DIODE 0.2 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode
厂商名称:Toshiba(东芝)
厂商官网:http://toshiba-semicon-storage.com/
下载文档型号 | TFR3NTPA2 | TFR3TTPA3 | TFR3NTPB2 | TFR3NTPA3 | TFR3NTPA1 |
---|---|---|---|---|---|
描述 | DIODE 0.2 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.2 A, 1500 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.2 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.2 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode | DIODE 0.2 A, 1000 V, SILICON, SIGNAL DIODE, Signal Diode |
厂商名称 | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) |
包装说明 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
二极管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
二极管类型 | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
JESD-30 代码 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 | 2 |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
最大输出电流 | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大重复峰值反向电压 | 1000 V | 1500 V | 1000 V | 1000 V | 1000 V |
最大反向恢复时间 | 1.5 µs | 1.5 µs | 1.5 µs | 1.5 µs | 1.5 µs |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |