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TF70724L

Fast Switching Thyristor

器件类别:模拟混合信号IC    触发装置   

厂商名称:Dynex

厂商官网:http://www.dynexsemi.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Dynex
包装说明
DISK BUTTON, O-CXDB-X4
针数
4
Reach Compliance Code
unknow
配置
SINGLE
最大直流栅极触发电流
300 mA
JESD-30 代码
O-CXDB-X4
元件数量
1
端子数量
4
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
ROUND
封装形式
DISK BUTTON
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大均方根通态电流
600 A
断态重复峰值电压
2400 V
重复峰值反向电压
2400 V
表面贴装
YES
端子形式
UNSPECIFIED
端子位置
UNSPECIFIED
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发设备类型
SCR
文档预览
TF707..L
TF707..L
Fast Switching Thyristor
Replaces March 1998 version, DS4275-2.2
DS4275-3.0 January 2000
APPLICATIONS
s
High Power Inverters And Choppers
s
UPS
s
Railway Traction
s
Induction Heating
s
AC Motor Drives
s
Cycloconverters
KEY PARAMETERS
V
DRM
2500V
I
T(RMS)
600A
I
TSM
9000A
dV/dt 300V/
µ
s
dI/dt
500A/
µ
s
t
q
100
µ
s
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
High Voltage
VOLTAGE RATINGS
Type Number
Repetitive
Peak
Voltages
V
DRM
V
RRM
2500
2400
2200
2000
Conditions
TF707 25L
TF707 24L
TF707 22L
TF707 20L
V
RSM
= V
RRM
+ 100V
I
DRM
= I
RRM
= 60mA
at V
RRM
or V
DRM
& T
vj
Lower voltage grades available.
Outline type code: MU171.
See Package Details for further information.
CURRENT RATINGS
Symbol
I
T(AV)
I
T(RMS)
Parameter
Mean on-state current
RMS value
Conditions
Half sinewave, 50Hz, T
case
= 80
o
C
Half sinewave, 50Hz, T
case
= 80
o
C
Max.
380
600
Units
A
A
1/5
TF707..L
SURGE RATINGS
Symbol
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125˚C
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125˚C
Max.
7.0
245 x 10
3
Units
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 15.0kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-40
14.25
125
150
15.75
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.04
0.072
0.096
0.01
0.02
125
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
Measurement of Q
RA1
: Q
RA1
= I
RR
x t
RR
2
I
TM
Q
RA1
t
p
= 1ms
dI
R
/dt
I
RR
0.5x I
RR
2/5
TF707..L
DYNAMIC CHARACTERISTICS
Symbol
V
TM
I
RRM
/I
DRM
dV/dt
Parameter
Maximum on-state voltage
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At 1000A peak, T
case
= 125
o
C
At V
RRM
/V
DRM
, T
case
= 125
o
C
Linear to 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Gate source 20V, 20Ω
dI/dt
Rate of rise of on-state current
t
r
0.5µs, T
j
= 125˚C
V
T(TO)
r
T
t
gd
t
(ON)TOT
I
H
I
L
t
q
Q
RR
Threshold voltage
On-state slope resistance
Delay time
Total turn-on time
Holding current
Latching current
Turn-off time
Reverse recovery charge
At T
vj
= 125
o
C
At T
vj
= 125
o
C
T
j
= 25˚C, I
T
= 50A,
V
D
= 300V, I
G
= 1A,
dI/dt = 50A/µs, dI
G
/dt = 1A/µs
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
T
j
= 25
o
C, I
G
= 0.5A, V
D
= 12V
T
j
= 125˚C, I
T
= 250A, V
R
= 50V,
t
q
code: L
dV/dt = 20V/µs (Linear to 60% V
DRM
),
dI
R
/dt = 50A/µs, Gate open circuit
Non-repetitive
-
-
-
-
-
100*
300*
-
-
800
1.8
1.0
-*
-*
-
-
100
500
A/µs
V
mΩ
µs
µs
mA
mA
µs
µC
Repetitive 50Hz
Min.
-
-
-
-
Max.
2.8
80
300
500
Units
V
mA
V/µs
A/µs
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
Conditions
V
DRM
= 12V, R
L
= 6Ω, T
case
= 25
o
C
V
DRM
= 12V, R
L
= 6Ω, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C, R
L
= 1kΩ,
Anode positive with respect to cathode
Anode negative with respect to cathode
Typ.
-
-
-
-
-
-
-
-
-
Max.
3.0
300
0.25
30
0.25
5.0
10
50
3.0
Units
V
mA
V
V
V
V
A
W
W
3/5
TF707..L
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6x2.0 deep (in both electrodes)
Cathode tab
Cathode
Ø57.8 max
Ø34 nom
Gate
Ø34 nom
Ø54 max
Anode
Nominal weight: 310g
Clamping force: 15kN
±10%
Lead length: 250mm
Package outine type code: MU171
ASSOCIATED PUBLICATIONS
Title
Calculating the junction temperature or power semiconductors
Gate triggering and the use of gate characteristics
Recommendations for clamping power semiconductors
The effect of temperature on thyristor performance
Thyristor and diode measurement with a multi-meter
Turn-on performance of thyristors in parallel
Use of V , r on-state characteristic
TO
T
Application Note
Number
AN4506
AN4840
AN4839
AN4870
AN4853
AN4999
AN5001
4/5
26
±
1
Ø1.5
TF707..L
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc-
tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-
loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
CUSTOMER SERVICE CENTRES
France, Benelux, Italy and Spain
Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
North America
Tel: 011-800-5554-5554. Fax: 011-800-5444-5444
UK, Germany, Scandinavia & Rest Of World
Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
France, Benelux, Italy and Spain
Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany
Tel: 07351 827723
North America
Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World
Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4275-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information:
This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information:
The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information:
The product design is complete and final characterisation for volume production is well in hand.
No Annotation:
The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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参数对比
与TF70724L相近的元器件有:TF70722L、TF70720L、TF707。描述及对比如下:
型号 TF70724L TF70722L TF70720L TF707
描述 Fast Switching Thyristor Fast Switching Thyristor Fast Switching Thyristor Fast Switching Thyristor
是否无铅 不含铅 不含铅 不含铅 -
是否Rohs认证 符合 符合 符合 -
厂商名称 Dynex Dynex Dynex -
包装说明 DISK BUTTON, O-CXDB-X4 DISK BUTTON, O-CXDB-X4 DISK BUTTON, O-CXDB-X4 -
针数 4 4 4 -
Reach Compliance Code unknow unknow unknow -
配置 SINGLE SINGLE SINGLE -
最大直流栅极触发电流 300 mA 300 mA 300 mA -
JESD-30 代码 O-CXDB-X4 O-CXDB-X4 O-CXDB-X4 -
元件数量 1 1 1 -
端子数量 4 4 4 -
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED -
封装形状 ROUND ROUND ROUND -
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON -
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
认证状态 Not Qualified Not Qualified Not Qualified -
最大均方根通态电流 600 A 600 A 600 A -
断态重复峰值电压 2400 V 2200 V 2000 V -
重复峰值反向电压 2400 V 2200 V 2000 V -
表面贴装 YES YES YES -
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED -
端子位置 UNSPECIFIED UNSPECIFIED UNSPECIFIED -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
触发设备类型 SCR SCR SCR -
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