TFF1014HN
Integrated mixer oscillator PLL for satellite LNB
Rev. 2 — 24 November 2011
Product data sheet
1. General description
The TFF1014HN/N1 is an integrated downconverter for use in Low Noise Block (LNB)
convertors in a 10.7 GHz to 12.75 GHz K
u
band satellite receiver system.
2. Features and benefits
Low current consumption integrated pre-amplifier, mixer, buffer amplifier and
PLL synthesizer
Flat gain over frequency
Single 5 V supply pin
Low cost 25 MHz crystal
Crystal controlled LO frequency generation
Switched LO frequency (9.75 GHz and 10.6 GHz)
Low phase noise
Low spurious
Low external component count
Alignment-free concept
ESD protection on all pins
3. Applications
K
u
band LNB converters for digital satellite reception (DVB-S / DVB-S2)
4. Quick reference data
Table 1.
Quick reference data
V
CC
= 5 V; T
amb
= 25
C; f
LO
= 9.75 GHz or 10.6 GHz; f
xtal
= 25 MHz; Z
0
= 50
unless otherwise specified.
Symbol Parameter
V
CC
I
CC
NF
SSB
f
i(RF)
G
conv
supply voltage
supply current
single sideband noise figure
RF input frequency
conversion gain
RF input and IF output AC coupled
measured at low band f
IF
= 1450 MHz and
high band f
IF
= 1625 MHz
low band
high band
measured at low band f
IF
= 1450 MHz and
high band f
IF
= 1625 MHz
Conditions
Min
4.5
-
-
Typ Max
5
52
7
5.5
-
-
11.7
-
Unit
V
mA
dB
GHz
dB
10.7 -
11.7 -
-
36
12.75 GHz
NXP Semiconductors
TFF1014HN
Integrated mixer oscillator PLL for satellite LNB
Table 1.
Quick reference data
…continued
V
CC
= 5 V; T
amb
= 25
C; f
LO
= 9.75 GHz or 10.6 GHz; f
xtal
= 25 MHz; Z
0
= 50
unless otherwise specified.
Symbol Parameter
s
11
s
22
IP3
O
input reflection coefficient
output reflection coefficient
output third-order intercept point
Conditions
f
RF
= 10.7 GHz to 12.7 GHz
f
IF_OUT
= 950 MHz to 2150 MHz; Z
0
= 75
carrier power is
10
dBm (measured at output)
Min
-
-
-
Typ Max
10
-
10
-
14
-
Unit
dB
dB
dBm
5. Ordering information
Table 2.
Ordering information
Package
Name
TFF1014HN/N1
DHVQFN16
Description
plastic dual in-line compatible thermal enhanced very thin quad flat
package; no leads; 16 terminals; body 2.5
3.5
0.85
mm
Version
SOT763-1
Type number
6. Block diagram
RF_GND1
n.c.
RF
2
3
14
4
15
5
1
13
IF
IF_GND
GND2
RF_GND2
RF_GND3
V
CC
16
ON-CHIP
REGULATOR
internal
supplies
and bias
GND1
n.c.
VREG
LF
XO1
6
7
9
8
12
PFD
CHARGE
PUMP
DIVIDER
10
aaa-000007
XO2
11
HB
Fig 1.
TFF1014HN/N1 block diagram
TFF1014HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 24 November 2011
2 of 12
NXP Semiconductors
TFF1014HN
Integrated mixer oscillator PLL for satellite LNB
7. Functional diagram
V
CC
RF
XO1
XO2
IF
PLL
9.75 GHz/10.6 GHz
HB
aaa-000008
Fig 2.
Functional diagram
8. Pinning information
8.1 Pinning
RF_GND3
2
3
4
5
6
7
8
VREG
LF
9
1
terminal 1
index area
RF_GND1
n.c.
RF
RF_GND2
GND1
n.c.
16 V
CC
15 IF_GND
14 IF
13 GND2
12 XO1
11 XO2
10 HB
aaa-000009
Transparent top view
Fig 3.
Pin configuration
8.2 Pin description
Table 3.
Symbol
GND
Pin description
Pin Description
0
ground (exposed die pad)
RF ground. Connect this pin to the exposed die pad landing.
RF ground. Connect this pin to the exposed die pad landing and the RF input CPW line.
not connected. Connect to RF on PCB.
[1]
RF input.
RF ground. Connect this pin to the exposed die pad landing and the RF input CPW line.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
RF_GND3 1
RF_GND1 2
n.c.
RF
3
4
RF_GND2 5
TFF1014HN
Product data sheet
Rev. 2 — 24 November 2011
3 of 12
NXP Semiconductors
TFF1014HN
Integrated mixer oscillator PLL for satellite LNB
Table 3.
