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TESDM5V0A

200 W, UNIDIRECTIONAL, SILICON, TVS DIODE

器件类别:半导体    分立半导体   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

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TESDM5V0A
Taiwan Semiconductor
Small Signal Product
Ultra Low Capacitance ESD Protection Array
FEATURES
- Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- Meet IEC61000-4-4 (EFT) rating. 40A (5/50ns)
- Protects two directional I/O lines
- Working voltage: 5V
- Low leakage, low operating and clamping voltage
- Ultra low capacitance
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
MSOP-08
MECHANICAL DATA
- Case: MSOP-08 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- Molding Compound Flammability Rating: UL 94V-0
- High temperature soldering guaranteed : 260°C/10s
- Weight: 25 ± 0.5 mg
- Marking code: UC68M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak Pulse Power (tp=8/20μs waveform)
Peak Pulse Current (tp=8/20μs)
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
Junction and Storage Temperature Range
PARAMETER
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
I
R
= 1 mA
V
R
= 5 V
I
PP
= 1 A
I
PP
= 6 A
V
R
= 0 V , f = 1.0 MHz
SYMBOL
P
PP
I
PP
V
ESD
T
J
, T
STG
SYMBOL
V
RWM
V
(BR)
I
R
V
C
C
J
MIN
-
6.5
-
-
-
0.5
VALUE
200
6
± 15
±8
-55 to +150
MAX
5
-
0.5
9.8
15
UNIT
W
A
KV
o
C
UNIT
V
V
μA
V
pF
Document Number: DS_S1501023
Version: C15
TESDM5V0A
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig. 2 Pulse Waveform
110
100
90
80
Percent of I
PP
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
180
0
5
10
Time (us)
15
20
25
30
td = Ipp / 2
e
-1
Waveform parameters:
tr = 8
μs
, td = 20
μs
Fig. 1 Admissible Power Dissipation Curve
120
100
Power Rating (%)
80
60
40
20
0
Ambient Temperature (
o
C)
Fig. 3 Clamping Voltage VS. Peak Pulse Current
20
Normalized Capacitance (pF)
1.5
Fig. 4 Typical Junction Capacitance
15
ClampingVoltage (V)
f = 1.0 MHz
V
R
= 0 V
1.0
10
0.5
5
Waveform parameters:
tr = 8
μs
, td = 20
μs
0
0
1
2
3
4
5
6
7
Peak Pulse Current (A)
0.0
0
1
2
3
4
5
Reverse Voltage (V)
Document Number: DS_S1501023
Version: C15
TESDM5V0A
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
TESDM5V0A RMG
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
MSOP-08
DIM.
A
B
C
D
E
F
G
H
I
Unit (mm)
Min
2.90
2.90
0.22
4.75
-
0.13
0.40
0.75
Max
3.10
3.10
0.38
5.05
0.25
0.23
0.66
0.95
Unit (inch)
Min
0.114
0.114
0.009
0.187
-
0.005
0.016
0.030
Max
0.122
0.122
0.015
0.199
0.010
0.009
0.026
0.037
0.65 REF
0.0256 REF
SUGGEST PAD LAYOUT
DIM.
A
B
C
D
Unit (mm)
Typ.
4.80
0.41
0.65
1.02
Unit (inch)
Typ.
0.189
0.016
0.026
0.040
Note: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts
may vary depending on application.
Document Number: DS_S1501023
Version: C15
TESDM5V0A
Taiwan Semiconductor
Small Signal Product
APPLICATIONS INFORMATION
- Applications for Microprocess based equipment
- IEEE1394 Firewire Ports
- ATM Interfaces
- High Definition Multi-Media Interface(HDMI)
- Digital Video Interface (DVI)
- Video Graphs Cards
- Designed for protection of high-speed interfaces such as USB3.0
- Ultra low capacitance between the pairs while being rated to handle >±8kV, ESD contact discharges and >±15kV air discharge
- TESDM5V0A is ultra low capacitance ESD protction array designed to protect high speed data interfaces. This series has been
specifically designed to protect sensitive components which are connected to high-speed data and transmission lines form
overvoltage caused by ESD, CDE (Cable Discharge Events), and EFT(electrical fast transients)
Pin
1, 2, 3, 4, 5, 6
7
8
Definition
I/O Lines
Ground
Vcc
TYPICAL APPLICATION
Schematic Diagram for USB 3.0 Protection
Document Number: DS_S1501023
Version: C15
TESDM5V0A
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1501023
Version: C15
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参数对比
与TESDM5V0A相近的元器件有:TESDM5V0ARMG、TESDM5V0A_15。描述及对比如下:
型号 TESDM5V0A TESDM5V0ARMG TESDM5V0A_15
描述 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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