TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-213AB (GL41)
SOLDERABLE ENDS
1st BAND
0
D2 = D1 + 0.008 (0.20)
-
Breakdown Voltage
6.8 to 200V
Peak Pulse Power
400W
Mounting Pad Layout
D2
D1=
0.105
0.095
(2.67)
(2.41)
0.157 (4.00)
MAX
0.049 (1.25) MIN
0.118 (3.00) MIN
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
1st band denotes type and positive end (cathode)
0.022 (0.56)
0.018 (0.46)
Dimensions in inches
and (millimeters)
0.256 (6.50)
REF
Mechanical Data
Case:
JEDEC DO-213AB molded plastic body over
passivated junction
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity:
Blue bands denotes the cathode which is
positive with respect to the anode under normal TVS
operation
Mounting Position:
Any
Weight:
0.0046 oz., 0.166 g
Packaging codes/options:
26/5K per 13" Reel (12mm tape), 60K/box
46/1.5K per 7" Reel (12mm tape), 30K/box
Features
• Plastic package has Underwriters Laboratory
Flammability Classificaion 94V-0
• For surface mounted applications
• Glass passivated junction
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• 400W peak pulse capability with a 10/1000µs waveform,
repetition rate (duty cycle): 0.01% (200W above 91V)
• For devices with V
(BR)
≥10V,
I
D
are typically less
than 1.0µA
• High temperature soldering guaranteed: 250°C/10
seconds at terminals
• Available in unidirectional only
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with a
10/1000µs waveform
(1)
(Fig. 1)
Steady state power dissipation at T
L
= 75°C
(2)
Peak pulse current with a 10/1000µs waveform
(1)
(Fig. 3)
Peak forward surge current, 8.3 ms single half sine-wave
unidirectional only
(3)
Maximum instantaneous forward voltage at 25A for
unidirectional only
Operating junction and storage temperature range
Symbol
P
PPM
P
M(AV)
I
PPM
I
FSM
V
F
T
J
, T
STG
Value
Minimum 400
1.0
See Next Table
40
3.5
–55 to +150
Unit
W
W
A
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2. Rating is 200W above 91V.
(2) Mounted on copper pads to each terminal of 0.31 in
2
(8.0 mm
2
) per Fig. 5
(3) Measured at 8.3ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
Document Number 88403
03-May-02
www.vishay.com
1
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Breakdown Voltage
V
BR
(V)
(1)
Device Type
Min
Max
Test Current
at I
T
(mA)
A
= 25°C unless otherwise noted)
Stand-off Voltage
V
WM
(V)
Maximum Reverse
Leakage at
V
WM
I
D
(µA)
Maximum
Peak Pulse
Current I
PPM
(A)
(2)
Maximum
Maximum
Clamping Voltage Temperature
at I
PPM
Coefficient
V
C
(V)
of V
BR
(% /
°C)
TGL41-6.8
TGL41-6.8A
TGL41-7.5
TGL41-7.5A
TGL41-8.2
TGL41-8.2A
TGL41-9.1
TGL41-9.1A
TGL41 -10
TGL41 -10A
TGL41 -11
TGL41 -11A
TGL41-12
TGL41-12A
TGL41-13
TGL41-13A
TGL41-15
TGL41-15A
TGL41-16
TGL41-16A
TGL41-18
TGL41-18A
TGL41-20
TGL41-20A
TGL41-22
TGL41-22A
TGL41-24
TGL41-24A
TGL41-27
TGL41-27A
TGL41-30
TGL41-30A
TGL41-33
TGL41-33A
TGL41-36
TGL41-36A
TGL41-39
TGL41-39A
TGL41-43
TGL41-43A
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
1000
1000
500
500
200
200
50.0
50.0
10.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
37.0
38.1
34.2
35.4
32.0
33.1
29.0
29.9
26.7
27.6
24.7
25.6
23.1
24.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.060
0.060
0.064
0.064
0.068
0.068
0.071
0.071
0.076
0.076
0.078
0.078
0.081
0.081
0.084
0.084
0.087
0.087
0.089
0.089
0.091
