TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
T
RANS
Zorb
®
Transient Voltage Suppressors
FEATURES
• Plastic MELF package
• Ideal for automated placement
• Glass passivated pallet chip junction
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
DO-213AB (GL41)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 250 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
WM
P
PPM
P
D
I
FSM
T
J
max.
Polarity
Package
6.45 V to 210 V
5.8 V to 171 V
400 W, 200 W
1.0 W
40 A
150 °C
Uni-directional
DO-213AB (GL41)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-213AB (GL41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity:
Blue band denotes the cathode which is positive
with respect to the anode under normal TVS operation
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3)
Peak forward surge current, 8.3 ms half sine-wave uni-directional only
(2)
Maximum instantaneous forward voltage at 25 A for uni-directional only
Operating junction and storage temperature range
SYMBOL
P
PPM
P
D
I
PPM
I
FSM
V
F
T
J
, T
STG
VALUE
400
1.0
See next table
40
3.5
-55 to +150
UNIT
W
W
A
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2. Rating is 200 W above 91 V
A
(2)
Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
Revision: 03-Jun-15
Document Number: 88403
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
38.1
35.4
33.1
29.9
27.6
25.6
24.0
22.0
18.9
17.8
15.9
14.4
13.1
12.0
10.7
9.7
8.8
8.0
7.4
6.7
6.2
5.7
5.2
4.7
4.3
3.9
3.5
3.2
1.46
1.32
1.21
1.12
0.97
0.91
0.85
0.81
0.73
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAGE
V
BR (1)
(V)
MIN.
TGL41-6.8A
TGL41-7.5A
TGL41-8.2A
TGL41-9.1A
TGL41-10A
TGL41-11A
TGL41-12A
TGL41-13A
TGL41-15A
TGL41-16A
TGL41-18A
TGL41-20A
TGL41-22A
TGL41-24A
TGL41-27A
TGL41-30A
TGL41-33A
TGL41-36A
TGL41-39A
TGL41-43A
TGL41-47A
TGL41-51A
TGL41-56A
TGL41-62A
TGL41-68A
TGL41-75A
TGL41-82A
TGL41-91A
TGL41-100A
TGL41-110A
TGL41-120A
TGL41-130A
TGL41-150A
TGL41-160A
TGL41-170A
TGL41-180A
TGL41-200A
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
105
114
124
143
152
162
171
190
MAX.
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
TEST
CURRENT
I
T
(mA)
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.80
6.40
7.02
7.78
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
70.1
77.8
85.5
94.0
102
111
128
136
145
154
171
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
1000
500
200
50.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103
113
125
137
152
165
179
207
219
234
246
274
MAXIMUM
TEMPERATURE
COEFFICENT
OF V
BR
(%/°C)
0.060
0.064
0.068
0.071
0.076
0.078
0.081
0.084
0.087
0.089
0.091
0.093
0.095
0.097
0.099
0.100
0.101
0.102
0.103
0.104
0.104
0.105
0.106
0.107
0.107
0.108
0.108
0.109
0.109
0.110
0.110
0.110
0.111
0.111
0.111
0.111
0.111
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(2)
All terms and symbols are consistent with ANSI/IEEE C62.35
ORDERING INFORMATION
(Example)
PREFERRED PIN
TGL41-6.8A-E3/96
TGL41-6.8A-E3/97
UNIT WEIGHT (g)
0.134
0.134
PREFERRED PACKAGE CODE
96
97
BASE QUANTITY
1500
5000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 03-Jun-15
Document Number: 88403
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
10 000
C
J
- Junction Capacitance (pF)
P
PPM
- Peak Pulse Power (kW)
Non-Repetitive
Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
10
TGL41-6.8
1
TGL91A
1000
Measured at
Zero Bias
100
Measured at Stand-Off
Voltage V
WM
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
TGL41-100
0.1
0.1 µs
1.0 µs
TGL200A
10 µs
100 µs
1.0 ms
10 ms
Uni-Directional
100
1000
10
1
10
t
d
- Pulse Width
Fig. 1 - Peak Pulse Power Rating Curve
V
BR
- Breakdown Voltage (V)
Fig. 4 -
Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentace (%)
100
1.00
75
50
P
D
- Power Dissipation (W)
0.75
0.50
25
0.25
0
0
25
50
75
100
125
150
175
200
0
0
25
50
75
100
125
150
175
200
T
J
- Initial Temerature (°C)
Fig. 2 -
Pulse Power or Current vs. Initial Junction Temperature
T
L
- Lead Temerature (°C)
Fig. 5 -
Power Derating Curve
150
50
t
r
= 10 µs
Peak Value
I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
Peak Forward Surge Current (A)
100
Half Value - I
PP
I
PPM
2
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
40
30
20
50
10/1000 µs Waveform
as defined
by
R.E.A.
10
t
d
0
0
1.0
2.0
3.0
4.0
0
1
10
100
t - Time (ms)
Fig. 3 - Pulse Waveform
Number
of Cycles at 60 Hz
Fig. 6 -
Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Only
Revision: 03-Jun-15
Document Number: 88403
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TGL41-6.8A thru TGL41-200A
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-213AB (GL41)
Mounting Pad Layout
Solderable Ends
1
st
Band
D2 = D1 + 0
- 0.008 (0.20)
0.138 (3.5)
MAX.
Vishay General Semiconductor
D2
D1 =
0.105
0.095
(2.67)
(2.41)
0.118 (3.0)
MIN.
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
0.022 (0.56)
0.018 (0.46)
0.049 (1.25)
MIN.
0.238 (6.0)
REF.
1
st
Band Denotes Type and Positive End (Cathode)
Revision: 03-Jun-15
Document Number: 88403
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000