Symbol
GND1
n.c.
LF
VREG
HB
XO2
XO1
GND2
IF
IF_GND
V
CC
[1]
Pin description
…continued
Pin Description
6
7
8
9
10
11
12
13
14
15
16
Ground. Connect this pin to the exposed die pad landing and the RF input CPW line.
not connected. Use this pin to route the ground layer on top of the PCB to the exposed die pad.
Loop filter PLL. Connect loop filter between this pin and VREG (pin 9).
Regulated output voltage for VCO loop filter. Connect loop filter to this pin. Decouple against die pad via
pin 7.
High band / low band selection. Connect this pin to the tone detector or to a logic signal.
Crystal connection 2. Connect crystal between this pin and XO1 (pin 12).
Crystal connection 1. Connect crystal between this pin and XO2 (pin 11).
Ground. Connect this pin to the exposed die pad landing.
IF output
IF output ground. Connect this pin to the exposed die pad landing and the output transmission line ground.
Supply voltage
The distance between the outer edges of pin 2 and pin 3 is 740
m.
This gives an optimum transition from a 1.1 mm wide, Z
0
= 50
line
on RO4223 Printed-Circuit Board (PCB) material of 0.5 mm height to the TFF1014HN/N1.
9. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CC
V
I(HB)
T
stg
Parameter
supply voltage
input voltage on pin HB
storage temperature
Conditions
Min
0.5
0.5
40
Max
+6
+6
+125
Unit
V
V
C
10. Recommended operating conditions
Table 5.
Symbol
V
CC
V
I(HB)
T
amb
Z
0
f
i(RF)
f
LO
f
o(IF)
C
L(xtal)
ESR
f
xtal
[1]
Operating conditions
Parameter
supply voltage
input voltage on pin HB
ambient temperature
characteristic impedance
RF input frequency
LO frequency
IF output frequency
crystal load capacitance
equivalent series resistance
crystal frequency
low band
high band
low band
high band
low band
high band
[1]
Conditions
Min
4.5
0
40
-
10.7
11.7
-
-
0.95
1.1
-
-
-
Typ
5
-
+25
50
-
-
9.75
10.6
-
-
10
-
25
Max
5.5
5.5
+85
-
11.7
12.75
-
-
1.95
2.15
-
40
-
Unit
V
V
C
GHz
GHz
GHz
GHz
GHz
GHz
pF
MHz
For a 10.75 GHz LO frequency, select high band and use a crystal with frequency 10.75 GHz / 424 = 25.353774 MHz.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
TFF1014HN
Product data sheet
Rev. 2 — 24 November 2011
4 of 12
NXP Semiconductors
TFF1014HN
Integrated mixer oscillator PLL for satellite LNB
11. Thermal characteristics
Table 6.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
Typ
35
Unit
K/W
12. Characteristics
Table 7.
Characteristics
V
CC
= 5 V; T
amb
= 25
C; f
LO
= 9.75 GHz or 10.6 GHz; f
xtal
= 25 MHz; Z
0
= 50
unless otherwise specified.
Symbol
I
CC
n(itg)RMS
Parameter
supply current
RMS integrated phase noise density
Conditions
RF input and IF output AC coupled
integration offset frequency =
10 kHz to 13 MHz;
loop bandwidth = crossover bandwidth
measured at low band f
IF
= 1450 MHz
and high band f
IF
= 1625 MHz
measured at low band f
IF
= 1450 MHz
and high band f
IF
= 1625 MHz
over whole IF band
in every 36 MHz band
s
11
s
22
IP3
O
P
L(1dB)
V
IL(HB)
V
IH(HB)
R
pd(HB)
input reflection coefficient
output reflection coefficient
output third-order intercept point
output power at 1 dB gain
compression
low level input voltage on pin HB
high level input voltage on pin HB
pull down resistance on pin HB
f
RF
= 10.7 GHz to 12.7 GHz
f
IF_OUT
= 950 MHz to 2150 MHz;
Z
0
= 75
carrier power is
10
dBm (measured at
the output)
Min Typ Max Unit
-
-
52
1.5
-
-
mA
deg
NF
SSB
G
conv
G
conv
single sideband noise figure
conversion gain
conversion gain variation
-
-
-
-
-
-
-
-
-
2.0
80
7
36
2
0.5
-
-
-
-
dB
dB
dB
dB
dB
dB
dBm
dBm
V
V
k
10
-
10
-
14
4
-
-
-
-
0.8
-
110 140
TFF1014HN
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 24 November 2011
5 of 12