0.091
0.093
0.093
0.095
0.095
0.097
0.097
0.099
0.099
0.100
0.100
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
www.vishay.com
2
Document Number 88403
03-May-02
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Breakdown Voltage
V
BR
(V)
(1)
Device Type
Min
Max
Test Current
at I
T
(mA)
A
= 25°C unless otherwise noted)
Stand-off Voltage
V
WM
(V)
Maximum Reverse
Leakage at
V
WM
I
D
(µA)
Maximum
Peak Pulse
Current I
PPM
(A)
(2)
Maximum
Maximum
Clamping Voltage Temperature
at I
PPM
Coefficient
V
C
(V)
of V
BR
(% /
°C)
TGL41-47
TGL41-47A
TGL41-51
TGL41-51A
TGL41-56
TGL41-56A
TGL41-62
TGL41-62A
TGL41-68
TGL41-68A
TGL41-75
TGL41-75A
TGL41-82
TGL41-82A
TGL41-91
TGL41-91A
TGL41-100
TGL41-100A
TGL41-110
TGL41-110A
TGL41-120
TGL41-120A
TGL41-130
TGL41-130A
TGL41-150
TGL41-150A
TGL41-160
TGL41-160A
TGL41-170
TGL41-170A
TGL41-180
TGL41-180A
TGL41-200
TGL41-200A
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105.0
108.0
114.0
117.0
124.0
135.0
143.0
144.0
152.0
153.0
162.0
162.0
171.0
180.0
190.0
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100.0
95.50
110.0
105.0
121.0
116.0
132.0
126.0
143.0
137.0
165.0
158.0
176.0
168.0
187.0
179.0
198.0
189.0
220.0
210.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.9
6.2
5.4
5.7
5.0
5.2
4.5
4.7
4.1
4.3
3.7
3.9
3.4
3.5
3.1
3.2
1.39
1.46
1.27
1.32
1.16
1.21
1.07
1.12
0.93
0.97
0.87
0.91
0.82
0.85
0.78
0.81
0.70
0.73
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.109
0.109
0.109
0.109
0.110
0.110
0.110
0.110
0.110
0.110
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
0.111
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs square wave pulse or equivalent
(2) Surge current waveform per Figure 3 and derate per Fig.2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88403
03-May-02
www.vishay.com
3
TGL41-6.8 thru TGL41-200A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
100
Peak Pulse Power (P
PPM
) or Current
(I
PPM
) derating in percentage (%)
Fig. 2 - Pulse Derating Curve
100
P
PPM
, Peak Pulse Power (kW)
Non-Repetitive
Pulse Waveform
shown in Fig. 3
T
A
= 25°C
10
75
TGL41-6.8 TGL91A
50
1.0
TGL41-100 TGL200A
0.1
0.1
µ
s
25
1.0
µ
s
10
µ
s
100
µ
s
1.0ms
10ms
0
0
25
50
75
100
125
150
td, Pulse Width, sec.
T
A
, Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
Fig. 4 - Typical Junction Capacitance
10,000
I
PPM
— Peak Pulse Current, % I
RSM
CJ, Junction Capacitance (pF)
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25
°
C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Measured at Zero Bias
1,000
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
Measured at Stand-off
Voltage, V
WM
100
td
0
0
1.0
2.0
3.0
4.0
T
J
= 25°C
f = 1.0 MHz
Vsq = 50MVpp
10
1.0
10
Unidirectional
100
200
t — Time (ms)
V
(BR)
, Breakdown Voltage (V)
1.00
I
FSM
, Peak Forward Surge Current (A)
Fig. 5 - Steady State Power
Derating Curve
PM
(AV)
, Steady State Power
Dissipation (W)
60 Hz Resistive or
Inductive Load
0.75
Fig. 6 - Maximum Non-Repetitive Peak Forward
Surge Current Unidirectional only
50
40
8.3ms single half sine-wave
(JEDEC method)
T
J
= T
J
max.
30
0.50
20
0.25
0.31 x 0.31 x 0.08" Copper pads
(8 x 8 x 2mm)
0
0
25
50
75
100
125
150
175
200
10
0
1
10
100
T
L
, Lead Temperature (°C)
Number of Cycles at 60 Hz
www.vishay.com
4
Document Number 88403
03-May-02
嵌入式系统
