TGA4902-SM
Ka Band Packaged MPA
Key Features
•
•
•
•
•
Typical Frequency Range: 25 - 35 GHz
25 dBm Nominal P1dB
18 dB Nominal Gain
Bias 6 V, 220 mA
Package Dimensions:
4.0 x 4.0 x 0.9 mm
Primary Applications
•
•
•
Ka-Band VSAT
Point-to-Point Radio
Point-to-Multipoint Communications
Product Description
The TriQuint TGA4902-SM is a Ka-
Band packaged medium Power
Amplifier. The TGA4902-SM operates
from 25-35 GHz and is designed using
TriQuint’s power pHEMT production
process.
The TGA4902-SM typically provides 25
dBm of output power at 1 dB gain
compression, with small signal gain of
18 dB.
The TGA4902-SM is ideally suited for
VSAT ground terminal market, Point-to-
Point Radio, Point-to-Multipoint
Communications.
Evaluation Boards are available.
Lead-free and RoHS compliant.
25
20
15
10
5
0
-5
-10
-15
-20
-25
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 220 mA, Tuned
Gain
S-Parameter (dB)
ORL
IRL
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
27
25
P1dB (dBm)
23
21
19
17
15
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
Datasheet subject to change without notice
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
April 2012 © Rev C
1
TGA4902-SM
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
Vd
Vg
Id
⏐Ig⏐
P
IN
P
D
T
CH
T
STG
PARAMETER
Drain Voltage
Gate Voltage Range
Drain Current
Gate Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
VALUE
8V
-5 TO 0 V
296 mA
8.8 mA
20 dBm
1.89 W
200 °C
260 °C
-65 to 150 °C
NOTES
2/
2/ 3/
3/
2/ 4/
5/ 6/
1/
2/
3/
4/
5/
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
Total current for the entire MMIC.
When operated at this bias condition with a base plate temperature of 85 °C, the median life is
2.3E4 hours
Junction operating temperature will directly affect the device median time to failure (Tm). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
These ratings apply to each individual FET.
6/
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
April 2012 © Rev C
2
TGA4902-SM
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25
0
C, Nominal)
PARAMETER
Frequency Range
Drain Operating
Quiescent Current
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power @ 1 dB Compression Gain
Temperature Coefficient
TYPICAL
25 - 35
6
220
18
15
10
25
-0.017
UNITS
GHz
V
mA
dB
dB
dB
dBm
dB/ C
0
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
April 2012 © Rev C
3
TGA4902-SM
TABLE III
THERMAL INFORMATION
PARAMETER
θ
JC
Thermal Resistance
(channel case)
TEST
CONDITIONS
Vd = 6 V
I
D
= 220 mA
Pdiss = 1.32 W
T
CH
(°C)
150
θ
JC
(°C/W)
60.7
Tm
(HRS)
1.0E+6
Note: Worst case condition with no RF applied, 100% of DC power is dissipated, Case
Temperature @ 70 °
C
Median Lifetime (Tm) vs. Channel Temperature
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
April 2012 © Rev C
4
TGA4902-SM
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id =220 mA, Tuned
26
24
22
20
18
16
14
12
10
8
6
4
2
0
20
22
24
26
28
30
32
34
36
38
40
Frequency (GHz)
Gain (dB)
27
26
25
24
P1dB (dBm)
23
22
21
20
19
18
17
16
15
25
26
27
28
29
30
31
32
33
34
35
Frequency (GHz)
5
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
April 2012 © Rev C
测试/测量
