Advance Product Information
June 14, 2001
Ka Band Low Noise Amplifier
TGA1319B-EPU
Key Features and Performance
•
•
•
•
•
•
0.15um pHEMT Technology
21-27 GHz Frequency Range
1.75 dB Nominal Noise Figure
19 dB Nominal Gain
8dBm Pout
3V, 45 mA Self -biased
Point-to-Point Radio
Point-to-Multipoint Communications
5
0
-5
S11
-10
(dB)
Chip Dimensions 2.237 mm x 1.144 mm
Preliminary Data, 6-10 Fixtured samples @ 25C
two 1-mil ball bonds at RF interconnects
6.0
5.0
4.0
Primary Applications
•
•
NF
(dB)
3.0
2.0
1.0
0.0
15.0
-15
-20
-25
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
Frequency (GHz)
Frequency (GHz)
NF @ 25C
25
0
-5
S11 @ 25C
20
-10
-15
15
S21
(dB)
10
S22
(dB)
-20
-25
-30
5
-35
-40
0
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
-45
1
3
6
8
11
13
16
18
21
23
26
28
31
33
36
38
Frequency (GHz)
Fre que ncy (GHz)
Gain @ 25C
S22 @ 25C
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
June 14, 2001
TGA1319B-EPU
MAXIMUM RATINGS
SYMBOL
V
+
I
+
I
-
P
IN
P
D
T
CH
T
M
T
STG
1/
2/
3/
PARAMETER 4/
POSITIVE SUPPLY VOLTAGE
POSITIVE SUPPLY CURRENT
NEGATIVE GATE CURRENT
INPUT CONTINUOUS WAVE POWER
POWER DISSIPATION
OPERATING CHANNEL TEMPERATURE
MOUNTING TEMPERATURE
(30 SECONDS)
STORAGE TEMPERATURE
VALUE
5V
60 mA
5.28 mA
15 dBm
.3 W
150
0
C
320
0
C
-65 to 150
0
C
2/ 3/
1/
NOTES
Total current for all stages.
These ratings apply to each individual FET.
Junction operating temperature will directly affect the device median time to failure (T
M
). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
These ratings represent the maximum operable values for the device.
4/
ON-WAFER RF PROBE CHARACTERISTICS
(T
A
= 25
°C ±
5°C)
V
d
= 3 V
Symbol Parameter
Gain
NF
PWR
Small Signal
Gain
Noise Figure
Output Power
@ P1dB
Test Condition
F = 21 – 26 GHz
F = 27 GHz
F = 21 – 26.5 GHz
F = 21 GHz
F = 22 GHz
F = 23 – 24 GHz
F = 25 – 26 GHz
F = 27 GHz
Limit
Min Typ Max
18.5
---
17
---
---
2
5
---
6
---
7
---
8
---
10
---
Units
dB
dB
dBm
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
Advance Product Information
June 14, 2001
TGA1319B-EPU
Vd=3V
100
pF
100
pF
100
pF
RF out
RF in
Gnd
TGA1319B - Recommended Assembly Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
Advance Product Information
June 14, 2001
TGA1319B-EPU
Mechanical Drawing
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4
Advance Product Information
June 14, 2001
TGA1319B-EPU
Assembly Process Notes
Reflow process assembly notes:
•=
•=
•=
•=
•=
AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
alloy station or conveyor furnace with reducing atmosphere
no fluxes should be utilized
coefficient of thermal expansion matching is critical for long-term reliability
storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•=
•=
•=
•=
•=
•=
•=
vacuum pencils and/or vacuum collets preferred method of pick up
avoidance of air bridges during placement
force impact critical during auto placement
organic attachment can be used in low-power applications
curing should be done in a convection oven; proper exhaust is a safety concern
microwave or radiant curing should not be used because of differential heating
coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•=
•=
•=
•=
•=
thermosonic ball bonding is the preferred interconnect technique
force, time, and ultrasonics are critical parameters
aluminum wire should not be used
discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
maximum stage temperature: 200ΓC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
