF
DYNAMIC (Class A)
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
P
OUT
*
G
P
*
IMD
3
*
Note:
f
=
225 MHz
P
IN
=
1.1 W
P
IN
=
1.1 W
V
CE
=
28 V
V
CE
=
28 V
V
CE
=
28 V
−
8,
−
7,
−
16dB
I
C
=
2 x 2.5 A
I
C
=
2 x 2.5 A
P
REF
=
28 W
28
14
—
32
15
−51
—
—
—
W
dB
dB
* Class A Performance Charact eristi cs Indi cate Capabilit y but are not Tested.
IMD3 - 3 T one Meaurement;
relative to P
REF
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
BROADBAND POWER GAIN vs
FREQUENCY
2/5
SD1456 (TCC3100)
TYPICAL PERFORMANCE (cont’d)
INTERMODULATION DISTORTION vs
POWER OUTPUT
COLLECTOR EFFICIENCY vs
FREQUENCY
IMPEDANCE DATA
FREQ.
170 MHz
200 MHz
230 MHz
P
OUT
=
100 W
V
CE
=
28 V
I
CQ
=
2 x 100 mA
Class AB
Z
IN
(
Ω
)
1.3 + j 0.6
1.0 + j 1.0
0.9 + j 1.8
Z
OUT
(
Ω
)
9.5
−
j 10.0
9.0
−
j 8.0
6.3
−
j 6.5
3/5
SD1456 (TCC3100)
IMPEDANCE DATA
FREQ.
170 MHz
200 MHz
230 MHz
V
CE
=
28 V
I
CQ
=
2 x 2.5 A
Class A
Z
IN
(
Ω
)
1.05 + j 0.65
0.9 + j 1.1
1.25 + j 1.8
Z
OUT
(
Ω
)
13.5
−
j 9.0
11.0
−
j 6.5
9.5
−
j 7.7
4/5
SD1456 (TCC3100)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0168
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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