型号
- 型号
- 关键词
NAND Flash 4 Gbit CMOS NAND EEPROM
器件类别：存储
厂商名称：Toshiba(东芝)
厂商官网：http://toshiba-semicon-storage.com/
器件标准：
| 型号 | TH58BVG2S3HTAI0 | TH58BYG2S3HBAI6 | TC58NYG2S3EBAI5 | TH58BVG2S3HBAI4 | TH58BVG2S3HTA00 |
|---|---|---|---|---|---|
| 描述 | NAND Flash 4 Gbit CMOS NAND EEPROM | NAND Flash 1.8V, 4 Gbit CMOS NAND EEPROM | NAND Flash 8Gb 1.8V SLC NAND Flash Serial EEPROM | NAND Flash 4Gb SLC BENAND EEPROM | NAND Flash 4 Gbit CMOS NAND EEPROM |
| Product Attribute | Attribute Value | Attribute Value | Attribute Value | Attribute Value | Attribute Value |
| 制造商 Manufacturer |
Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) |
| 产品种类 Product Category |
NAND Flash | NAND Flash | NAND Flash | NAND Flash | NAND Flash |
| RoHS | Details | Details | Details | Details | Details |
| 安装风格 Mounting Style |
SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| 封装 / 箱体 Package / Case |
TSOP-48 | BGA-63 | TFBGA-63 | TFBGA-63 | TSOP-48 |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| 接口类型 Interface Type |
Parallel | Parallel | Parallel | Parallel | Parallel |
| Organization | 512 M x 8 | 512 M x 8 | 512 M x 8 | 512 M x 8 | 512 M x 8 |
| 电源电压-最小 Supply Voltage - Min |
2.7 V | 1.7 V | 1.7 V | 2.7 V | 2.7 V |
| 电源电压-最大 Supply Voltage - Max |
3.6 V | 1.95 V | 1.95 V | 3.6 V | 3.6 V |
| 最小工作温度 Minimum Operating Temperature |
- 40 C | - 40 C | - 40 C | - 40 C | 0 C |
| 最大工作温度 Maximum Operating Temperature |
+ 85 C | + 85 C | + 85 C | + 85 C | + 70 C |
| 系列 Packaging |
Tray | Tray | Tray | Tray | Tray |
| Memory Type | NAND | NAND | NAND | NAND | NAND |
| 产品 Product |
NAND Flash | NAND Flash | NAND Flash | NAND Flash | NAND Flash |
| 工厂包装数量 Factory Pack Quantity |
96 | 338 | 180 | 210 | 96 |
